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A kind of tizn alloy film and its preparation method and application

A technology of alloy film and dielectric film is applied in the field of functional film preparation, which can solve the problems of waste pollution, high cost, and complicated methods.

Active Publication Date: 2020-04-24
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method adopts chemical method to prepare zinc oxide nanocolumn array, and method is cumbersome, produces waste pollution, and cost is high, is not suitable for the preparation of TiZn alloy film product and titanium-doped zinc oxide film

Method used

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  • A kind of tizn alloy film and its preparation method and application
  • A kind of tizn alloy film and its preparation method and application
  • A kind of tizn alloy film and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0081] The present embodiment provides a kind of preparation method of TiZn alloy film, and its specific method is:

[0082] (1) Place the cleaned n-Si (100) substrate on the arched workpiece frame of the electron beam evaporation equipment, place the magnesium fluoride film material with a purity of 99.9% in a graphite crucible as an evaporation source, and the substrate temperature is 100 ℃, the background vacuum is 3×10 - 6 torr, high voltage 10Kv, beam current 35mA, deposition rate The thickness of the magnesium fluoride dielectric film is 100nm, and the deposition rate and film thickness are monitored online in real time by a quartz crystal film thickness meter;

[0083] (2) Place the substrate prepared in step (1) on the substrate stage of the magnetron sputtering system, use the ultra-pure zinc target with a purity of 99.99% and the ultra-pure titanium target with a purity of 99.99% as the sputtering source, and use ultra-pure argon gas As the working gas to prepare...

Embodiment 2

[0090] This embodiment provides a kind of preparation method of TiZn alloy film, and its specific method refers to embodiment 1, difference is:

[0091] In step (1), the thickness of the magnesium fluoride dielectric film is 150nm; in step (2), the radio frequency power of the titanium target is 80w.

[0092] The TiZn alloy film prepared in this example is composed of nano-column structure, the diameter of the nano-column is about 40nm, the height of the nano-column is about 75nm, and the spacing of the nano-column is about 14nm. The atomic ratio of Ti and Zn is shown in Table 1. The TiZn alloy film prepared in this embodiment has super strong electric field coupling effect.

[0093] Fig. 4 (a) is the scanning electron microscope surface topography figure of the TiZn alloy film sample prepared in this embodiment, marked the diameter of the nanocolumn on some positions in this sample among the figure, as can be seen from this figure, this embodiment The diameter of the nanocol...

Embodiment 3

[0096] This embodiment provides a kind of preparation method of TiZn alloy film, and its specific method is with reference to embodiment 2, and difference is: in step (1), magnesium fluoride dielectric film thickness is 250nm, and dielectric film deposition rate is The deposition temperature is 150° C.; in step (2), the deposition time of the TiZn alloy film is 50 min (twice the deposition time of Example 2).

[0097] The TiZn alloy film prepared in this example is composed of nano-column structure, the diameter of the nano-column is about 50nm, the height of the nano-column is about 146nm, and the spacing of the nano-column is about 15nm. The atomic ratio of Ti and Zn is shown in Table 1. The TiZn alloy film prepared in this embodiment has super strong electric field coupling effect.

[0098] Figure 5 The scanning electron microscope sectional view of the TiZn alloy film sample prepared for this example, the thickness of the magnesium fluoride dielectric film marked in the...

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Abstract

The invention provides a TiZn alloy film and a preparation method and application thereof. The TiZn alloy film comprises a nano-rod structure. The preparation method of the TiZn alloy film includes the step that the TiZn alloy film is prepared on a dielectric film, namely the TiZn alloy film is prepared with an induction method. The lattice constant, in a certain direction, of the dielectric filmis approximate to the lattice constant in a certain direction of one material in an alloy material. The invention further provides a titanium-doped zinc oxide film prepared with the TiZn alloy film asthe raw material. A preparation method of the titanium-doped zinc oxide film includes the step of heating and annealing the TiZn alloy film in the oxidizing atmosphere to obtain the titanium-doped zinc oxide film. The titanium-doped zinc oxide film is applied to the optics. The TiZn alloy film is prepared with the pure physical method, so that pollution is avoided completely, the cost is low, repeatability is achieved, and the atom ratio of Ti to Zn in the TiZn alloy film and the size and height of the nano-rod structure can be flexibly adjusted.

Description

technical field [0001] The invention belongs to the technical field of preparation of functional thin films, and in particular relates to a TiZn alloy film, a preparation method and application thereof. Background technique [0002] Materials with ultrafine-pitch nanopillar arrays have attracted much attention due to their unique properties / performance for a wide range of applications. The study found that metal nanoarrays have nanometer-scale spacing and strong coupling of local electric fields, which can be used to prepare nano-lasers and surface-enhanced Raman substrates to improve the sensitivity of biochemical molecular detection. At present, the preparation of nanopillars mainly focuses on template method, etching method, self-assembly and hydrothermal method (seed layer). [0003] As a wide-band semiconductor material, zinc oxide has a bandgap width of 3.37ev at room temperature. It has the advantages of wide bandgap, high exciton binding energy, non-toxicity, easy a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/18C23C14/35C22C18/00C23C14/02C23C14/58
CPCC22C18/00C23C14/024C23C14/185C23C14/352C23C14/5853
Inventor 闫兰琴褚卫国
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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