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A kind of preparation method of zinc oxide composite semiconductor material

A compound semiconductor and zinc oxide technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of high recombination rate of electrons and holes and poor adsorption of pollutants, so as to promote recombination, improve adsorption efficiency, The effect of enhancing toughness and strength

Active Publication Date: 2020-10-13
尚妙根
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is to provide a method for preparing a zinc oxide compound semiconductor material in view of the high recombination rate of electrons and holes generated by the photolysis of titanium dioxide and the poor adsorption of pollutants

Method used

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  • A kind of preparation method of zinc oxide composite semiconductor material

Examples

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example 1

[0021] Take the discarded pyrite, place the pyrite in a beaker, add the same mass of hydrochloric acid with a concentration of 0.3mol / L to modify the pyrite, and filter to obtain the modified pyrite; take the modified pyrite , dried naturally, then placed in a ball mill jar, ball milled for 2 hours at a speed of 200r / min, and passed through a 150-mesh sieve to obtain pyrite powder; in parts by weight, 2 parts of zinc oxide powder, 10 parts of hexadecane Trimethylammonium chloride and 30 parts of deionized water were placed in a conical flask, and ultrasonically dispersed at 200W for 15 minutes to obtain a white suspension; according to a mass ratio of 1:20, pyrite powder was added to the white suspension solution, place the Erlenmeyer flask on a magnetic stirrer, and stir evenly at a speed of 200r / min for 30min; take 300mg of dopamine, dissolve dopamine in 100mL of Tris-HCl buffer solution with a pH value of 8.5, and prepare 3mg / mL dopamine hydrochloride solution; take the dop...

example 2

[0023] Take the discarded pyrite, place the pyrite in a beaker, add the same mass of hydrochloric acid with a concentration of 0.3mol / L to modify the pyrite, and filter to obtain the modified pyrite; take the modified pyrite , dried naturally, then placed in a ball mill jar, ball milled for 2.5 hours at a speed of 250r / min, and passed through a 150-mesh sieve to obtain pyrite powder; in parts by weight, 2 parts of zinc oxide powder, 10 parts of sixteen Alkyltrimethylammonium chloride and 45 parts of deionized water were placed in a conical flask, and ultrasonically dispersed at 250W for 17 minutes to obtain a white suspension; add pyrite powder to the white suspension at a mass ratio of 1:20 In the turbid liquid, place the Erlenmeyer flask on a magnetic stirrer, and stir evenly for 35 minutes at a speed of 220r / min; take 300mg of dopamine, dissolve dopamine in 100mL of Tris-HCl buffer solution with a pH value of 8.5, and prepare 3mg / min mL of dopamine hydrochloride solution; t...

example 3

[0025] Take the discarded pyrite, place the pyrite in a beaker, add the same mass of hydrochloric acid with a concentration of 0.3mol / L to modify the pyrite, and filter to obtain the modified pyrite; take the modified pyrite , dried naturally, then placed in a ball mill jar, ball milled for 3 hours at a speed of 300r / min, and passed through a 150-mesh sieve to obtain pyrite powder; in parts by weight, 4 parts of zinc oxide powder, 20 parts of hexadecane Trimethyl ammonium chloride and 60 parts of deionized water were placed in a conical flask, and ultrasonically dispersed at 300W for 20 minutes to form a uniform white suspension; according to the mass ratio of 1:20, the pyrite powder was added to the white In the suspension, place the Erlenmeyer flask on a magnetic stirrer and stir evenly at a speed of 250r / min for 40min; take 300mg of dopamine, dissolve dopamine in 100mL of Tris-HCl buffer with a pH value of 8.5, and prepare 3mg / mL dopamine hydrochloride solution; take the d...

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Abstract

A method for preparing a zinc oxide composite semiconductor material is disclosed. Abandoned pyrite slag is taken and is placed into a beaker, adding dilute hydrochloric acid with a same weight into the beaker to modify the pyrite slag, and modified pyrite slag is obtained after filtering. The modified pyrite slag is taken, the modified pyrite slag is dried and then is placed into a ball mill tank, and pyrite powder is obtained through ball milling and sieving. Zinc oxide powder, cetyltrimethylammonium chloride and deionized water are taken by weight and are placed into a conical flask, and awhite suspension liquid is formed under ultrasound dispersion. The pyrite powder is taken and added into the white suspension liquid, and the conical flask is placed on a magnetic stirrer for stirring. Dopamine is taken and dissolved into a Tris-HCl buffer solution, and a dopamine hydrochloride solution is prepared. The dopamine hydrochloride solution is taken, and a dopamine hydrochloride suspension liquid is poured into the dopamine hydrochloride solution, followed by standing at room temperature. The filtering is carried out, a product is washed with distilled water and then is placed intoan oven to be baked, then the product is subjected to standing and cooled to the room temperature, and the zinc oxide composite semiconductor material is obtained.

Description

technical field [0001] The invention relates to a preparation method of a zinc oxide composite semiconductor material, belonging to the technical field of composite materials. Background technique [0002] A semiconductor is a material with controllable conductivity, between a conductor and an insulator. According to chemical composition, semiconductors can be divided into elemental semiconductors and compound semiconductors. Elemental semiconductors include germanium, silicon and selenium, etc. Compound semiconductors are generally group (Ⅲ and Ⅴ) compounds (gallium arsenide, gallium phosphide, etc.), group (Ⅱ and Ⅵ) compounds (sulfide, zinc oxide, etc.), ( manganese, chromium, iron, copper) oxides, etc. In addition, there are amorphous glass semiconductors, organic semiconductors, etc. Among the many semiconductor materials, inorganic compound semiconductor materials are also widely used, and the common ones are: ZnS, CdS, ZnO, SnO 2 , CdSe and TiO 2 etc. Today, vari...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
Inventor 赵宝史玉兰
Owner 尚妙根