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Preparation method of quantum-dot light emitting diode device in which noble-metal/silicon-dioxide composite particles and semiconductor quantum dots are mixed

A quantum dot light-emitting and composite particle technology, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electric solid-state devices, etc., can solve problems that are difficult to meet, achieve low production cost, simple preparation process, and improve carrier recombination utilization efficiency effect

Inactive Publication Date: 2018-06-29
FUZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the former, currently limited by the characteristics of the quantum dot luminescent material itself, it is difficult to further increase the quantum yield of the quantum dot luminescent material, and it is necessary to find a new breakthrough
With the improvement of people's requirements for image quality and picture quality, higher requirements are put forward for quantum dot light-emitting diodes. It is difficult to meet the requirements of today's information society to produce high-quality, high-quality Demand for Quantum Dot Electroluminescent Devices for Displaying Images of Quality

Method used

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  • Preparation method of quantum-dot light emitting diode device in which noble-metal/silicon-dioxide composite particles and semiconductor quantum dots are mixed
  • Preparation method of quantum-dot light emitting diode device in which noble-metal/silicon-dioxide composite particles and semiconductor quantum dots are mixed
  • Preparation method of quantum-dot light emitting diode device in which noble-metal/silicon-dioxide composite particles and semiconductor quantum dots are mixed

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] (1) Weigh 0.049g of CuI and 0.292g of indium acetate respectively, take 10ml of ODE with a graduated cylinder and add them to the three-necked flask in turn, first blow at 500rpm with nitrogen for 10min, then heat to 120°C, keep After 30 minutes, 6ml of DDT was injected, heated to 230°C (8 minutes), and timed at 230°C for 5 minutes.

[0038] (2) Take 1.467g of zinc acetate, 8ml of OA and 4ml of ODE and heat them to 190°C for 30min until completely dissolved to form a transparent solution. The precursor solution of Zn can be obtained;

[0039] (3) The precursor of Zn was injected into the precursors of CuI and indium acetate at a rate of 1ml / min, and then the temperature was raised to 240°C and kept for 1h. Then remove from heat and cool to room temperature. The methanol solution is injected into the mixed solution to obtain the corresponding nanocrystal precipitation, and after centrifugation and washing, the obtained CuInS / ZnS semiconductor quantum dots are dispersed...

Embodiment 2

[0048] (1) Weigh 0.1534g of CuI powder and 0.9332g of indium acetate powder, take 2ml of DDT, 1ml of OA and 20ml of ODE, degas under argon for 20min, then heat to 120°C (keep for 30min) and then Heat to 230°C for 15 minutes.

[0049] (2) Heat 1.317g of zinc acetate dihydrate, 4ml of oleylamine and 12ml of ODE to 110°C for 30min until completely dissolved to form a transparent solution. The precursor solution of Zn can be obtained;

[0050] (3) The precursor of Zn was injected into the precursors of CuI and indium acetate at a rate of 1ml / min, and then the temperature was raised to 240°C and kept for 3h. Then remove from heat and cool to room temperature. The ethanol solution is injected into the mixed solution to obtain the corresponding nanocrystal precipitation, and after centrifugation and washing, the obtained CuInS / ZnS semiconductor quantum dots are dispersed into the chloroform or toluene solution.

[0051] (4) Measure 100ml of chloroauric acid (0.01wt%) with a measur...

Embodiment 3

[0059] (1) Weigh 0.024g of CuI powder and 0.146g of indium acetate powder, take 5ml of ODE, first degas under argon for 20min, then heat to 120°C (hold for 30min), then heat to 230°C for 5min.

[0060] (2) Heat 0.878g of zinc acetate dihydrate, 4ml of oleic acid and 2ml of ODE to 160°C for 30min until completely dissolved to form a transparent solution. The precursor solution of Zn can be obtained;

[0061] (3) The precursor of Zn was injected into the precursors of CuI and indium acetate at a rate of 1ml / min, and then the temperature was raised to 230°C and kept for 3h. Then remove from heat and cool to room temperature. The ethanol solution is injected into the mixed solution to obtain the corresponding nanocrystal precipitation, and after centrifugation and washing, the obtained CuInS / ZnS semiconductor quantum dots are dispersed into the chloroform or toluene solution.

[0062] (4) Measure 100ml of chloroauric acid (0.01wt%) with a measuring cylinder and add it into a 500...

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Abstract

The invention relates to a preparation method of a quantum-dot light emitting diode device in which noble-metal / silicon-dioxide composite particles and semiconductor quantum dots are mixed. A simple spin-coating and film-forming technology is adopted to conduct spin coating on a hole injection layer PEDOT:PSS, a hole transmission layer, a noble metal / SiO2 composite particle-semiconductor quantum dot mixed quantum dot layer and an electronic transmission layer separately on a patterned ITO glass substrate; then, electrodes are subjected to vapor deposition through magnetron sputtering, a package technology is conducted, and finally, the quantum-dot light emitting diode device in which the noble-metal / silicon-dioxide composite particles and the semiconductor quantum dots are mixed is prepared. By adopting a metal plasmon enhancement effect, the electric field intensity of the periphery of a semiconductor is improved, and therefore the utilization efficiency of carrier recombination in anelectroluminescence layer is effectively improved, so that the electroluminescence intensity and efficiency of the semiconductor quantum dots are dramatically improved.

Description

technical field [0001] The invention belongs to the field of optoelectronic materials and devices, in particular to a noble metal / SiO 2 A method for preparing a quantum dot light-emitting diode device mixed with composite particles and semiconductor quantum dots. Background technique [0002] The 21st century is an information society. With the development of science and technology and the progress of society, people's requirements for the quality of information exchange and delivery are increasing day by day. Display devices are the main carrier and material basis for information exchange and transmission, and many scientists in the field of optoelectronic research focus on it. Quantum dot electroluminescent devices, as the most likely to replace LCD as the next generation of mainstream display devices, play a vital role in the fields of information exchange and transmission. However, up to now, quantum dot light-emitting diodes basically use simple semiconductor quantum ...

Claims

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Application Information

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IPC IPC(8): H01L51/56H01L51/50
CPCH10K71/12H10K50/115H10K71/00
Inventor 杨尊先郭太良赵志伟阮玉帅叶冰清胡海龙陈恩果陈耿旭李福山赖寿强
Owner FUZHOU UNIVERSITY
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