Method for growing gallium nitride crystals by utilizing coating silicon lining

A silicon substrate and gallium nitride technology, applied in the field of gallium nitride crystal growth, can solve problems such as lattice mismatch, and achieve the effect of regular crystal form, good application prospect, and improved GaN crystal quality

Inactive Publication Date: 2016-04-13
CHENDU NEW KELI CHEM SCI CO LTD
View PDF5 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The invention adopts a silicon substrate as the base, and covers a layer of doped boron nitride sheet at the same time, improves the surface structure characteristics of the silicon substrate, and solves the lattice mismatch and the Pro

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] (1) Boron nitride, Al(OH) 3 Powder and metal vanadium salt are mixed according to the mass ratio of 1:0.1:0.05 and added to the planetary ball mill for grinding for 10-15 minutes, and passed through a 20-100 mesh sieve;

[0027] (2) Put the grinding mixture in step (1) into a stirring reaction kettle, add ethanol and water with a volume ratio of 1:0.5~1 to make a dispersion with a mass concentration of 60~80%, add ester Starch, mix and disperse at a speed of 1000~5000rpm for 20~40min to obtain a mixed slurry;

[0028] (3) Pump the slurry obtained in step (2) into the feeding port of the co-rotating screw extruder, set the reaction temperature of the dispersing screw element section to 120~140°C, react for 10~20min, and the slurry passes through the dispersing screw element, Make aluminum ions and high melting point metal ions evenly inserted into the layered structure of boron nitride; add polyvinyl acetate through the auxiliary material port, and then pass through the...

Embodiment 2

[0032] (1) Boron nitride, Al(OH) 3Powder and metal molybdenum salt are mixed according to the mass ratio of 1:0.3:0.01 and added to the planetary ball mill for grinding for 10-15 minutes, and passed through a 20-100 mesh sieve;

[0033] (2) Put the grinding mixture in step (1) into a stirring reaction kettle, add ethanol and water with a volume ratio of 1:0.5~1 to make a dispersion with a mass concentration of 60~80%, add poly Ethylene glycol, mixed and stirred at a speed of 1000~5000rpm for 20~40min to obtain a mixed slurry;

[0034] (3) Pump the slurry obtained in step (2) into the feeding port of the co-rotating screw extruder, set the reaction temperature of the dispersing screw element section to 120~140°C, react for 10~20min, and the slurry passes through the dispersing screw element, Make aluminum ions and high-melting-point metal ions evenly inserted into the layered structure of boron nitride; add ethylene-vinyl acetate copolymer resin through the auxiliary material ...

Embodiment 3

[0038] (1) Boron nitride, Al(OH) 3 Powder and metal zirconium salt are mixed in a mass ratio of 1:0.1:0.01 and added to a planetary ball mill for grinding for 10-15 minutes, and passed through a 20-100 mesh sieve;

[0039] (2) Put the grinding mixture in step (1) into a stirred reactor, add ethanol and water with a volume ratio of 1:0.5~1 to make a dispersion with a mass concentration of 60~80%, add oil ammonium acid, mixed and stirred at a speed of 1000~5000rpm and dispersed for 20~40min to obtain a mixed slurry;

[0040] (3) Pump the slurry obtained in step (2) into the feeding port of the co-rotating screw extruder, set the reaction temperature of the dispersing screw element section to 120~140°C, react for 10~20min, and the slurry passes through the dispersing screw element, Make aluminum ions and high melting point metal ions evenly inserted into the layered structure of boron nitride; add perchlorethylene resin through the auxiliary material port, and then set the react...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a substrate for epitaxial growth of semiconductor materials, in particular to a method for growing gallium nitride crystals by utilizing a coating silicon lining, wherein the coating silicon lining are bonded together by a silicon substrate and doping boron nitride slices through high pressure thermal treatment, the doping boron nitride slices comprise aluminum and high-melting metal doping hexagonal crystal system boron nitride nanosheets, and aluminum ions and high-melting metal ions are all inserted into a boron nitride laminated structure through a reaction of a co-rotating twin screw extruder. The method for growing the gallium nitride crystals by utilizing the coating silicon lining reduces lattice mismatch stress and thermal mismatching stress of the silicon lining and the gallium nitride crystals, reduces dislocation density gallium nitride (GaN) single crystals, obviously improves quality of GaN crystals, does not need to prepare gallium nitride base plates with special structures by adopting complex and expensive process, is simple in process, low in cost and low in growth temperature, and is suitable for volume production.

Description

technical field [0001] The invention belongs to the technical field of gallium nitride crystal growth, and more specifically relates to a method for growing gallium nitride crystals using a coated silicon substrate, aiming at improving the crystal quality of epitaxially grown GaN. Background technique [0002] Gallium nitride is a direct transition wide bandgap semiconductor material with a wide direct bandgap of 3.4eV, known as the third-generation semiconductor material. GaN material is also an extremely stable, hard and high-melting point material, which has excellent properties such as high electron saturation rate, small dielectric coefficient, good thermal conductivity and high radiation resistance. core base material. [0003] Due to the lack of homogeneous single-crystal materials, device applications of GaN-based materials are usually carried out on heterogeneous substrates, the most commonly used are sapphire substrates, silicon carbide substrates, and silicon sub...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B29/40C30B25/18
CPCC30B29/406C30B25/183
Inventor 陈庆孙丽枝叶任海
Owner CHENDU NEW KELI CHEM SCI CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap