Curing resin composition and semiconductor device employing same

A technology of curable resin and composition, which can be used in semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., and can solve problems such as lack of records

Inactive Publication Date: 2015-12-30
DAICEL CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, although this patent document discloses corrosion resistance against hydrogen sulfide (H2S), it does not describe corrosion resistance against other corrosive gases at all.

Method used

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  • Curing resin composition and semiconductor device employing same
  • Curing resin composition and semiconductor device employing same
  • Curing resin composition and semiconductor device employing same

Examples

Experimental program
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Embodiment

[0204] Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.

[0205] reaction products and products 1 H-NMR analysis can be performed using JEOLECA500 (500MHz). In addition, the measurement of the number-average molecular weight and weight-average molecular weight of the reaction product and the product can use AllianceHPLC system 2695 (manufactured by Waters), RefractiveIndexDetector2414 (manufactured by Waters), chromatographic column: TskgelGMH HR -M×2 (manufactured by Tosoh Co., Ltd.), guard column: TskgelguardcolumnH HR L (manufactured by Tosoh Co., Ltd.), column oven: COLUMN HEATERU-620 (manufactured by Sugai), solvent: THF, and measurement conditions: 40°C.

[0206] [Polyorganosiloxane (A)]

[0207] As the polyorganosiloxane (A), the following products were used.

[0208] GD-1125A: manufactured by Changxing Chemical Industry Co., Ltd., vinyl content 1.13% by weight...

Synthetic example 1

[0214] 15.86 g of phenyltriethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd.) and 6.16 g of methyl isobutyl ketone (MIBK) were charged into the reaction vessel, and the mixture thereof was cooled to 10°C. To the above mixture were added dropwise 4.32 g of water and 0.16 g of 5N hydrochloric acid (2.4 mmol as hydrogen chloride) over 1 hour. After the dropwise addition, their mixture was kept at 10°C for 1 hour. Thereafter, 26.67 g of MIBK was added to dilute the reaction solvent.

[0215] Next, the temperature of the reaction container was raised to 70° C., and when the temperature reached 70° C., 0.16 g (25 mmoles as hydrogen chloride) of 5N hydrochloric acid was added, and polycondensation reaction was performed in a nitrogen atmosphere for 4 hours.

[0216] Then, 11.18 g of divinyltetramethyldisiloxane and 3.25 g of hexamethyldisiloxane were added to the reaction solution, and a silylation reaction was performed at 70° C. for 4 hours. Thereafter, the reaction solu...

Synthetic example 2

[0227] Feed 210.9g of 3-glycidoxypropyltrimethoxysilane, 20.8g of tetraethoxysilane, 210.9g of methanol, 20.8g of ethanol and 17.4g of potassium fluoride (1% ethanol solution) in the reaction vessel, And their mixture was warmed to 50°C.

[0228] Next, 16.2 g of water and 16.2 g of ethanol were dripped over 30 minutes, and after further heating up, polycondensation reaction was performed under reflux for 4 hours.

[0229] Thereafter, volatile components were distilled off while raising the temperature to 80° C. under normal pressure. Thereafter, the remaining volatile components were distilled off while heating up to 100° C. under reduced pressure (30 Torr), to obtain a colorless and transparent liquid reaction product (141.5 g).

[0230] [Zinc compound (E)]

[0231] As the zinc compound (E), the following products were used.

[0232] Zinc octanoate: manufactured by Nippon Chemical Industry Co., Ltd., trade name "NIKKAOcthix Zinc" (Zn: 15%)

[0233]

[0234] Examples 1-5...

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Abstract

Provided are a curing resin composition which has transparency, heat resistance, and pliability, as well as having thermal shock resistance and reflow resistance, which moreover has barrier properties with respect to hydrogen sulfide (H2S) gas and sulfur oxide (SOX) gases, and which is useful in sealing applications for semiconductor elements (especially optical semiconductor elements); and a cured article, sealing material, and semiconductor device employing the same. Provided are a curing resin composition containing (A) a polyorganosiloxane, (B) a silsesquioxane, and (C) an isocyanurate compound, the polyorganosiloxane (A) being a polyorganosiloxane having an aryl group, and the curing resin composition having viscosity of 4,000-8,000 mPa*s; and a cured article, sealing material, and semiconductor device employing the same.

Description

technical field [0001] The present invention relates to a curable resin composition, a cured product obtained using the curable resin composition, a sealing material, and a semiconductor device obtained using the sealing material. This application claims priority based on Japanese Patent Application No. 2013-163577 for which it applied in Japan on August 6, 2013, and uses the content here. Background technique [0002] In semiconductor devices requiring high heat resistance and high voltage resistance, heat resistance of about 150° C. or higher is generally required for materials covering semiconductor elements. In particular, materials (sealing materials) covering optical materials such as optical semiconductor elements are required to have excellent physical properties such as transparency and flexibility in addition to heat resistance. Currently, epoxy-based resin materials and silicone-based resin materials have been used as sealing materials in, for example, backlight ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L83/04C08K5/098C08K5/3477C08L83/05C08L83/07C08L83/14H01L23/29H01L23/31
CPCC09J183/10C08G77/12C08G77/20C08G77/80C08K5/098C08K5/34924H01L2224/48091H01L2924/181H01L2924/00012H01L2924/00014
Inventor 籔野真也板谷亮
Owner DAICEL CHEM IND LTD
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