Graphene and preparation method thereof

A graphene and substrate technology, applied in the field of graphene preparation, can solve the problems of high cost and large gas consumption, and achieve the effects of smooth surface, low preparation cost and low gas consumption

Active Publication Date: 2017-09-22
BEIJING TUNGHSU CARBON ADVANCED MATERIALS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a kind of method for preparing graphene and the graphene prepared by this method in order to overcome the gas consumption that the technology that existing chemical vapor deposition method prepares graphene exists, the problem that cost is high, by the present invention In the method for preparing graphene provided, there is no need to use argon and other carriers in the whole process, only by adjusting the heating rate of the substrate, annealing time, the flow rate and ratio of organic carbon source and hydrogen gas, and the growth time and cooling rate of graphene , the single-layer graphene film with flat surface, small square resistance and high light transmittance can be prepared

Method used

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  • Graphene and preparation method thereof

Examples

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Effect test

Embodiment 1

[0060] The 25 μm thick double-sided polished rolled copper foil pretreated by 2mol / L ammonium persulfate solution was rinsed with deionized water, anhydrous isopropanol, and anhydrous ethanol in sequence, dried with nitrogen, and then placed in a CVD furnace for growth. First use methane and hydrogen 50sccm to purge the furnace chamber respectively, then close the gas, vacuum the furnace chamber to below 1Pa, feed 50sccm hydrogen gas, and maintain the pressure at 36Pa; within 25 minutes, the surface temperature of the copper foil is raised to 700°C, and the temperature was raised to 1000°C over 40 minutes. Turn off the hydrogen, anneal at a high temperature and constant temperature for 30 minutes, and then pass in methane and hydrogen at the same time. The feed flow rate of methane was adjusted to be 7 sccm, and the hydrogen gas was 50 sccm for 30 minutes, and the pressure in the quartz tube was kept at 100 Pa. Then turn on the external fan and water cooling, and when the fur...

Embodiment 2

[0063] The 25 μm thick double-sided polished rolled copper foil pretreated by 1mol / L ferric chloride solution was rinsed with deionized water, anhydrous isopropanol, and anhydrous ethanol in sequence, dried with nitrogen, and then placed in a CVD furnace for growth. First use methane and hydrogen 50sccm to purge the furnace cavity respectively, then close the gas, vacuumize the furnace cavity to below 1Pa, feed 40sccm hydrogen, and maintain the pressure at 32Pa; within 65 minutes, the surface temperature of the copper foil is raised to 1000°C. Turn off the hydrogen, anneal at a high temperature and constant temperature for 15 minutes, and then pass in methane and hydrogen at the same time. The flow rate of methane was adjusted to be 7 sccm, and the hydrogen gas was 20 sccm for 20 minutes, and the pressure in the quartz tube was kept at 60 Pa. Then turn off the methane and hydrogen, turn on the external fan and water cooling, and cool the substrate to room temperature at a coo...

Embodiment 3

[0066] The 25 μm thick double-sided polished rolled copper foil pretreated with 1mol / L acetone was rinsed with deionized water, anhydrous isopropanol, and anhydrous ethanol in sequence, dried with nitrogen, and placed in a CVD furnace for growth. First use methane and hydrogen 50sccm to purge the furnace chamber respectively, then close the gas, vacuum the furnace chamber to below 1Pa, feed 60sccm hydrogen gas, and maintain the pressure at 40Pa; within 30 minutes, the surface temperature of the copper foil is raised to 800°C, and the temperature was raised to 1000°C over 40 minutes. Turn off the hydrogen, anneal at a high temperature and constant temperature for 20 minutes, and then pass in methane and hydrogen at the same time. The feed flow rate of methane was adjusted to be 5 sccm, and the hydrogen gas was 50 sccm for 40 minutes, and the pressure inside the quartz tube was kept at 120 Pa. Then turn off the methane and hydrogen, turn on the external fan and water cooling, a...

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Abstract

The invention relates to the technical field of preparation of graphene, and discloses a method for preparing graphene. The method comprises the following steps of: (1) heating a substrate to growth temperature of the graphene and carrying out annealing processing; (2) filling an organic carbon source and hydrogen into a reaction system, and carrying out growth of the graphene on the surface of the substrate obtained in the step (1); (3) cooling the substrate obtained in the step (2), wherein in the step (1), a temperature rising rate of the heating is 10 to 100 DEG C per minute and time of the annealing is 1 to 60 minutes, in the step (2), a filling flow rate of the organic carbon source to the hydrogen is 1: (1 to 10), and in the step (3), a cooling rate of the cooling is 10 to 100 DEG C per minute. When the method provided by the invention is adopted to prepare the graphene, in the whole preparing process, carrier gas does not need to be used, gas consumption is low and conditions are mild and controllable. A single-layer graphene thin film can be prepared by the method provided by the invention, the surface of the obtained graphene is flat and has no obvious wrinkles, and the obtained graphene has an excellent electrical conductivity and optical property.

Description

technical field [0001] The invention relates to the technical field of graphene preparation, in particular to a method for preparing graphene and graphene prepared therefrom. Background technique [0002] Graphene is a two-dimensional honeycomb crystal structure formed by densely packing a single layer of carbon atoms, and is the basic structural unit for constructing other dimensional carbon materials (zero-dimensional fullerene, one-dimensional carbon nanotubes, and three-dimensional graphite). The unique crystal structure of graphene makes it have excellent electrical, thermal and mechanical properties, such as its electron mobility as high as 200,000 cm at room temperature 2 / V s, the thermal conductivity is as high as 5300W / m k, and it is expected to be widely used in the fields of multifunctional nanoelectronic devices, transparent conductive films, composite materials, catalytic materials, energy storage materials, field emission materials, gas sensors and gas storage...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/186
CPCC01B2204/02C01B2204/22C01P2002/82C01P2004/20C01P2004/64C01P2006/40C01P2006/60
Inventor 李青刘思桦李赫然王忠辉
Owner BEIJING TUNGHSU CARBON ADVANCED MATERIALS TECH CO LTD
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