Method for growing gallium nitride crystals by utilizing coating silicon lining
A silicon substrate and gallium nitride technology, applied in the field of gallium nitride crystal growth, can solve problems such as lattice mismatch, and achieve the effect of regular crystal form, good application prospect, and improved GaN crystal quality
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Embodiment 1
[0026] (1) Boron nitride, Al(OH) 3 Powder and metal vanadium salt are mixed according to the mass ratio of 1:0.1:0.05 and added to the planetary ball mill for grinding for 10-15 minutes, and passed through a 20-100 mesh sieve;
[0027] (2) Put the grinding mixture in step (1) into a stirring reaction kettle, add ethanol and water with a volume ratio of 1:0.5~1 to make a dispersion with a mass concentration of 60~80%, add ester Starch, mix and disperse at a speed of 1000~5000rpm for 20~40min to obtain a mixed slurry;
[0028] (3) Pump the slurry obtained in step (2) into the feeding port of the co-rotating screw extruder, set the reaction temperature of the dispersing screw element section to 120~140°C, react for 10~20min, and the slurry passes through the dispersing screw element, Make aluminum ions and high melting point metal ions evenly inserted into the layered structure of boron nitride; add polyvinyl acetate through the auxiliary material port, and then pass through the...
Embodiment 2
[0032] (1) Boron nitride, Al(OH) 3Powder and metal molybdenum salt are mixed according to the mass ratio of 1:0.3:0.01 and added to the planetary ball mill for grinding for 10-15 minutes, and passed through a 20-100 mesh sieve;
[0033] (2) Put the grinding mixture in step (1) into a stirring reaction kettle, add ethanol and water with a volume ratio of 1:0.5~1 to make a dispersion with a mass concentration of 60~80%, add poly Ethylene glycol, mixed and stirred at a speed of 1000~5000rpm for 20~40min to obtain a mixed slurry;
[0034] (3) Pump the slurry obtained in step (2) into the feeding port of the co-rotating screw extruder, set the reaction temperature of the dispersing screw element section to 120~140°C, react for 10~20min, and the slurry passes through the dispersing screw element, Make aluminum ions and high-melting-point metal ions evenly inserted into the layered structure of boron nitride; add ethylene-vinyl acetate copolymer resin through the auxiliary material ...
Embodiment 3
[0038] (1) Boron nitride, Al(OH) 3 Powder and metal zirconium salt are mixed in a mass ratio of 1:0.1:0.01 and added to a planetary ball mill for grinding for 10-15 minutes, and passed through a 20-100 mesh sieve;
[0039] (2) Put the grinding mixture in step (1) into a stirred reactor, add ethanol and water with a volume ratio of 1:0.5~1 to make a dispersion with a mass concentration of 60~80%, add oil ammonium acid, mixed and stirred at a speed of 1000~5000rpm and dispersed for 20~40min to obtain a mixed slurry;
[0040] (3) Pump the slurry obtained in step (2) into the feeding port of the co-rotating screw extruder, set the reaction temperature of the dispersing screw element section to 120~140°C, react for 10~20min, and the slurry passes through the dispersing screw element, Make aluminum ions and high melting point metal ions evenly inserted into the layered structure of boron nitride; add perchlorethylene resin through the auxiliary material port, and then set the react...
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