A kind of preparation method of cu/zno photocatalyst

Abstract

The invention discloses a method for preparing a Cu / ZnO photocatalyst. The method comprises the following steps: mixing zinc powder and copper powder in a vacuum induction atomization pulverizing furnace, atomizing at the temperature of 900-1100 DEG C by using inert gases; adding atomized alloyed powder into a mineralizer, carrying out a hydrothermal reaction at the temperature of 120-220 DEG C for 8-20 hours; and washing and drying, to obtain the Cu / ZnO photocatalyst. The method disclosed by the invention is simple, general, easy to operate, short in reaction time and low in cost, the whole preparation process is green and environment-friendly, any toxic substance is avoided, any pollution problem does not exist, nano columnar hexagon ZnO is finally obtained and loaded at the periphery of copper, the dispersity is high, and the photocatalytic efficiency is high.

Description

technical field [0001] The invention relates to a method for preparing a Cu / ZnO photocatalyst, belonging to the field of photocatalytic material preparation. [0002] technical background [0003] Wastewater discharged by people in production and life will contain a large amount of refractory or toxic pollutants, causing serious pollution of water resources. Using semiconductor photocatalytic materials to treat sewage can directly use solar energy in the process of photocatalytic degradation, the cost is very low, the application range is wide and there is no secondary pollution. Semiconductor photocatalytic materials have very significant advantages in the field of wastewater treatment. Currently, the most common semiconductor photocatalytic materials include TiO 2 , ZnO, etc. Under certain conditions, the photocatalytic activity of ZnO is obviously stronger than that of TiO 2 , and at the same time, it absorbs a wider range of the solar spectrum and has a higher photon ...

AI Technical Summary

Problems solved by technology

[0004] The application prospect of ZnO as a photocatalytic material is very broad, but its photocatalytic activity is limited by two main defects: (1) ZnO material has a wide band gap, and usually can only better absorb ultraviolet light in the sunlight region. light area, and the absorption of visible light area is very weak, so the spectral absorption range is narrow, and the utilization rate of solar energy is not high

(2) The photogenerated carriers generated by the ZnO photocatalytic material after being stimulated by light are easy to couple, which reduces the photocatalytic activity

However, the cost of depositing noble metals on the surface is high. When too much noble metals are deposited on the surface of the catalyst, on the one hand, too much noble metals prevent the catalyst from absorbing light; Catalytic effect, poor control of deposition amount; metal ion doping light quantum efficiency is still not high and recovery is difficult, many mechanisms are not very clear and poor dispersion generally requires additional loads; surface photosensitization is through physical adsorption or chemical adsorption The method injects the photosensitizer into the semiconductor surface to reduce the bandgap, so that the response wavelength of the photocatalyst moves to the long-wave direction, expands the range of excitation wavelengths, and improves the photocatalytic efficiency. The main reason is to reduce the bandgap, but the currently used The sensitizer is not very effective in improving the photocatalytic effect; most of the modification of compound semiconductors requires roasting, which will reduce the activity of the catalyst, and it needs to be loaded to reduce agglomeration and improve dispersion

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