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A high-mobility nitrogen-doped large single-crystal graphene film and its preparation method

A single crystal graphene and nitrogen doping technology, applied in the field of materials, can solve the problems of low graphite nitrogen content, small single crystal domain size, and large defect density

Active Publication Date: 2020-09-29
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the nitrogen-doped graphene film prepared by the traditional chemical vapor deposition method has two significant shortcomings: 1) nitrogen atoms are doped at a single point, and the graphite nitrogen content is low, and the defect density is large; 2) the size of the single crystal domain is relatively small , the grain boundary scattering is large; therefore, the preparation of high-mobility large single-crystal nitrogen-doped graphene by CVD can adjust its work function on the basis of maintaining the excellent electrical properties of graphene itself.

Method used

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  • A high-mobility nitrogen-doped large single-crystal graphene film and its preparation method
  • A high-mobility nitrogen-doped large single-crystal graphene film and its preparation method
  • A high-mobility nitrogen-doped large single-crystal graphene film and its preparation method

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Embodiment 1

[0079] Embodiment 1, preparation cluster graphite nitrogen-doped graphene

[0080] The CVD growth process of cluster graphite nitrogen-doped graphene in the present embodiment is as follows Figure 4 shown, where Figure 4 (a) is the temperature curve of the growth process, and the processing steps are marked on the curve, Figure 4 (b) Schematic illustration of the growth process, emphasizing the role of oxygen selective etching.

[0081] 1) Place copper foil (produced by Alfa Aesar, with a purity of 99.8%, and a thickness of 25 μm) in a phosphoric acid glycol solution for electrochemical polishing. The concentration of phosphoric acid is 85%, and the volume ratio of phosphoric acid and glycol is 3:1. The current density is maintained at 30A / m 2 ~100A / m 2 Between, the polishing time is about 30min. The polished copper foils were rinsed with deionized water and dried with nitrogen gas.

[0082] 2) Put the above-mentioned polished copper foil in a casing with magnetic con...

Embodiment 2

[0095] Embodiment 2, preparation cluster graphite nitrogen-doped graphene film

[0096] 1)-7) the steps are the same as in Example 1;

[0097] 8) repeat step 6) and step 7) four times;

[0098] 9) Use a magnet to drag the casing with copper foil out of the high-temperature zone of the tube furnace, and turn off the heating system of the tube furnace, lower the sample temperature to room temperature, turn off the acetonitrile and hydrogen, and end the growth.

[0099] 10) Take out the grown copper foil sample, and hang-coat a PMMA / ethyl lactate solution with a mass fraction of 4% on the surface of the sample at a speed of 2000rpm for 1min; dry the sample on a hot stage at 170°C; use A 90W air plasma was used to etch the reverse side of the sample for 5 min.

[0100] 11) Use a sodium persulfate solution with a concentration of 1M to etch the copper foil substrate at room temperature for 40 minutes to obtain a graphene sample supported by a PMMA film; after cleaning the sample ...

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Abstract

The invention discloses a high-mobility nitrogen-doped macro-monocrystal graphene film and a preparation method therefor. According to the nitrogen-doped macro-monocrystal graphene film, nitrogen atoms are doped in graphene crystal lattices in the form of graphite type nitrogen; a doped form of the nitrogen atoms is of clustered doping; and each clustered structure is formed by at least 3 nitrogenatoms and a carbon atom and is embedded in the graphene film. The preparation method for the nitrogen-doped macro-monocrystal graphene film comprises the following steps: growing a monocrystal graphene island on a growth substrate by a chemical vapor deposition method by adopting reductive gas and nitrogen-containing carbon source gas as a growth atmosphere; carrying out passivating treatment onthe monocrystal graphene island in an oxidizing atmosphere; and after the passivating treatment ends up, carrying out graphene regrowth by using the chemical vapor deposition method, thereby obtainingthe nitrogen-doped macro-monocrystal graphene film. The nitrogen-doped macro-monocrystal graphene film disclosed by the invention can be applied to the encapsulation of transparent conductive films,transparent electrodes, high-frequency electronic devices, luminescent devices, photovoltaic devices, photoelectric detection devices, electro-optical modulation devices, heat dissipating devices or hydrophobic devices.

Description

technical field [0001] The invention relates to a high-mobility nitrogen-doped large single-crystal graphene film and a preparation method thereof, belonging to the field of materials. Background technique [0002] Graphene is a carbon atom by sp 2 The single-layer or few-layer two-dimensional crystal material formed by hybridization has excellent electrical, optical and mechanical properties. Since its discovery, it has attracted extensive attention from the scientific and industrial circles. Because of the special arrangement of carbon atoms in graphene, its energy band structure presents a Dirac cone with linear dispersion, and the effective mass of carriers is zero, so it has extremely high electron and hole mobility, and gradually Become a strong competitor of silicon-based electronic devices. On the other hand, single-layer graphene has a light transmittance of 97.7%, coupled with its excellent electrical conductivity, it is an ideal material for a new generation of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/02C30B29/64C30B25/00C23C16/26C23C16/02
CPCC23C16/0209C23C16/0227C23C16/26C30B25/00C30B29/02C30B29/64
Inventor 刘忠范彭海琳林立孙禄钊张金灿
Owner PEKING UNIV