Method for rapid preparation of gold nanocolumns
A gold nanocolumn and gold preparation technology, which is applied in metal material coating process, coating, liquid chemical plating, etc., can solve the problems of harsh experimental conditions, cumbersome steps, complicated process, etc., and achieve simple operation and simple process , The effect of the simple preparation process
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Embodiment 1
[0033] See attached figure 1 to attach Image 6 , the method for rapidly preparing gold nanocolumns of the present invention, comprises the following steps:
[0034] The method for rapidly preparing gold nanocolumns of the present invention comprises the following steps:
[0035] Step 1: cleaning the Si wafer, and plating gold on the surface of the Si wafer;
[0036] Place the Si sheet in acetone, absolute ethanol, and deionized water for ultrasonic cleaning, wash the earballs and blow dry, first coat a layer of chromium with a thickness of 5 nm, and then plate a layer of gold with a thickness of about 60 nm;
[0037] Step 2: using electron beam exposure technology or laser interference lithography technology to prepare nanohole arrays with different diameters on the gold-plated Si wafer;
[0038] Step 3: preparing gold nanocolumns;
[0039] A, the gold-plated Si sheet that has nanohole array in the step 2 is fixed in the beaker;
[0040] b. Inject chloroauric acid soluti...
Embodiment 2
[0052] See attached Figure 7 , the method for rapidly preparing gold nanocolumns of the present invention, comprises the following steps:
[0053] Step 1: Clean the Si wafer, and plate gold on the surface of the Si wafer; place the Si wafer in acetone, absolute ethanol, and deionized water for ultrasonic cleaning, wash the ear ball and dry it, first coat a layer of chromium with a thickness of 5nm, and then plate a The layer thickness is about 60 nm of gold.
[0054] Step 2: Prepare nanohole arrays with different diameters by electron beam exposure technology;
[0055]a. Spin-coat electronic resist on the gold-plated Si wafer, and then pre-bake;
[0056] b. Use electron beam exposure equipment to expose the electron resist, and obtain nanopore arrays with different diameters after developing;
[0057] Use the DesignCAD21 software on the electron beam exposure equipment to draw multiple array patterns with different diameters, and generate run file files; the acceleration v...
Embodiment 3
[0064] The difference between this embodiment and the second embodiment is that in step 2, the specific operation steps for preparing nanohole arrays with different diameters by laser interference lithography are as follows:
[0065] a. Spin-coat AR-P3740 UV photoresist with a ratio of 1:1 to the thinner AR 300-12 on the gold-plated Si wafer at a rate of 2000r / min, the time is 1min, the thickness of the photoresist is 600nm, and then Pre-bake on a hot plate at 100°C for 1min;
[0066] b. Use a three-beam laser interference system to expose the photoresist;
[0067] Use a high-power solid-state laser with a wavelength of 355nm, a high-reflection mirror, a beam splitter, a half-wave plate and a polarizer to build a three-beam laser interference system, and expose on the photoresist. The spatial angles of the three beams of coherent light are 0° respectively. , 120°, 240°; the polarization angles are 0°, 90°, and 90° respectively, and the incident angles of the three coherent be...
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Abstract
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