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A kind of preparation method of bismuth sulfide semiconductor film

A semiconductor, bismuth sulfide technology, applied in chemical instruments and methods, inorganic chemistry, bismuth compounds, etc., can solve the problems of complex equipment, high cost, difficult practical application, etc., to improve crystallinity and density, and prevent excessive growth rate. The effect of slow and good photoelectric conversion efficiency

Active Publication Date: 2017-07-04
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But most oxides have some shortcomings: TiO 2 The band gap of ZnO and ZnO is too large; Cu 2 O and the like are difficult to keep stable in solution; In 2 o 3 The raw material cost such as is too high, is difficult to obtain practical application; And WO 3 (2.7eV) and the like lack metallic properties, and it is difficult to obtain stable photocatalytic activity; Pb and Cd systems are inherently toxic and should not be used
Vacuum methods such as sputtering, evaporation, spray pyrolysis, molecular beam epitaxy, etc. are not conducive to industrial mass production due to complex equipment and high cost
The preparation of ionic liquid in liquid deposition technology such as ionic liquid method has the disadvantage of high cost, which also restricts the industrial application of ionic liquid
However, the hydrothermal method requires the use of high-pressure reactors to limit large-scale production, and is not suitable for the preparation of water-sensitive reactants, and nanoparticles may agglomerate
The solvothermal method requires a large amount of organic solvent, which is not economical, especially when using toxic organic reagents, it will pollute the environment, and the reaction is also carried out in an autoclave, which increases the risk and limits the application of large-scale production

Method used

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  • A kind of preparation method of bismuth sulfide semiconductor film
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  • A kind of preparation method of bismuth sulfide semiconductor film

Examples

Experimental program
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Effect test

Embodiment 1

[0044] 1. Pretreatment of deposition substrate and preparation of precursor solution:

[0045] Choose 30×30×2mm FTO glass as the deposition substrate: a. Degreasing agent cleaning of the substrate: use detergent as the degreasing agent, place the glass substrate in the aqueous solution of detergent, and clean it by ultrasonic vibration at a high temperature of 30°C 60min. b. High-temperature alkali solution cleaning of the substrate: Add 100mL of ammonia water and 100mL of deionized water into a 500mL beaker, place the glass substrate in the above solution, and clean it with ultrasonic vibration at a high temperature of 50°C for 30min. c. Ultrasonic vibration ethanol cleaning of the substrate: Take 200mL of absolute ethanol and add it to a 500mL beaker, place the glass substrate in ethanol, and clean it by ultrasonic vibration at a high temperature of 40°C for 60min. d. Ultrasonic vibration washing of the substrate: the above-mentioned glass substrate was placed in a 1000 mL ...

Embodiment 2

[0062] 1. Pretreatment of deposition substrate and preparation of precursor solution:

[0063] Choose 30×30×2mm FTO glass as the deposition substrate: a. Degreasing agent cleaning of the substrate: use detergent as the degreasing agent, place the glass substrate in the aqueous solution of detergent, and clean it by ultrasonic vibration at a high temperature of 30°C 60min. b. High-temperature alkali solution cleaning of the substrate: Add 100mL of ammonia water and 100mL of deionized water into a 500mL beaker, place the glass substrate in the above solution, and clean it with ultrasonic vibration at a high temperature of 50°C for 30min. c. Ultrasonic vibration ethanol cleaning of the substrate: Take 200mL of absolute ethanol and add it to a 500mL beaker, place the glass substrate in ethanol, and clean it by ultrasonic vibration at a high temperature of 40°C for 60min. d. Ultrasonic vibration washing of the substrate: the above-mentioned glass substrate was placed in a 1000 mL ...

Embodiment 3

[0076] This embodiment illustrates a kind of bismuth sulfide provided by the invention (chemical formula is Bi 2 S 3 ) film preparation method.

[0077] 1. Pretreatment of deposition substrate and preparation of precursor solution:

[0078] Choose 30×30×2mm FTO glass as the deposition substrate: a. Degreasing agent cleaning of the substrate: use detergent as the degreasing agent, place the glass substrate in the aqueous solution of detergent, and clean it by ultrasonic vibration at a high temperature of 30°C 60min. b. High-temperature alkali solution cleaning of the substrate: Add 100mL of ammonia water and 100mL of deionized water into a 500mL beaker, place the glass substrate in the above solution, and clean it with ultrasonic vibration at a high temperature of 50°C for 30min. c. Ultrasonic vibration ethanol cleaning of the substrate: Take 200mL of absolute ethanol and add it to a 500mL beaker, place the glass substrate in ethanol, and clean it by ultrasonic vibration at ...

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Abstract

The invention discloses a preparation method of a bismuth sulfide semiconductor film. The preparation method comprises the steps: soaking a substrate successively in a bismuth-salt ethylene glycol methyl ether solution and a sulfur compound-containing organic solution, then carrying out heat treatment in a protection atmosphere, and growing the bismuth sulfide semiconductor film on the surface of the substrate. The method is simple in operation, low in cost, good in reproducibility and easy in continuous mass production. The method can control the thickness of the bismuth sulfide film and the continuous compact growth of the bismuth sulfide film in a large area; and the prepared bismuth sulfide semiconductor film is homogenous in thickness, good in crystallinity, continuous, compact and good in photoelectric property.

Description

technical field [0001] The invention relates to a method for preparing a bismuth sulfide semiconductor thin film, in particular to preparing a bismuth sulfide semiconductor thin film material with photoelectric catalytic degradation organic matter performance on a substrate by using an organic solution deposition method combined with a heat treatment method, and belongs to the technical field of new energy sources for photoelectric materials. Background technique [0002] In recent years, environmental pollution has attracted more and more attention from the world, and water pollution is the focus of attention. Organic dyes are an important aspect of water pollution. They have strong coloring ability, are easy to be found in water systems, and have a wide range of sources. Their complex atomic structures make them stable and difficult to be biodegraded. The dyes in the solution can reflect and absorb part of the sunlight, thereby affecting photosynthetic activity and ultimat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G29/00C02F1/30C02F101/30
CPCC01G29/00C02F1/30C02F2101/308C02F2305/10
Inventor 蒋良兴汪颖陈建宇刘芳洋孙凯乐赖延清
Owner CENT SOUTH UNIV
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