Flexible zinc oxide schottky diode and its preparation method

A technology of Schottky diodes and zinc oxide, which is applied in semiconductor/solid-state device manufacturing, organic semiconductor devices, semiconductor devices, etc., can solve problems such as multi-crystal grains and interfaces, device stability consistency, and poor flexibility. Achieve the effects of less intercrystalline interface, avoid device working stability, and simple process

Active Publication Date: 2019-01-08
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Under normal conditions, the zinc oxide film is easy to form a wurtzite polycrystalline structure, there are more grains and interfaces, and the existence of grain inhomogeneity and grain boundaries leads to the stability of the device and the consistency of large-area preparation and flexibility

Method used

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  • Flexible zinc oxide schottky diode and its preparation method
  • Flexible zinc oxide schottky diode and its preparation method

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Experimental program
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Embodiment 1

[0023] This embodiment provides a method for preparing a flexible zinc oxide Schottky diode, comprising the following steps:

[0024] Dissolving zinc nitrate hexahydrate in methoxyethanol to prepare a zinc nitrate organic solution with a zinc ion molar concentration of 0.1 mol / L; then slowly adding acetylacetone of the same molar amount as the zinc ion to the zinc nitrate organic solution for magnetic stirring After 2 hours, a clear and transparent solution A was formed;

[0025] Dissolve polytetravinylphenol in 2-methoxyethanol solution and magnetically stir for 2 hours to form a polytetravinylphenol organic solution with a mass concentration of 20 g / L; Adding the polytetravinylphenol organic solution to the clear and transparent solution A for magnetic stirring for 4 hours to obtain the precursor solution;

[0026] The precursor solution is dropped on the ITO conductive layer with a polyethylene flexible substrate, spin-coated with a desktop coater for 30 seconds, the rotat...

Embodiment 2

[0032] This embodiment provides a method for preparing a flexible zinc oxide Schottky diode. The specific steps are roughly the same as those in Embodiment 1, except that:

[0033] In this embodiment, zinc nitrate is used as a solute and methoxyethanol as a solvent to configure a zinc nitrate organic solution with a zinc ion concentration of 0.15 mol / L, and then glycine and The urea was magnetically stirred for 3 hours to form the clear and transparent solution A.

[0034] The structure of the flexible ZnO Schottky diode prepared by the above preparation method in this embodiment is the same as that in Embodiment 1.

Embodiment 3

[0036] This embodiment provides a method for preparing a flexible zinc oxide Schottky diode. The specific steps are roughly the same as those in Embodiment 1, except that:

[0037] In this embodiment, the precursor solution is spin-coated on the ITO conductive layer of the flexible substrate, heat treated at 250° C. for 15 minutes, and the above steps of spin coating and heat treatment are repeated to form a 200-nm-thick polycarbonate layer on the ITO conductive layer. Vinylphenol hybrid ZnO films were annealed at 250°C for 5 hours.

[0038]The structure of the flexible ZnO Schottky diode prepared by the above preparation method in this embodiment is the same as that in Embodiment 1.

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Abstract

The invention provides a flexible zinc oxide Schottky diode and a preparation method thereof. The sol-gel method is used to form a flexible zinc oxide Schottky diode on an ITO conductive layer with a flexible substrate with reagents such as zinc nitrate organic solution and polytetravinylphenol organic solution. A better flexible polytetravinylphenol hybrid zinc oxide film, and a thermal evaporation coating method is used to evaporate a precious metal layer on the surface of the polytetravinylphenol hybrid zinc oxide film to obtain a flexible zinc oxide Schottky diode. The polytetravinylphenol hybridized zinc oxide film prepared by the method has high flexibility, so that the prepared diode has good mechanical bending performance and stable electrical performance, and the method has simple process and easy-to-obtain raw materials.

Description

technical field [0001] The invention relates to the field of electronic materials and components, in particular to a flexible zinc oxide Schottky diode and a preparation method thereof. Background technique [0002] The development of large-area flexible electronic circuits urgently requires new semiconductor materials, which need to have good mechanical flexibility and excellent electrical properties. Compared with traditional silicon material semiconductors, organic semiconductor materials have good mechanical flexibility, but there are big problems in their electrical properties and stability. In recent years, amorphous metal oxide semiconductors have become a research hotspot for new electronic materials. Metal oxides have high mobility, high optical transmittance, stable electrical properties, and excellent mechanical bending properties, so they are used in flexible electronic devices. There are obvious advantages in application. [0003] Zinc oxide is an excellent me...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/40H01L51/05
CPCH10K71/12H10K71/40H10K10/23H10K2102/00
Inventor 张新安郑海务杨光刘献省李爽张伟风
Owner HENAN UNIVERSITY
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