Method for preparing high-compact ITO target material through two-step sintering

Abstract

The invention discloses a method for preparing a high-compact ITO target material through two-step sintering. The method comprises the following steps: firstly manufacturing the raw material into a biscuit, keeping warm and degreasing under the air atmosphere, directly placing under the air atmosphere to warm to 800-1300 DEG C after the degreasing and keeping warm for 5-30 hours to perform the first step of pre-sintering; placing the pre-sintered green body on a sintering bearing plate, warming to 1500-1600 DEG C and keeping warm for 5-30 hours under the oxygen atmosphere so as to perform the second step of sintering; stopping introducing the oxygen 1-5 hours before finishing the sintering; and performing furnace cooling to obtain an ITO target sintering body. The pre-sintering is performed under the air atmosphere so that the sintering time of the oxygen atmosphere can be shortened, the production energy consumption is greatly lowered; the degreasing and the pre-sintering process are integrated so that the sintering total time is saved; the pre-sintering enables the particles in the green body to be further homogenized, the abnormal crystal grain growth is avoided, and the microscopic homogeneity of the target is improved, and the strength and the thermal shock resistance are improved; the prepared ITO target density reaches to 7.128g/cu.cm and more.

Description

technical field [0001] The invention relates to a method for preparing an ITO target material, in particular to a method for preparing a high-density ITO target material by a sintering method. Background technique [0002] ITO (Tin-doped Indium Oxide) target belongs to indium-tin composite oxide ceramics, which is often used as a magnetron sputtering target to prepare transparent conductive films on glass, plastic and other substrate materials for the production of flat panel display devices such as liquid crystal displays and touch screens . Currently published ITO target sintering methods include oxygen pressure sintering, pressureless sintering, SPS sintering, hot pressing sintering, hot isostatic pressing sintering, microwave sintering, etc. Most of the sintering technologies of ITO targets have one or more problems such as high sintering temperature, long sintering time, high powder processing requirements, difficult slurry preparation, adding sintering aids or requiri...

AI Technical Summary

Problems solved by technology

This method needs to control and adjust many parameters such as the specific surface area of ​​the nano-powder, the pH value of the slurry, and the viscosity, and the green body takes a long time to dry and degrease, which requires high pulping technology, is not easy to operate, has a low yield, and is prone to needles. Pore ​​defects, resulting in increased nodules during the coating process

[0007] CN103232234 A discloses a method for microwave doping sintering, in which additives such as ZnO and TiN are added, which will introduce more impurities, which will affect the coating performance of the target

Moreover, although the temperature of microwave sintering is low, microwave sintering leads to uneven internal microstructure, and deformation and cracking are prone to occur during the sintering process. Due to equipment limitations, the output is not as large as that of normal pressure sintering, and the equipment cost is high.