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A Coating Equipment Combined with Pulse Laser Deposition and Molecular Beam Epitaxy and Its Application

A technology of pulsed laser deposition and molecular beam epitaxy, which is applied in photodetectors, laser diodes, light emitting diodes, thin film epitaxy and thin film devices, and solar cells, can solve the problems of limited promotion and application range, and reduce production costs. The effect of suppressing the interface reaction and saving the cost of equipment procurement

Active Publication Date: 2016-10-19
广州市艾佛光通科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This shortcoming of PLD seriously limits its promotion and application range.

Method used

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  • A Coating Equipment Combined with Pulse Laser Deposition and Molecular Beam Epitaxy and Its Application
  • A Coating Equipment Combined with Pulse Laser Deposition and Molecular Beam Epitaxy and Its Application
  • A Coating Equipment Combined with Pulse Laser Deposition and Molecular Beam Epitaxy and Its Application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] Please refer to figure 1 , a pulsed laser deposition combined with molecular beam epitaxy coating equipment, which includes a growth chamber cavity 1;

[0052] A base 2 is provided at the center below the growth chamber cavity 1, and 1-6 evenly arranged turntables 3 for placing targets are arranged on the base 2, and the base 2 and the turntable 3 are respectively composed of The driving mechanism drives the rotation, so that the target can not only revolve with the base 2 but also rotate with the turntable 3;

[0053] Several evenly distributed MBE evaporation sources 4 are also provided on the lower side wall of the growth chamber cavity 1;

[0054] Valves connected to the mechanical pump 5 and the molecular pump 6 are also provided on the lower side wall or the bottom wall of the growth chamber cavity 1, so that the mechanical pump 5 and the molecular pump 6 vacuumize the growth chamber;

[0055] An auxiliary gas pipeline 7 and RF accessories are provided at the mi...

Embodiment 2

[0061] The method for preparing non-polar GaN-based LED epitaxial wafers by using pulsed laser deposition and molecular beam epitaxy combined with coating equipment is carried out according to the following steps:

[0062] 1) Selection of substrate and its crystal orientation: use LiGaO 2 The substrate, with the (100) plane offset from the (110) direction by 0.2° as the epitaxial plane, the crystal epitaxial orientation relationship is: the (1-100) plane of GaN is parallel to LiGaO 2 (100) faces.

[0063] 2) polishing, cleaning and annealing the surface of the substrate;

[0064] The polishing process is specifically: firstly LiGaO 2 The surface of the substrate is polished with diamond slurry, and the surface of the substrate is observed with an optical microscope until there are no scratches, and then polished by chemical mechanical polishing;

[0065] The cleaning treatment is specifically: the LiGaO 2 The substrate was ultrasonically cleaned in deionized water for 3 mi...

Embodiment 3

[0078] The GaN thin film grown on the lithium gallate substrate was prepared by using the pulsed laser deposition and molecular beam epitaxy coating equipment described in Example 1, and the GaN thin film was used to prepare LED: after growing on the lithium gallate substrate Si-doped n-type silicon-doped GaN and In are epitaxially grown sequentially on the GaN film on x Ga1-xN multi-quantum well layer, Mg-doped p-type magnesium-doped GaN layer, and finally electron beam evaporation to form ohmic contact. The GaN-based LED device prepared on the lithium gallate substrate has a thickness of n-type GaN of about 4.5 μm and a carrier concentration of 1.7×10 19 cm -3 ;In x Ga 1-x The thickness of the N / GaN multi-quantum well layer is about 150nm, and the number of periods is 10, where In x Ga 1-x The N well layer is 3nm, the GaN barrier layer is 12nm, the thickness of the p-type magnesium-doped GaN layer is about 300nm, and the carrier concentration is 4.9×10 17 cm -3 . Und...

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Abstract

The invention discloses a pulsed laser deposition and molecular beam epitaxy combined coating device and application thereof. A target material tray capable of conducting revolution and rotation is added to the middle area of an MBE evaporation source, and a target material required by PLD coating is placed; a high-performance solid laser device is added, and meanwhile a quartz window is added to an appropriate position of a cavity of an MBE growth chamber and high-energy lasers with the wave length of 150 nm to 355 nm are introduced for evaporation of the target material. The coating device is a PLD and MBE combined body and has the functions and advantages of a PLD and an MBE at the same time; the coating device can be used as the PLD or the MBE individually and can also be used as the combination of the PLD and the MBE; the coating device can be used for epitaxial growth of a thin film and manufacturing of thin film devices, especially for solar cells, LEDs and LDs of a quantum well structure. Compared with the prior art, the coating device has the advantages of being simple in growth process, low in manufacturing cost and wide in application range.

Description

technical field [0001] The present invention relates to a pulsed laser deposition (PLD) combined with molecular beam epitaxy (MBE) coating equipment and its application, specifically for the manufacture of thin film epitaxy and thin film devices, especially solar cells, light emitting diodes (LEDs), laser diodes ( LD), photodetector. Background technique [0002] With the rapid expansion of population and the development and progress of science and technology, the human demand for energy continues to increase. However, many energy sources such as petroleum and coal are non-renewable resources, and energy shortage has become a huge obstacle to human development and progress. How to make more effective use of existing energy and achieve sustainable development is a major issue facing all mankind. Especially at present, in the context of the increasingly severe global warming problem, the world is still facing important issues of energy conservation and reduction of greenhous...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/20H01L21/203H01L33/00
CPCC23C14/28C30B25/02H01L33/0066H01L33/0075
Inventor 李国强
Owner 广州市艾佛光通科技有限公司
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