A kind of semiconductor device and its manufacturing method, electronic device

Abstract

The invention provides a manufacturing method for a semiconductor device, and the method comprises the steps: providing a semiconductor substrate; forming an interlayer dielectric layer on the semiconductor substrate, and a copper interconnection structure in the interlayer dielectric layer; forming a Si-rich first interface layer on the surface of the copper interconnection structure and the surface of the interlayer dielectric layer through deposition, wherein the first interface layer contains boron; processing the first interface layer through employing nitrogen or ammonia gas, so as to form a nitrogen-rich second interface layer; and forming an electric layer covering layer on the second interface layer through deposition. According to the method, the copper interconnection structure is provided with the nitrogen-rich second interface layer containing boron, and the interface layer is good in capability of stage coverage, especially at a corner. The method can improve the current leakage and breakdown performances, improves the electromigration characteristic, and improves the reliability and yield of the device. The interface layer contains boron, and can improve the antioxidation performance of the interface layer.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] With the development of integrated circuits, the feature size continues to decrease, and the current density of metal wires increases sharply; at the same time, the increase in chip integration leads to increased power consumption per unit area. Therefore, the reliability of metal wiring has always been an important issue in IC design. and important issues of concern to manufacturing. In metal wires, electrons moving in the opposite direction of the electric field exchange momentum with metal ions, resulting in diffusion-dominated mass transport of metal ions, a phenomenon known as electromigration. Electromigration is an important metal failure mechanism in interconnect structures of semiconductor devices. There are two types of failures caused by elec...

AI Technical Summary

Problems solved by technology

With the electromigration of Cu ions, atomic loss will occur near the cathode, and the local tension will gradually increase. After reaching a critical value, voids will be formed, which will lead to an increase in resistance and eventually lead to an open circuit in the interconnection line.

In the anode atom accumulation area, the local pressure is constantly increasing, so that there may be metal protrusions in this area. If the protruding metal contacts its adjacent metal interconnection, it will cause a short circuit in the interconnection line.

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