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A kind of preparation method of nano aluminum oxide thin film

A nano-alumina and thin-film technology, which is applied to the preparation of aluminum hydroxide, chemical instruments and methods, aluminum compounds, etc., can solve the problems of high reaction temperature and complicated process, and achieve low reaction temperature, simple process, and rich surface morphology Effect

Active Publication Date: 2019-07-23
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing a nano-alumina film, which solves the problems of high reaction temperature and complicated process in the preparation process of the existing aluminum oxide film

Method used

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  • A kind of preparation method of nano aluminum oxide thin film
  • A kind of preparation method of nano aluminum oxide thin film
  • A kind of preparation method of nano aluminum oxide thin film

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preparation example Construction

[0032] A kind of preparation method of nano aluminum oxide thin film of the present invention, specifically implement according to the following steps:

[0033] Step 1. Dissolve aluminum nitrate and urea in deionized water, add the cleaned silicon chip, condense and reflux in a water bath, then take out the silicon chip, and after drying, there is a layer of Al(OH) with a diffraction spectrum on the surface of the silicon chip. ) 3 thermal dehydration film;

[0034] The size of the silicon chip is preferably 5mm × 5mm, and the silicon chip will be cleaned before use. The cleaning process is: the silicon chip will be put into the Piranha solution first, and then boiled in an oil bath at 100°C to 110°C for 11h to 13h ( Seal the mouth of the container with aluminum foil during cooking to prevent the solution from being too hot to splash out), and finally soak and clean the silicon wafer with ethanol;

[0035] Piranha (piranha) solution is composed of concentrated sulfuric acid ...

Embodiment 1

[0050] Put a 5mm×5mm silicon chip into Piranha solution (constituted by mixing concentrated sulfuric acid and hydrogen peroxide at a volume ratio of 7:3), boil it in an oil bath at 100°C for 11 hours, and finally soak and clean the silicon chip with ethanol spare;

[0051] Dissolve aluminum nitrate and urea in deionized water and add to the cleaned silicon wafer. The mass ratio of aluminum nitrate to urea is 3.55:1; Ionized water; condensed and refluxed at 80°C for 2 hours in a water bath, during which the stirring speed was controlled at 25r / min; the silicon wafer was taken out and placed in a 100°C drying oven to heat and dry for 1 hour, and there was a layer of Al with a diffraction spectrum on the surface of the silicon wafer ( Oh) 3 thermal dehydration film;

[0052]Put the above treated silicon wafers into a polytetrafluoroethylene hydrothermal reaction kettle, add deionized water, wherein the mass ratio of deionized water to silicon wafers is 0.5:1, and conduct hydrot...

Embodiment 2

[0056] Put a 5mm×5mm silicon wafer into Piranha solution (concentrated sulfuric acid and hydrogen peroxide mixed at a volume ratio of 7:3), boil in an oil bath at 105°C for 11.5 hours, and finally soak the silicon wafer in ethanol, cleaning spare;

[0057] Dissolve aluminum nitrate and urea in deionized water and add to the cleaned silicon wafer. The mass ratio of aluminum nitrate to urea is 3.56:1; the standard for adding deionized water is: for every gram of the mixture of aluminum nitrate and urea, add 10.5ml Deionized water; condensed and refluxed at 82°C for 2.5 hours in a water bath, with a stirring speed of 15r / min, took out the silicon wafer and placed it in a drying oven at 100°C for 65 minutes, and there was a layer of Al(OH) with a diffraction spectrum on the surface of the silicon wafer ) 3 Thermal dehydration film;

[0058] Put the above-mentioned treated silicon wafers into a polytetrafluoroethylene hydrothermal reaction kettle, add deionized water, and the mas...

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Abstract

The invention discloses a preparation method of a nano aluminum oxide film. The preparation method specifically comprises the following steps: step 1, dissolving aluminum nitrate and urea in deionizedwater, adding a cleaned silicon chip, performing condensing and refluxing under a water bath condition, taking out the silicon chip, and performing drying to obtain a layer of Al(OH)3 thermal dehydration film with a diffraction spectrum on the surface of the silicon chip; step 2, putting the silicon chip treated in the step 1 into a polytetrafluoroethylene hydrothermal reaction kettle, adding deionized water, and carrying out a hydrothermal reaction; and step 3, after the step 2 is completed, cooling a product in the polytetrafluoroethylene hydrothermal reaction kettle to the room temperatureand drying the product to form a layer of crack-free nano aluminum oxide film on the silicon chip. The preparation method of the nano aluminum oxide film, disclosed by the invention, solves the problems that the reaction temperature is too high and the process is complex in a preparation process of an existing aluminum oxide film.

Description

technical field [0001] The invention belongs to the technical field of solid film preparation, and in particular relates to a preparation method of a nano-alumina film. Background technique [0002] Nano-aluminum oxide film has the characteristics of biocompatibility, high mechanical strength, wear resistance, corrosion resistance, high dielectric constant, heat resistance and high light transmittance, and has been widely used in food packaging, electronic Devices, biomedical implants and mechanical coatings and many other industries. [0003] At present, there are many methods for preparing aluminum oxide thin films, such as: electron beam evaporation, chemical vapor deposition, atomic vapor deposition, magnetron sputtering, anodic oxidation, and sol-gel method. Among them, the sol-gel method, as an important method for synthesizing inorganic compounds or inorganic materials under low temperature or mild conditions, occupies an important position in soft chemical synthesis...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01F7/34C01F7/44
CPCC01F7/34C01F7/447C01P2002/72C01P2002/80C01P2004/03
Inventor 方长青蒲梦园周星朱怡同李欢李航
Owner XIAN UNIV OF TECH
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