Preparation method and application of selenium-coated carbon nanotube/graphene
A technology for coating carbon and nanotubes, which is used in secondary battery manufacturing, final product manufacturing, sustainable manufacturing/processing, etc. It can solve problems such as uneven dispersion and disordered CNT orientation, and achieve difficult detachment and controllable morphology. , The effect of improving conductivity and energy density
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[0031] Such as figure 1 Shown, the preparation method of a kind of selenium-coated carbon nanotube / graphene that the present invention proposes comprises the following steps:
[0032] Step 1: Preparation of G film
[0033] Using metal foil as a template, G film is grown by CVD process. The growth process conditions are: carbon-containing precursor is the growth carbon source, the reaction temperature is 850-1100°C, the reaction time is 0.1-2h, and the flow rate of carbon-containing precursor is 0.1-150mL / min , the flow rate of argon gas is 50-500mL / min, the flow rate of hydrogen gas is 5-500mL / min;
[0034] Step 2: Growing CNTs on the G film
[0035] Immerse the G / metal foil obtained in step 1 into the solution containing the catalyst precursor, mount it and put it into a tube furnace under Ar / H 2 Heating to the growth temperature in a mixed atmosphere, using the CVD process to grow CNT in situ, the growth process conditions are: the carbon-containing precursor is the growt...
Embodiment 1
[0052] (1) Preparation of materials
[0053] Using copper foil as a template, G is grown by CVD process. The process conditions are: methane as carbon source, reaction temperature 950°C, methane 80mL / min, argon flow rate 300mL / min, hydrogen flow rate 400mL / min, and cool with the furnace after 20 minutes of reaction to room temperature.
[0054] The prepared G / copper foil was immersed in FeSO 4 ·7H 2 The catalyst precursor is loaded in the aqueous solution of O, then placed in a tube furnace, and CNTs are grown by CVD process. The process conditions are: ethanol is the carbon source, and the reaction temperature is 900 ° C. It is injected into the quartz tube by injecting the carbon source. In this process, the injection rate was 0.2mL / min, the flow rate of argon gas was 600mL / min, the flow rate of hydrogen gas was 100mL / min, and the CNT / G / copper foil was grown for 20min. The CNT length was about 2μm.
[0055] Put the prepared CNT / G copper foil into 2M FeCl 2 and 2M hydroch...
Embodiment 2
[0060] The method is the same as in Example 1, only the growth condition of growth G is changed.
[0061] Using copper foil as a template, G was grown by CVD process. The process conditions were: methane as carbon source, reaction temperature 950°C, methane 80mL / min, argon flow 300mL / min, hydrogen flow 400mL / min, and reaction time 10min. Rapidly cool down to 500°C at a cooling rate of 10°C / min and then cool down to room temperature with the furnace. Compared with Example 1, the G growth time in Example 2 is shorter, and the cooling rate is faster so that the prepared G film has a lower number of layers. With better crystallinity, the prepared Se / CNT / G has higher conductivity.
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