Aluminum-based dielectric paste containing flaky silicon dioxide and preparation method thereof

A medium slurry and silica technology, applied in the direction of metal oxide, cellulose material, plastic/resin/wax insulator, etc., can solve the problem of high density of stainless steel substrate, poor machinability, large thermal expansion coefficient of metal aluminum, etc. problem, to achieve the effect of improving corrosion resistance, good insulation performance and high breakdown voltage

Inactive Publication Date: 2017-06-13
DONGGUAN COREHELM ELECTRONICS MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As the substrate of high-power electric heating elements, traditional ceramic materials can no longer meet the heat transfer and heat dissipation requirements of existing electric heating elements, and the ceramic substrate is brittle and has poor machining performance, which is not conducive to large-area printing, cutting and installation.
[0004] In addition, the stainless steel substrate has the advantages of good mechanical properties and good impact resistance, and is increasingly used in thick-film high-power heating elements; however, the high density of stainless steel substrates is not conducive to lightweight products; stainless steel thick-film circ

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Embodiment 1, an aluminum-based dielectric slurry containing flaky silica, including the following materials by mass, specifically:

[0029] Low melting point glass powder 50%

[0030] Flake silica powder 10%

[0031] Organic Vehicle 37%

[0032] Colorant 3%.

[0033] Among them, the low melting point glass powder is made of Li 2 CO 3 、K 2 CO 3 , Rb 2 CO 3 , ZnO, SiO 2 、 Bi 2 o 3 , B 2 o 3 , CaO, BaO, SrO, V 2 o 5 ,P 2 o 5 、TiO 2 , Sb 2 o 3 Composition, its mass parts are: 15%, 1%, 1%, 18%, 43%, 3%, 2%, 2%, 1%, 1%, 3%, 1%, 8%, 1%.

[0034] Among them, the particle size of the flaky silica powder is 0.5-10 μm, and the diameter-to-thickness ratio is 4:1-20:1.

[0035] In addition, the organic carrier includes the following materials by mass, specifically:

[0036] Ethyl cellulose 5%

[0037] Terpineol 20%

[0038] Butyl Carbitol 20%

[0039] Butyl Carbitol Acetate 35%

[0040] Tributyl Citrate 3%

[0041] 1,4-Butyrolactone 5%

[0042] Hydrogena...

Embodiment 2

[0050] Embodiment 2, an aluminum-based dielectric slurry containing flaky silica, including the following materials by mass, specifically:

[0051] Low melting point glass powder 50%

[0052] Flake silica powder 14%

[0053] Organic Vehicle 33%

[0054] Colorant 3%.

[0055] Among them, the low melting point glass powder is made of Li 2 CO 3 、K 2 CO 3 , Rb 2 CO 3 , ZnO, SiO 2 、 Bi 2 o 3 , B 2 o 3 , CaO, BaO, SrO, V 2 o 5 ,P 2 o 5 、TiO 2 , Sb 2 o 3 Composition, its mass parts are: 15%, 1%, 1%, 18%, 43%, 3%, 2%, 2%, 1%, 1%, 3%, 1%, 8%, 1%.

[0056] Among them, the particle size of the flaky silica powder is 0.5-10 μm, and the diameter-to-thickness ratio is 4:1-20:1.

[0057] In addition, the organic carrier includes the following materials by mass, specifically:

[0058] Ethyl cellulose 5%

[0059] Terpineol 20%

[0060] Butyl Carbitol 20%

[0061] Butyl Carbitol Acetate 35%

[0062] Tributyl Citrate 3%

[0063] 1,4-Butyrolactone 5%

[0064] Hydrogena...

Embodiment 3

[0072] Embodiment 3, an aluminum-based dielectric slurry containing flaky silica, including the following materials by mass, specifically:

[0073] Low melting point glass powder 50%

[0074] Flake silica powder 18%

[0075] Organic vehicle 32%.

[0076] Among them, the low melting point glass powder is made of Li 2 CO 3 、K 2 CO 3 , Rb 2 CO 3 , ZnO, SiO 2 、 Bi 2 o 3 , B 2 o 3 , CaO, BaO, SrO, V 2 o 5 ,P 2 o 5 、TiO 2 , Sb 2 o 3 Composition, its mass parts are: 15%, 1%, 1%, 20%, 45%, 2%, 3%, 1%, 2%, 1%, 3%, 1%, 4%, 1%.

[0077] Among them, the particle size of the flaky silica powder is 0.5-10 μm, and the diameter-to-thickness ratio is 4:1-20:1.

[0078] In addition, the organic carrier includes the following materials by mass, specifically:

[0079] Ethyl cellulose 7%

[0080] Terpineol 20%

[0081] Butyl Carbitol 30%

[0082] Butyl Carbitol Acetate 30%

[0083] Tributyl Citrate 7%

[0084] 1,4-Butyrolactone 4%

[0085] Hydrogenated Castor Oil 1%

[...

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Abstract

The present invention discloses an aluminum-based dielectric paste containing flaky silicon dioxide and a preparation method thereof. The aluminum-based dielectric paste comprises, by mass, 40-70% of low melting-point glass powder, 0-20% (not including 0) of flaky silicon dioxide powder, 20-40% of organic carrier, and 0-3% of colorant. The aluminum-based dielectric paste has the following advantages: (1) the thermal expansion coefficient of low melting-point glass is greater than 16*10 <-6> m/K, so that the low melting-point glass can well match with an aluminum-based plate; the melting point of the low melting-point glass powder is less than 600 DEG C, so that the low melting-point glass powder can be sintered under the melting point of aluminum; (2) according to the addition of flaky silicon dioxide (quartz) powder, the corrosion resistance, oxidation resistance, heat resistance and electrical insulation performance of a dielectric layer are effectively improved; (3) an insulating dielectric layer made of the insulating dielectric paste has good binding force with the aluminum-based plate, high breakdown voltage and good insulation performance. The preparation method comprises the preparation of the low melting-point glass powder, the preparation of the organic carrier and the preparation of the dielectric paste.

Description

technical field [0001] The invention relates to the technical field of insulating dielectric paste and insulating encapsulating paste for thick-film circuits, in particular to an aluminum-based dielectric paste containing flaky silicon dioxide and a preparation method thereof. Background technique [0002] The insulating dielectric paste is mainly attached to the surface of the metal substrate to insulate the thick film circuit from the metal substrate; the encapsulation dielectric paste is mainly to encapsulate the printed and sintered thick film circuit to prevent the harmful influence of the external environment and It plays the role of making the thick film circuit have stable electrical performance, avoiding the erosion of harmful substances from the outside, preventing mechanical damage and forming an insulating layer with other conductors. [0003] Thick film technology is to apply materials such as insulating dielectric paste, resistor paste, electrode paste and enca...

Claims

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Application Information

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IPC IPC(8): H01B3/08H01B3/10H01B3/18H01B3/20H01B3/30H01B19/00
CPCH01B3/087H01B3/08H01B3/10H01B3/185H01B3/20H01B3/307H01B19/00
Inventor 徐方星苏冠贤张念柏
Owner DONGGUAN COREHELM ELECTRONICS MATERIAL TECH CO LTD
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