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Nano aramid/boron nitride heat-conduction thin film with low dielectric constant and preparation method thereof

A low-dielectric constant, heat-conducting thin film technology, applied in the field of electronic packaging materials, can solve the problems of thermal conductivity to be improved, the influence of the mechanical properties of the substrate, etc., to achieve outstanding thermal conductivity and low dielectric properties, increase the film-forming rate, improve The effect of thermal conductivity

Inactive Publication Date: 2019-05-07
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In recent years, adding high thermal conductivity filler particles to the polymer matrix to improve its thermal conductivity and expand its application field has become a research hotspot, such as adding aluminum nitride, boron nitride, etc. to silicone rubber, polyimide and other polymers, but when When the filling amount is large, the properties of the matrix, especially the mechanical properties, are significantly affected
The paper is prepared by simple blending of meta-aramid and boron nitride powder, and then dipped and modified by hot pressing to form a high thermal conductivity prepreg; the dielectric constant of the prepreg prepared by this method is still greater than 3.0, and the thermal conductivity still needs to be improved

Method used

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  • Nano aramid/boron nitride heat-conduction thin film with low dielectric constant and preparation method thereof
  • Nano aramid/boron nitride heat-conduction thin film with low dielectric constant and preparation method thereof
  • Nano aramid/boron nitride heat-conduction thin film with low dielectric constant and preparation method thereof

Examples

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Embodiment 1

[0049] A method for preparing a low dielectric constant nano-aramid / boron nitride thermal conductive film includes the following steps and process conditions:

[0050] 1) Preparation of nano-aramid fiber (ANFs) solution: Take 1g of 2-6mm long Kevlar fiber and place it in a 500ml narrow-mouthed bottle, add 1.5g potassium hydroxide, put it into the rotor, add 500ml dimethyl sulfoxide (DMSO) ), placed on a magnetic stirrer and stirred at room temperature for a week to obtain a bright dark red solution with a concentration of 2mg / ml;

[0051] 2) Preparation of hexagonal boron nitride nanosheets (BNNSs): Take 2g of hexagonal boron nitride powder with a particle size of 1~2um, wash and dry with acetone, put it in a 500ml narrow-mouthed bottle, add 500ml isopropanol, The initial concentration is 4mg / ml. Ultrasound for 6h, ultrasonic power of 80w, 10s / 3s intermittent ultrasonic mode, after standing for 24h, centrifugation at 3500rpm for 30min, transfer the centrifugal liquid, prepare the ...

Embodiment 2

[0060] A method for preparing a low dielectric constant nano-aramid / boron nitride thermal conductive film includes the following steps and process conditions:

[0061] 1) Preparation of nano-aramid fiber (ANFs) solution: Take 1g 2-6mm long Kevlar fiber and place it in a 500ml narrow-mouthed bottle, add 2.0g potassium hydroxide, put it into the rotor, add 100ml dimethyl sulfoxide (DMSO) ), place it on a magnetic stirrer and stir at room temperature for a week to obtain a bright dark red solution with a concentration of 10mg / ml;

[0062] 2) Preparation of hexagonal boron nitride nanosheets (BNNSs): Take 5g of 1~2um hexagonal boron nitride powder, wash and dry with acetone, put it in a 500ml narrow-mouthed bottle, add 500ml dimethyl sulfoxide, initial The concentration is 10mg / ml. Ultrasound for 16h, ultrasonic power of 100w, 15s / 5s intermittent ultrasonic mode, after standing for 24h, centrifugation at 5000rpm for 30min, transfer the centrifugal liquid, prepare the hexagonal boron n...

Embodiment 3

[0067] A preparation method of low dielectric constant nano-aramid / boron nitride thermal conductive film, including the following steps and process conditions:

[0068] 1) Preparation of nano-aramid fiber (ANFs) solution: Take 1g of 2-6mm long Kevlar fiber and place it in a 500ml narrow-mouthed bottle, add 4.0g sodium hydroxide, put it in the rotor, add 500ml dimethyl sulfoxide, set Stir on a magnetic stirrer at room temperature for a week to obtain a bright dark red solution with a concentration of 1mg / ml;

[0069] 2) Preparation of hexagonal boron nitride nanosheets (BNNSs): Take 2g of 1~2um hexagonal boron nitride powder, wash and dry with acetone, put it in a 500ml narrow-mouthed bottle, add 500ml N-methylpyrrolidone, the initial The concentration is 4mg / ml. Ultrasound for 24h, ultrasonic power of 120w, 8s / 5s intermittent ultrasonic mode, after standing for 24h, centrifugation at 4000rpm for 20min, transfer the centrifugal liquid, prepare the hexagonal boron nitride nanosheet ...

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Abstract

The invention discloses a nano aramid / boron nitride heat-conduction thin film with a low dielectric constant and a preparation method thereof. The preparation method comprises the following steps: firstly, uniformly mixing aramid fibers, strong alkali and dimethyl sulfoxide by stirring to prepare a nano aramid fiber solution; washing the hexagonal boron nitride powder by acetone, carrying out drying, then adding a polar organic solvent, and carrying out ultrasonic treatment to prepare hexagonal boron nitride nanosheets; dialyzing the nano aramid fiber solution in ultrapure water; then adding the hexagonal boron nitride nanosheet dispersion liquid, carrying out stirring, and then carrying out water-bath ultrasonic treatment to obtain a nano aramid boron nitride dispersion liquid; and carrying out vacuum suction filtration on the nano aramid boron nitride dispersion liquid, uncovering a film after the filtrate is dried, and carrying out vacuum drying and press polish to obtain the nano aramid / boron nitride heat-conduction thin film. The thermal conductivity of the film is 0.1906-0.5769 W / (m*K), the dielectric constant is smaller than 2.5, the tensile strength of the film exceeds 71.45 MPa, and requirements of high-frequency electronic communication elements are completely met.

Description

Technical field [0001] The invention relates to an electronic packaging material, in particular to a low dielectric constant nano aramid / boron nitride thermal conductive film and a preparation method thereof. The low dielectric constant nano aramid / boron nitride thermal conductive film prepared by the invention can be used for The packaging materials of LED and other miniature light-emitting parts achieve the effect of rapid heat dissipation and ensure its service life; it can also be used as a paper-based reinforcement material to be used in high-frequency and high-speed substrates to reduce signal attenuation to achieve high-frequency and high-speed communication. Background technique [0002] Miniaturization and multifunctionalization have become one of the main directions for the development of printed circuit boards and electronic packaging materials. In actual electrical and electronic applications, in addition to considering the low dielectric constant of dielectric materi...

Claims

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Application Information

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IPC IPC(8): C08J5/18C08L77/10C08K7/00C08K3/38
Inventor 刘德桃林美燕欧阳豪苏灵峰李映辉徐科
Owner SOUTH CHINA UNIV OF TECH
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