A kind of preparation method of bismuth sulfide semiconductor film
A semiconductor, bismuth sulfide technology, applied in chemical instruments and methods, inorganic chemistry, bismuth compounds, etc., can solve the problems of complex equipment, high cost, difficult practical application, etc., to improve crystallinity and density, and prevent excessive growth rate. The effect of slow and good photoelectric conversion efficiency
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Embodiment 1
[0044] 1. Pretreatment of deposition substrate and preparation of precursor solution:
[0045] Choose 30×30×2mm FTO glass as the deposition substrate: a. Degreasing agent cleaning of the substrate: use detergent as the degreasing agent, place the glass substrate in the aqueous solution of detergent, and clean it by ultrasonic vibration at a high temperature of 30°C 60min. b. High-temperature alkali solution cleaning of the substrate: Add 100mL of ammonia water and 100mL of deionized water into a 500mL beaker, place the glass substrate in the above solution, and clean it with ultrasonic vibration at a high temperature of 50°C for 30min. c. Ultrasonic vibration ethanol cleaning of the substrate: Take 200mL of absolute ethanol and add it to a 500mL beaker, place the glass substrate in ethanol, and clean it by ultrasonic vibration at a high temperature of 40°C for 60min. d. Ultrasonic vibration washing of the substrate: the above-mentioned glass substrate was placed in a 1000 mL ...
Embodiment 2
[0062] 1. Pretreatment of deposition substrate and preparation of precursor solution:
[0063] Choose 30×30×2mm FTO glass as the deposition substrate: a. Degreasing agent cleaning of the substrate: use detergent as the degreasing agent, place the glass substrate in the aqueous solution of detergent, and clean it by ultrasonic vibration at a high temperature of 30°C 60min. b. High-temperature alkali solution cleaning of the substrate: Add 100mL of ammonia water and 100mL of deionized water into a 500mL beaker, place the glass substrate in the above solution, and clean it with ultrasonic vibration at a high temperature of 50°C for 30min. c. Ultrasonic vibration ethanol cleaning of the substrate: Take 200mL of absolute ethanol and add it to a 500mL beaker, place the glass substrate in ethanol, and clean it by ultrasonic vibration at a high temperature of 40°C for 60min. d. Ultrasonic vibration washing of the substrate: the above-mentioned glass substrate was placed in a 1000 mL ...
Embodiment 3
[0076] This embodiment illustrates a kind of bismuth sulfide provided by the invention (chemical formula is Bi 2 S 3 ) film preparation method.
[0077] 1. Pretreatment of deposition substrate and preparation of precursor solution:
[0078] Choose 30×30×2mm FTO glass as the deposition substrate: a. Degreasing agent cleaning of the substrate: use detergent as the degreasing agent, place the glass substrate in the aqueous solution of detergent, and clean it by ultrasonic vibration at a high temperature of 30°C 60min. b. High-temperature alkali solution cleaning of the substrate: Add 100mL of ammonia water and 100mL of deionized water into a 500mL beaker, place the glass substrate in the above solution, and clean it with ultrasonic vibration at a high temperature of 50°C for 30min. c. Ultrasonic vibration ethanol cleaning of the substrate: Take 200mL of absolute ethanol and add it to a 500mL beaker, place the glass substrate in ethanol, and clean it by ultrasonic vibration at ...
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