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Glass film containing rare earth ion doped Ba2CsI5 microcrystal and preparation method thereof

A technology of rare earth ions and glass films, applied in the field of glass films containing rare earth ions doped with Ba2CsI5 microcrystals and its preparation, can solve problems such as device development limitations, achieve prevention of decomposition and volatilization, superior scintillation performance, and high transmittance Effect

Inactive Publication Date: 2016-03-09
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually thin films are the most suitable raw materials for making such devices, so the current form of scintillation materials will have great restrictions on the development of future devices

Method used

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  • Glass film containing rare earth ion doped Ba2CsI5 microcrystal and preparation method thereof
  • Glass film containing rare earth ion doped Ba2CsI5 microcrystal and preparation method thereof
  • Glass film containing rare earth ion doped Ba2CsI5 microcrystal and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Containing rare earth ions doped with Ba 2 CsI 5 The preparation method of the glass thin film of crystallite comprises following specific steps:

[0044] (1), prepare the raw materials in molar ratio: ethyl orthosilicate: trimethyl phosphate: gallium ethylate: barium iodide: cesium iodide: cerium iodide=75: 20: 16: 12: 6: 1, weigh Get a total amount of 30 grams of analytically pure raw materials for each preparation, stand-by;

[0045] (2), the hydrolysis of trimethyl phosphate: dissolve the trimethyl phosphate weighed in step (1) in dehydrated alcohol, the mol ratio of dehydrated alcohol and trimethyl phosphate is 2.5: 1, add acetylacetone rapidly , the volume ratio of acetylacetone and trimethyl phosphate is 0.7:1, and strong magnetic stirring is carried out, distilled water is gradually added dropwise, the molar ratio of distilled water and trimethyl phosphate is 0.5:1, and the hydrolysis reaction is carried out at room temperature for 1 hour to prepare into solu...

Embodiment 2

[0056] It is basically the same as Example 1, except that in the step (1), the raw materials are prepared according to the following molar ratio: ethyl orthosilicate: trimethyl phosphate: gallium ethylate: barium iodide: cesium iodide: europium iodide = 78: 10: 6: 22: 11: 3, each preparation raw material is weighed respectively; In the step (8), the pulling speed of the glass substrate in the gel solution is controlled at 1 mm / s, and the pulling is repeated 5 times, Each pulling interval is 15 minutes; in step (9), heat up to 100°C at a rate of 50°C per hour, and then heat up the furnace to 340°C at a rate of 50°C per hour; in step (10), Gradually raise the temperature of the furnace to 520 ° C, and react at this temperature for 2 hours, and finally obtain the rare earth ion-doped Ba 2 CsI 5 Microcrystalline 78SiO 2 -5P 2 o 5 -3Ga 2 o 3 -11Ba 2 CsI 5 -3EuI 2 System glass film.

[0057] For prepared Eu-containing 2+ Ion-doped Ba 2 CsI 5 Microcrystalline glass film ...

Embodiment 3

[0059] It is basically the same as Example 1, except that in the step (1), the raw materials are prepared according to the following molar ratio: ethyl orthosilicate: trimethyl phosphate: gallium ethylate: barium iodide: cesium iodide: terbium iodide= 76: 16: 10: 18: 9: 2, weigh each raw material respectively; in step (8), the pulling speed of the glass substrate in the gel solution is controlled at 0.6 mm / s, and the pulling is repeated 3 times, each time The pulling interval is 15 minutes; in step (9), heat up to 100°C at a rate of 40°C per hour, and then raise the temperature of the furnace to 340°C at a rate of 40°C per hour; in step (10), gradually increase the temperature Furnace to 510°C, and react at this temperature for 3 hours, and finally get doped Ba containing rare earth ions 2 CsI 5 Microcrystalline 76SiO 2 -8P 2 o 5 -5Ga 2 o 3 -9Ba 2 CsI 5 -2TbI 3 System glass film.

[0060] For prepared Tb-containing 3+ Ion-doped Ba 2 CsI 5 Microcrystalline glass fi...

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Abstract

The invention discloses a chemical composition and sol-gel preparation method of a glass film containing rare earth ion doped Ba2CsI5 microcrystal. The glass film is characterized by comprising 75-78mol% of silicon dioxide, 5-10mol% of phosphorus pentoxide, 3-8mol% of gallium oxide, 6-11mol% of Ba2CsI5 and 1-3mol% of rare earth iodide, wherein rare earth iodide is cerium iodide, europium (II) iodide or terbium iodide. The glass film and the preparation method have the advantages that a sol-gel method is technology for preparing glass by low-temperature aqueous chemical synthesis and is characterized by obtaining glass through precursor raw material hydrolysis and polymerization chemical reaction processes, so that the film material can be prepared under the condition of certain liquid viscosity; the low-temperature synthesis condition can conduce to effectively preventing decomposition and volatilization of the iodide raw material.

Description

technical field [0001] The invention relates to a glass thin film containing a rare earth ion doped crystallite, in particular to a rare earth ion doped Ba 2 CsI 5 Microcrystalline glass thin film and its preparation method. Background technique [0002] Scintillation material is a photofunctional material that can emit visible light under the excitation of high-energy rays (such as x-rays, γ-rays) or other radioactive particles, and can be widely used in nuclear medicine diagnosis, security inspection, anti-terrorism, high-energy physics and geological exploration and other fields. In recent years, with the rapid development of fields such as medical imaging and security inspection, there is a large demand for new scintillation materials with high performance. Excellent scintillation materials mainly have the following properties: high luminous efficiency, high material density, fast fluorescence decay, good radiation resistance and low production cost. [0003] As far ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/22
Inventor 冯治刚夏海平盛启国江东升王成张健何仕楠汤庆阳
Owner NINGBO UNIV
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