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Copper ion-doped nickel oxide colloidal nano-crystal preparation method and product thereof, and applications of copper ion-doped nickel oxide colloidal nano-crystal

A nickel oxide and nanocrystalline technology, applied in the preparation of nickel compounds, nickel oxide/hydroxide, nanotechnology, etc., can solve the problems of limited application and incompatibility with high temperature resistance.

Active Publication Date: 2017-07-21
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This preparation method is not compatible with substrates with low high temperature resistance (such as tin-doped indium oxide transparent conductive substrates and flexible polymer conductive substrates), which greatly limits the application of copper ion-doped nickel oxide thin films in solution process optoelectronic devices. application in

Method used

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  • Copper ion-doped nickel oxide colloidal nano-crystal preparation method and product thereof, and applications of copper ion-doped nickel oxide colloidal nano-crystal
  • Copper ion-doped nickel oxide colloidal nano-crystal preparation method and product thereof, and applications of copper ion-doped nickel oxide colloidal nano-crystal
  • Copper ion-doped nickel oxide colloidal nano-crystal preparation method and product thereof, and applications of copper ion-doped nickel oxide colloidal nano-crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0094] A preparation method for copper ion-doped nickel oxide colloidal nanocrystals, comprising the following steps:

[0095] (1) Synthesis of metal precursors

[0096] 1) Synthesis of nickel isobutyrate (nickelisobutyrate, Ni(iBu) 2 ):

[0097] Weigh 20mmol (1.7800g) of isobutyric acid (liquid) and dissolve it in 30g of anhydrous methanol to obtain an isobutyric acid solution; another weigh 20mmol (3.6986g) of tetramethylammonium hydroxide pentahydrate and dissolve it in 10g of anhydrous In water and methanol, a tetramethylammonium hydroxide solution was obtained; the two solutions were mixed and stirred for 20 minutes, and acid-base neutralization reaction was carried out to obtain solution I;

[0098] Then weigh 10mmol (2.9673g) of nickel nitrate hexahydrate, dissolve it in 10g of anhydrous methanol to obtain solution II; add solution II dropwise to solution I, and keep stirring for 30min to fully proceed the reaction to obtain solution III ;

[0099] After adding exce...

Embodiment 2

[0111] A preparation method for copper ion-doped nickel oxide colloidal nanocrystals, comprising the following steps:

[0112] (1) Synthesis of metal precursors

[0113] 1) Synthesis of nickel 2-ethylhexanoate:

[0114] Nickel iso-octanoate was synthesized in the same manner as in Example 1 "1) Synthesis of nickel isobutyrate, except that iso-octanoic acid was used instead of isobutyric acid.

[0115] 2) Synthesis of copper 2-ethylhexanoate

[0116] Copper isooctanoate was synthesized in the same manner as in Example 1 "2) Synthesis of copper isobutyrate, except that isooctanoic acid was used instead of isobutyric acid.

[0117] (2) Synthesis of copper ion-doped nickel oxide colloidal nanocrystals (Cu x Ni 1-x O nanocrystal)

[0118] 1) Synthesis of nickel oxide nanocrystals:

[0119] The synthesis of nickel oxide nanocrystals was carried out on a Schlenk device, as follows: 0.5 mmol of nickel isooctanoate, 0.2 mmol of potassium stearate, 3 mmol of dodecyl alcohol and 5 ...

Embodiment 3

[0126] A preparation method for copper ion-doped nickel oxide colloidal nanocrystals, comprising the following steps:

[0127] (1) Synthesis of metal precursors

[0128] 1) 1) Synthesis of nickel isobutyrate (nickelisobutyrate, Ni(iBu) 2 ):

[0129] Same as Example 1.

[0130] 2) Synthesis of copper 2-ethylhexanoate

[0131] Same as Example 2.

[0132] (2) Synthesis of copper ion-doped nickel oxide colloidal nanocrystals (Cu x Ni 1-x O nanocrystal)

[0133] 1) Synthesis of nickel oxide nanocrystals:

[0134] The synthesis of nickel oxide nanocrystals is carried out on the Schlenk device, specifically as follows: 0.4mmol of Ni(iBu) 2 , 0.2mmol of sodium stearate, 3mmol of trioctylamine and 5mL of diphenyl ether were placed in a 25mL round-bottomed flask; argon gas was passed through the flask for 10 minutes, then the temperature was raised, and vacuum was drawn at 100 and 120°C for 30 minutes respectively Re-introduce argon gas, directly raise the temperature of the re...

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Abstract

The invention discloses a copper ion-doped nickel oxide colloidal nano-crystal preparation method and a product thereof, and applications of the copper ion-doped nickel oxide colloidal nano-crystal. The preparation method comprises: preparing a nickel oxide nano-crystal solution by using nickel carboxylate as a precursor; heating a copper precursor and a non-coordination organic solvent under an inert protective atmosphere to a temperature of 60-200 DEG C; and injecting the copper precursor and the non-coordination organic solvent into the nickel oxide nano-crystal solution with a temperature of 60-200 DEF C, and carrying out thermal insulation for 20 min-6 h, and purifying to obtain a CuxNi1-xO colloidal nano-crystal, wherein the copper precursor is copper carboxylate or a carbon anion copper salt. According to the present invention, the crystallization process of the CuxNi1-xO colloidal nano-crystal is separated from the crystallization film forming process of the existing CuxNi1-xO film, and the crystallization process and the film forming process are independent from each other, such that the film can be prepared through the conventional film forming method, and the film annealing temperature can be significantly reduced to 50-200 DEG C so as to be compatible with the substrate having the low high-temperature resistance.

Description

technical field [0001] The invention relates to a semiconductor material, in particular to a method for preparing copper ion-doped nickel oxide colloidal nanocrystals, a product and an application thereof. Background technique [0002] Nickel oxide (nickel oxide) is a p-type wide bandgap semiconductor material with a valence band top at 5.4 electron volts (eV), which matches the valence band top (or HOMO) of active materials for various solution-process optoelectronic devices, It can be used as a hole-transporting material for solution-process optoelectronic devices, which has attracted extensive attention of researchers in recent years. However, compared with the nickel oxide film grown in vacuum equipment, the conductivity of the nickel oxide material prepared by the solution method still needs to be improved. [0003] The conductivity of the nickel oxide film can be improved by doping copper ions in the nickel oxide material. People such as Kim of Kitami Institute of Te...

Claims

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Application Information

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IPC IPC(8): C01G53/04B82Y30/00H01L33/14H01L31/032H01L29/24
CPCC01G53/003C01G53/04C01P2002/72C01P2002/84C01P2004/04C01P2004/64H01L29/24H01L31/0321H01L33/14
Inventor 金一政王欣梁骁勇
Owner ZHEJIANG UNIV
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