Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Fabrication method of gas sensor based on Pt-doped SNO2 ordered mesoporous film

A gas sensor and thin film technology, applied in the direction of material resistance, etc., can solve the problems of unfavorable large-scale production of devices, affecting the resistance of sensitive layers, heating response to gas, and the sensing layer of gas sensors.

Active Publication Date: 2017-11-03
YUNNAN UNIV
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the thin film prepared by pulling method has SnO2 thin film on both sides of the substrate. As a sensor element, it greatly affects the resistance, heating, and response to gas of the sensitive layer, so it cannot be used to make gas sensors. Sensitive layer, and the disadvantage of this method is that a special polymer KLE22 needs to be applied, because of this special polymer, the production cost is increased and the application range is limited
At the same time, there are also researchers who synthesize, disperse, and transfer mesoporous SnO2 materials to gas sensor substrates, and finally form gas sensor elements through heat treatment. Such a secondary transfer process is difficult to make mesoporous The sensitive performance of the structural gas-sensing material is fully utilized, and the reliability of the electrical contact between the gas-sensing film and the electrode formed by the secondary transfer is difficult to guarantee, thus affecting the performance stability and reliability of the gas-sensing element
In addition, the complex process is not conducive to the large-scale production of devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fabrication method of gas sensor based on Pt-doped SNO2 ordered mesoporous film
  • Fabrication method of gas sensor based on Pt-doped SNO2 ordered mesoporous film
  • Fabrication method of gas sensor based on Pt-doped SNO2 ordered mesoporous film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] (1) SnO 2 Preparation of sol: the precursor is polyisobutylene- b -Polyethylene oxide block copolymer, anhydrous tin tetrachloride, absolute ethanol and tetrahydrofuran, add the block copolymer to the absolute ethanol and tetrahydrofuran solution to prepare a sol at a mass ratio of 1:24:25, and ultrasonically vibrate 30 min, obtain transparent solution A, by mass ratio 1:6 with anhydrous SnCl 4 Dissolve in absolute ethanol to obtain solution B, slowly add solution B to A while stirring, and stir for 30 min to obtain SnO 2 Sol;

[0021] (2) Pt-doped SnO 2 Preparation of sol: The dopant chloroplatinic acid is added dropwise to the SnO obtained in step (1) at a mass ratio of 1.0% to tin 2 In the sol, the obtained sol was magnetically stirred at 500 r / min at room temperature for 24 h, and then aged at room temperature for 24 h;

[0022] (3) Keep the relative humidity of the air at 10%, drop the sol obtained in step (2) onto the polished surface of the silicon substrate...

Embodiment 1

[0025] Example 1 Prepared Pt-doped SnO 2 The X-ray diffraction pattern analysis results of ordered mesoporous films are as follows: figure 1 shown, indicating that SnO 2 The peak position of the characteristic diffraction peak is completely consistent with the standard card (JCPDS 41-1445), and no Pt peak appears, indicating that the prepared material is crystalline SnO 2 , and Pt has been doped in SnO 2 in the lattice; scanning electron microscopy ( figure 2 ) photos show that its morphology is a mesoporous structure with regular pores approximately vertical, with a pore diameter of about 15 nm; the sensitive properties are as follows image 3 As shown, Pt-doped SnO2 The ordered mesoporous film sensor has high sensitivity to methane.

Embodiment 2

[0027] (1) SnO 2 Preparation of sol: the precursor is polyisobutylene- b - Polyethylene oxide block copolymer, anhydrous tin tetrachloride, absolute ethanol and tetrahydrofuran, add the block copolymer to the absolute ethanol and tetrahydrofuran solution to prepare a sol at a mass ratio of 2:24:25, and ultrasonically vibrate 30 min, obtain transparent solution A, by mass ratio 1:6 with anhydrous SnCl 4 Dissolve in absolute ethanol to obtain solution B, slowly add solution B to A while stirring, and stir for 30 min to obtain SnO 2 Sol;

[0028] (2) Pt-doped SnO 2 Preparation of sol: The dopant chloroplatinic acid is added dropwise to the SnO obtained in step (1) at a mass ratio of 2.5% to tin 2 In the sol, the obtained sol was magnetically stirred at 500r / min at room temperature for 24 h, and then aged at room temperature for 24 h;

[0029] (3) Keep the relative humidity of the air at 15%, and drop the sol obtained in step (2) onto the polished surface of the silicon subst...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Apertureaaaaaaaaaa
Apertureaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for preparing a gas sensor based on a Pt-doped SnO2 ordered mesoporous film, and belongs to the technical field of preparation technology of inorganic semiconductor sensing materials. The gas sensor of the present invention uses Pt-doped SnO2 ordered mesoporous film as the sensing layer of the sensor, and adopts the self-diffusion solvent volatilization self-assembly method to prepare Pt-doped SnO2 on the polished surface of the silicon substrate sputtered with gold interdigitated electrodes. Ordered mesoporous film, the precursor used is polyisobutylene-b-polyethylene oxide block copolymer and anhydrous tin tetrachloride, absolute ethanol, tetrahydrofuran, and the dopant chloroplatinic acid is 1.0% by mass ratio to tin ~5.5% doping, and then place the silicon wafer product in a muffle furnace for heat treatment, the obtained film has a pore size of 12-15 nm, and a Pt-doped SnO2 ordered mesoporous film with regular vertical channels. Using the Pt-doped SnO2 ordered mesoporous film obtained by the invention to detect methane gas has the advantages of high sensitivity to methane gas, fast response and recovery speed, etc., and has good practical application value.

Description

technical field [0001] The invention relates to a Pt-doped SnO 2 The invention discloses a gas sensor preparation method of an ordered mesoporous film, which belongs to the technical field of preparation technology of inorganic semiconductor sensing materials. Pt-doped SnO 2 As a sensitive material to detect methane gas, ordered mesoporous films have the advantages of high sensitivity, fast response and recovery speed, etc., and can be used for rapid detection of methane gas. Background technique [0002] Methane is the main component of combustible ice, natural gas, biogas, methane gas and shale gas, and has flammability, explosiveness and greenhouse effect. 2 dozens of times. Therefore, it is very important to detect the generation source, leakage source and concentration of methane in time for the safe operation of industrial and mining, personal safety and environmental protection. [0003] Tin oxide is currently the most widely used semiconductor gas-sensing materia...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N27/12
Inventor 王毓德董成军肖雪春
Owner YUNNAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com