Method for preparing high-energy-storage-density glass ceramic thin film

Abstract

The invention discloses a method for preparing a high-energy-storage-density glass ceramic thin film. The method comprises the following steps: (1) selecting, batching, grinding and mixing raw materials, the raw materials being PbO, SrCO3, Na2CO3, Nb2O5 and SiO2, heating and melting the raw materials, and forming the raw materials into a flaky object in a mold; (2) performing controllable crystallization heat treatment on the flaky object prepared in step (1) to obtain a glass ceramic plate using a niobate ceramic phase as a primary crystalline phase, and performing machining to obtain a wafer target material; (3) cleaning a heavily-doped silicon substrate, removing an oxide layer on the heavily-doped silicon surface to obtain a base wafer, and depositing the base wafer and the target material obtained in step (2) respectively; (4) preparing a regular pattern by virtue of a photoetching process, performing gold plating on the surface of the target material by virtue of magnetron sputtering for 3min to form a top electrode, and performing aluminum plating at the bottom of the base wafer for 15min to enable aluminum and the heavily-doped silicon base wafer to form ohmic contact to form a bottom electrode, thus forming a capacitor of an MIM (metal-insulator-metal) structure.

Description

technical field [0001] The invention relates to a method for preparing a glass ceramic thin film with high energy storage density. Background technique [0002] Capacitors with high energy storage density are a research hotspot in recent years. They are widely used in practical applications, for example, they can be used to store energy, and they can also be used as DC bus capacitors in electronic devices. Among them, film capacitors have gradually attracted widespread attention due to their small size, low driving voltage, high storage energy density, simple manufacturing process, easy integration of components and high reliability. [0003] Film capacitors generally use ceramics or polymers as the dielectric layer, which have high relative permittivity or breakdown voltage respectively. At present, the common polymer materials are mainly polypropylene and polyvinylidene fluoride, etc. The commonly used ceramic materials are mainly titanate series, and glass ceramics is a ...

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Problems solved by technology

[0004] The current ferroelectric thin film energy storage capacitors are mainly titanate series. For example, Ogihara H et al. prepared 0.7BaTiO by solid-state reaction method. 3 -0.3BiScO 3 Ceramics, at room temperature, when the electric field is 73kV / mm, the energy storage density is ~6.1J / cm 3 , There are many preparation methods, such as Guo D J et al prepared BZT film on Pt substrate by sol-gel method, Guo Y P et al used chemical solution deposition method to Pt / Ti / SiO 2 / Si as the substrate prepared a sandwich structure of BaTiO 3 Base film, QIN W F etc. using pulsed laser deposition method on LaNiO 3 / LaAlO 3 Ba grown on the (001) substrate 0.6 mn 0.4 TiO 3 (BST) and Ba(Zr 0.2 Ti 0.8 )O 3 (BZT) single-layer film, the prepared film is in the state of coexistence of ceramic phase and pores. Due to the existence of pores, the withstand voltage level and leakage current of the dielectric film become short boards that limit the application of materials.

And the advantages of the glass-ceramic thin film being compact and void-free make it obtain high breakdown field strength and low leakage current while maintaining a certain dielectric constant. At present, there is no report for the preparation of the glass-ceramic thin film. The present invention provides A method for preparing high energy storage density glass ceramic thin film

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