Light emitting diode including quantum dots and energy transfer molecules and fabrication method and display device thereof

A technology of light-emitting diodes and energy transfer, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of difficult carrier injection into quantum dots, low internal quantum efficiency, limiting the development and application of QLEDs, large-scale commercialization and Industrial production, etc.

Inactive Publication Date: 2017-01-25
SUZHOU XINGSHUO NANOTECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main disadvantage of the second type of QLED is its low internal quantum efficiency, which is derived from the existence of energy level barriers in quantum dots, especially when they are coated with a layer of organic ligands, due to the low conductivity of semiconductor nanocrystals. , making it more difficult for carriers to be injected into the quantum dots, thus exacerbating the problem of low quantum efficiency
The inherent toxicity of these cadmium materials, the high cost of handling and disposing of these cadmium materials, and the concern that cadmium-based materials will cause damage to the environment limit the development and application of QLEDs, including large-scale commercialization and industrialization that require full life cycle management. Production

Method used

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  • Light emitting diode including quantum dots and energy transfer molecules and fabrication method and display device thereof
  • Light emitting diode including quantum dots and energy transfer molecules and fabrication method and display device thereof
  • Light emitting diode including quantum dots and energy transfer molecules and fabrication method and display device thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0130] Synthesis of P8 molecule:

[0131] Under an argon atmosphere, 3.29g (6mmol) of 2,7-dibromo-9,9-dioctylfluorene was dissolved in 80ml of anhydrous tetrahydrofuran, and the temperature was lowered to -78°C (dry ice-acetone bath). 5.1 ml of n-butyl lithium (2.5M in hexane; 12.75 mmol) was slowly added dropwise to give a thick bright yellow solution. Stirring was continued at -70°C for 20 min, then the temperature of the reaction mixture was raised to 0°C. Then the temperature was raised to normal temperature, and 2.8 g (12.75 mmol) of diphenylphosphine chloride were added. The reaction was stirred at -70°C for an additional 3 hours before quenching with 2 ml of degassed methanol. The volatiles were removed under reduced pressure to leave an oily liquid. The crude material was purified by column chromatography on silica (R f =0.29), with chloroform / n-hexane (2:8) as the mobile phase, and finally 3.50 g (77%) of chemically pure P8 was obtained.

Embodiment 2

[0133] Synthesis of PO8 molecules:

[0134] Mix 3.03 g (4 mmol) of P8, 50 ml of dichloromethane and 10 ml of 30% hydrogen peroxide solution, and mix and stir overnight at room temperature. The organic layer was separated and washed successively with water and brine. The product was evaporated to dryness to give a white solid, which was further purified by recrystallization from toluene / n-hexane to give 2.7 g (85%) of chemically pure PO8.

Embodiment 3

[0136] Pre-treatment and cleaning of pre-patterned ITO flakes:

[0137] Set 12 pre-patterned ITO chips covered with polymer on the glass substrate, and immerse in 5% sodium hydroxide aqueous solution at 80° C. for 5 min. Repeat the above steps, and then wash the chip with nanopure water and 20% ethanolamine aqueous solution, and sonicate for 15 minutes, then wash and dry with sufficient nanopure water. Finally, load the ITO chip into the plasma cleaning chamber to clean the surface of the ITO-coated device.

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Abstract

The invention provides a light emitting diode. The light emitting diode comprises a substrate, positive pole, hole transfer layer, emitting layer, electron transport layer and negative pole. The emitting layer comprises quantum dots and energy transfer molecules. The energy transfer molecules crosslink with the quantum dots by click chemistry. The energy transfer molecules, as dispersion medium of the quantum dots, have high electron / hole carrier injection ability, which can promote the production of excitons in energy transfer molecules and realize effective energy transfer from energy transfer molecules to fluorescent quantum dots. At certain voltage, the device can emit within the wavelength range of 380-900nm, with the maximum emitting peak covering ultraviolet to dark red light range. The invention further discloses the fabrication method and electronic display equipment of a light emitting diode.

Description

technical field [0001] The invention relates to the technical field of display product manufacturing, in particular to a light-emitting diode device including quantum dots and energy transfer molecules and a preparation method thereof, and a display device including the light-emitting secondary light device. Background technique [0002] Quantum dots are nanometer-sized semiconductor nanocrystals with controllable surface chemical states and size-dependent optical properties. Quantum dots can be photoluminescent and electroluminescent. In display device applications, quantum dots are not inferior to organic light-emitting diodes (OLEDs), and have the following advantages: 1) lifetime, quantum dots are composed of inorganic cores, and have a potentially long life; 2) color purity, quantum dots produce There are many kinds of colors, providing end users with an improved super visual experience; 3) flexibility, quantum dots are soluble in both water and non-aqueous solvents, w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/111H10K85/649H10K50/115H10K2102/00H10K71/00H10K50/00
Inventor 王允军孔祥兴刘雄王军佐
Owner SUZHOU XINGSHUO NANOTECH CO LTD
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