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A kind of p-type nimsno amorphous oxide semiconductor thin film and preparation method thereof

A technology of amorphous oxide and semiconductor, applied in semiconductor/solid-state device manufacturing, vacuum evaporation plating, coating, etc., to achieve the effect of promoting development and good material properties

Inactive Publication Date: 2019-04-16
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the currently reported AOS TFTs are all n-type channel, lack of p-type channel AOS TFT, which greatly restricts the application of AOS TFT in new generation display, transparent electronics and many other fields.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] (1) With high-purity NiO, Ga 2 o 3 and SnO powder as raw materials, mixed, ground, and sintered in an Ar atmosphere at 1100°C to make NiGaSnO ceramic sheets as targets, in which the atomic ratio of Ni, Ga, and Sn is 0.5:0.2:0.3;

[0026] (2) Using the pulsed laser deposition (PLD) method, the substrate and target were installed in the PLD reaction chamber, and the vacuum was evacuated to a vacuum degree of 9×10 -4 Pa;

[0027] (3) Pass into O 2 As the working gas, the gas pressure is 5Pa, and the substrate temperature is 500°C. The target is bombarded with pulsed laser, and the atoms and molecules on the surface of the target are melted and deposited on the substrate to form a thin film. 2 Naturally cooled to room temperature in the atmosphere to obtain p-type Ni 0.5 Ga 0.2 sn 0.3 o 1.1 Amorphous thin film.

[0028] Using quartz as the substrate, p-type Ni was prepared according to the above growth steps 0.5 Ga 0.2 sn 0.3 o 1.1 The film was tested for its st...

Embodiment 2

[0030] (1) With high-purity NiO, Ga 2 o 3 and SnO powder as raw materials, mixed, ground, and sintered in an Ar atmosphere at 1050°C to make NiGaSnO ceramic sheets as targets, in which the atomic ratio of Ni, Ga, and Sn is 0.6:0.2:0.2;

[0031] (2) Using the pulsed laser deposition (PLD) method, the substrate and target were installed in the PLD reaction chamber, and the vacuum was evacuated to a vacuum degree of 9×10 -4 Pa;

[0032] (3) Pass into O 2 As the working gas, the gas pressure is 6Pa, and the substrate temperature is 300°C. The target is bombarded with pulsed laser, and the atoms and molecules on the surface of the target are melted and evaporated to form a thin film on the substrate. 2 Naturally cooled to room temperature in the atmosphere to obtain p-type Ni 0.6 Ga 0.2 sn 0.2 o 1.1 Amorphous thin film.

[0033] Using quartz as the substrate, p-type Ni was prepared according to the above growth steps 0.6 Ga 0.2 sn 0.2 o 1.1 The film was tested for its str...

Embodiment 3

[0035] (1) With high-purity NiO, Ga 2 o 3 and SnO powder as raw materials, mixed, ground, and sintered in an Ar atmosphere at 1000°C to make NiGaSnO ceramic sheets as targets, in which the atomic ratio of Ni, Ga, and Sn is 0.7:0.1:0.2;

[0036] (2) Using the pulsed laser deposition (PLD) method, the substrate and target were installed in the PLD reaction chamber, and the vacuum was evacuated to a vacuum degree of 9×10 -4 Pa;

[0037] (3) Pass into O 2 As the working gas, the gas pressure is 7Pa, and the substrate temperature is 25°C. The target is bombarded with pulsed laser, and the atoms and molecules on the surface of the target are melted and deposited on the substrate to form a thin film to obtain p-type Ni. 0.7 Ga 0.1 sn 0.2 o 1.05 Amorphous thin film.

[0038] Using quartz as the substrate, p-type Ni was prepared according to the above growth steps 0.7 Ga 0.1 sn 0.2 o 1.05 The film was tested for its structure, electrical and optical properties. The test resu...

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Abstract

The invention discloses a p-type NiMSnO amorphous oxide semiconductor film, the element M in the NiMSnO has low standard electrode potential and high binding energy with O, an oxide formed by the M and the O is a high-resistance oxide, the forbidden band width of the oxide is larger than 3 eV, and the M is any one of Be, Mg, Ca, Sr, Ba, B, Al, Ga, In, Sc, Y, Si, Ge, Hf, Zr, Mn, Fe, Nb, V, Sc, Rh or Co; in addition, Ni is +2 valence and is a matrix element in the p-type NiMSnO amorphous oxide, and the Ni is combined with the O to form the p-type conduction characteristic of the NiMSnO; the M is combined with the O in a matrix and is served as a control element of hole concentration; and Sn is +2 valence and combined with the O to play a role of a hole transmission channel. The invention furthermore discloses a preparation method of the p-type NiMSnO amorphous oxide semiconductor film. A NiGaSnO ceramic wafer is served as a target material, a pulse laser deposition method is adopted, the hole concentration of the prepared p-type NiMSnO amorphous oxide semiconductor film is 10<12>-10<14>m<3>, and visible light transmittance is larger than or equal to 80%. The film material provided by the invention can be used for a p-type amorphous film transistor.

Description

technical field [0001] The invention relates to an amorphous oxide semiconductor thin film, in particular to a p-type amorphous oxide semiconductor thin film and a preparation method thereof. Background technique [0002] Thin film transistor (TFT) is one of the core technologies in the field of microelectronics, especially display engineering. At present, TFT is mainly based on amorphous silicon (a-Si) technology, but a-Si TFT is opaque, has strong photosensitivity, and needs to add a mask layer. The pixel aperture ratio of the display screen is low, which limits the display performance. And the mobility of a-Si is low (~2 cm 2 / Vs), cannot meet some application requirements. Although TFT based on polysilicon (p-Si) technology has high mobility, its device uniformity is poor and its fabrication cost is high, which limits its application. In addition, organic semiconductor thin-film transistors (OTFT) have also been studied a lot, but the stability of OTFT is not high, an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/28C23C14/08H01L21/02
CPCC23C14/08C23C14/28H01L21/02521H01L21/02631
Inventor 吕建国于根源叶志镇
Owner ZHEJIANG UNIV
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