Preparation process of monocrystalline silicon for solar cell panel

A technology of solar cell and preparation process, applied in the field of solar energy, which can solve the problems affecting the photoelectric conversion efficiency of solar panels, short service life of monocrystalline silicon, poor crystal quality, etc., and achieve high photoelectric conversion efficiency, less internal defects and long service life long effect

Inactive Publication Date: 2017-10-20
界首市七曜新能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Compared with polycrystalline silicon, the preparation process of monocrystalline silicon is relatively complicated, and various dislocations, defects, and various impurities are prone to occur inside the crystal, and the crystal quality is poor during crystal growth, which in turn affects the performance of solar panels. Photoelectric conversion efficiency, while the single crystal silicon produced by the existing process has a short service life

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] A process for preparing monocrystalline silicon for solar cell panels, comprising the following steps:

[0023] (1) Feeding: After the monocrystalline silicon raw material is heated at a low temperature of 400°C, it is cleaned with deionized water, then dried and mixed with impurities and put into a quartz crucible. The type of impurities depends on the N or P type of the resistor. Can be boron, phosphorus, antimony or arsenic;

[0024] (2) Melting: After adding the monocrystalline silicon raw material into the quartz crucible, close the crystal growth furnace and pump it into a vacuum, then fill it with high-purity argon to maintain the pressure, then turn on the power supply of the graphite heater, heat it to 800°C, and put the long crystal The crystal furnace is evacuated, and the argon gas is filled into the crystal growth furnace again, heated to a melting temperature above 1450°C, and the monocrystalline silicon raw material is melted to obtain a monocrystalline s...

Embodiment 2

[0030] A process for preparing monocrystalline silicon for solar cell panels, comprising the following steps:

[0031] (1) Feeding: After the monocrystalline silicon raw material is heated at a low temperature of 450°C, it is cleaned with deionized water, then dried and mixed with impurities and put into a quartz crucible. The type of impurities depends on the N or P type of the resistor. Can be boron, phosphorus, antimony or arsenic;

[0032] (2) Melting: After adding the monocrystalline silicon raw material into the quartz crucible, close the crystal growth furnace and pump it into a vacuum, then fill it with high-purity argon to maintain the pressure, then turn on the power of the graphite heater, heat it to 850°C, and put the long crystal The crystal furnace is evacuated, and the argon gas is filled into the crystal growth furnace again, heated to a melting temperature above 1450°C, and the monocrystalline silicon raw material is melted to obtain a monocrystalline silicon ...

Embodiment 3

[0038] A process for preparing monocrystalline silicon for solar cell panels, comprising the following steps:

[0039] (1) Feeding: After the monocrystalline silicon raw material is heated at a low temperature of 500°C, it is cleaned with deionized water, then dried and mixed with impurities and put into a quartz crucible. The type of impurities depends on the N or P type of the resistor. Can be boron, phosphorus, antimony or arsenic;

[0040] (2) Melting: After adding the monocrystalline silicon raw material into the quartz crucible, close the crystal growth furnace and vacuumize it, then fill it with high-purity argon to maintain the pressure, then turn on the power supply of the graphite heater, heat it to 900°C, and put the long crystal The crystal furnace is evacuated, and the argon gas is filled into the crystal growth furnace again, heated to a melting temperature above 1450°C, and the monocrystalline silicon raw material is melted to obtain a monocrystalline silicon me...

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PUM

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Abstract

The invention relates to a preparation process of monocrystalline silicon for a solar cell panel. The preparation process comprises the steps: charging, fusion, necking-down growth, shouldering growth, isometric growth and tail growth. According to the preparation process, monocrystalline silicon raw materials are heated at a low temperature so as to release internal stress before being sent into a crystal growth furnace, so that the dislocation generated during the crystal growth is reduced, and the crystallization quality is improved; in a fusion process, the crystal growth furnace is heated to 800-900 DEG C and is vacuumized, and argon is introduced into the crystal growth furnace, so that on the one hand, the internal stress of the monocrystalline silicon raw materials is further released, on the other hand, bubbles and oxygen impurity in the monocrystalline silicon raw materials are removed through heating and are discharged out of the crystal growth furnace together with argon, and the purity of the monocrystalline silicon raw materials is guaranteed; and monocrystalline silicon prepared by virtue of the preparation process has few internal defects, is high in crystallization quality, has relatively high photoelectric conversion efficiency when being used as the solar cell panel and simultaneously is long in service life.

Description

technical field [0001] The invention relates to the technical field of solar energy, in particular to a process for preparing monocrystalline silicon for solar panels. Background technique [0002] Monocrystalline silicon is a relatively active non-metallic element, an important part of crystalline materials, and is at the forefront of the development of new materials. Its main uses are as semiconductor materials and the use of solar photovoltaic power generation, heating and so on. Because solar energy has many advantages such as cleanliness, environmental protection, and convenience, solar energy utilization technology has made great progress in research and development, commercial production, and market development in the past 30 years, and has become one of the emerging industries with rapid and stable development in the world. [0003] From the current development process of international solar cells, it can be seen that its development trend is monocrystalline silicon...

Claims

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Application Information

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IPC IPC(8): C30B15/00C30B29/06
CPCC30B15/00C30B29/06
Inventor 李顺利
Owner 界首市七曜新能源有限公司
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