Preparation method of a highly sensitive zno/aln core-sheath nanorod array ultraviolet detector

Abstract

The invention discloses a ZnO / AlN core sheath nanorod array ultraviolet detector with high sensitivity, and a preparation method of the same. The ZnO / AlN core sheath nanorod array ultraviolet detectorwith high sensitivity includes a sapphire substrate, a ZnO nanorod array, AlN sheath films and metal electrodes. The preparation method of the ZnO / AlN core sheath nanorod array ultraviolet detector with high sensitivity includes the steps: growing a ZnO nanorod array on the sapphire substrate; by means of a magnetron sputtering method, sputtering AlN sheath films with different thickness on the ZnO nanorod; and by means of the sputtering method or electron beam vapor plating vapor plating, respectively preparing metal electrodes with ohmic contact at two ends of the ZnO / AlN core sheath nanorod array to form a complete device. By means of the simple magnetron sputtering method, the preparation method of the ZnO / AlN core sheath nanorod array ultraviolet detector with high sensitivity can control the sputtering time and grow AlN sheath films with different thickness and smooth surface on the ZnO nanorod; the prepared ZnO / AlN core sheath optical detector has better ultraviolet response, and the light-to-dark-currents ratio is 5.5*103 under 360nm ultraviolet irradiation and 5V voltage, so that one order of magnitude is improved; and at the same time, the preparation method of the ZnO / AlN core sheath nanorod array ultraviolet detector with high sensitivity has relatively quicker response and recovery time, respectively 0.883 and 0.956s.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a method for preparing a highly sensitive ZnO / AlN core-sheath nanorod array ultraviolet light detector. Background technique [0002] Ultraviolet photodetectors are widely used, and have excellent prospects in the fields of optical engineering, space science, biomedicine, water purification, flame detection, and optoelectronic devices. At present, the main ultraviolet detectors used are ultraviolet vacuum tubes, photomultiplier tubes, etc., but such devices generally have disadvantages such as complex structures, bulky volume, and high power consumption. Ultraviolet photodetectors based on wide-bandgap semiconductor materials have gradually attracted attention due to their advantages such as small size, simple process, no response to visible light, and room temperature operation. Zinc oxide (ZnO) material is a group II-IV compound with a direct wide band ga...

AI Technical Summary

Problems solved by technology

However, since there are often many surface states and defects in ZnO nanomaterials, it is easy to form trap centers to capture photogenerated carriers. For most ultraviolet photodetectors, ZnO nanorods must be exposed to air during testing, so The surface of nanorods will inevitably have water and oxygen adsorption, which will affect the performance of the detector.

This greatly limits the photoresponse speed and reduces the detection sensitivity

Images