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A kind of Ag-doped SNSE semiconductor film and its electrochemical preparation method

A semiconductor and electrochemical technology, which is applied in the field of Ag-doped SnSe semiconductor film and its electrochemical preparation, can solve problems such as limitations, and achieve the effects of avoiding cracks and holes, maintaining long-term stability, and high conductivity

Active Publication Date: 2020-11-03
BEIJING UNIV OF CHEM TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, whether it is single crystal or polycrystalline SnSe as a thermoelectric material, the industrial application is limited.

Method used

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  • A kind of Ag-doped SNSE semiconductor film and its electrochemical preparation method
  • A kind of Ag-doped SNSE semiconductor film and its electrochemical preparation method
  • A kind of Ag-doped SNSE semiconductor film and its electrochemical preparation method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] (1) Preparation of electrodeposition solution: weigh 0.90g disodium edetate, 0.45g SnCl 2 2H 2 O, 0.13g Na 2 SeO 3 ·5H 2 O, AgNO 3 , Dissolve it in 200ml of deionized water after deoxygenation and stir evenly, adjust the pH to 2.6 with 0.1M dilute hydrochloric acid.

[0041] (2) Electrodeposition: use the solution prepared in step (1) as the electrolyte, the pretreated ITO glass as the working electrode, the saturated calomel electrode as the reference electrode, and the platinum sheet as the auxiliary electrode. Connect to the corresponding terminal button of the potentiostat, ensure that the distance between the working electrode and the platinum sheet is 3cm, and ensure that the temperature of the electrolyte is between 15°C and 40°C, and the deposition time is 20min-60min to obtain Ag-doped SnSe The pre-deposited film was tested with an Oxford INCA-Penta-FET-X3 X-ray energy dispersive spectrometer to test the chemical composition of the film. The results are sh...

Embodiment 2

[0044] (1) Preparation of electrodeposition solution: weigh 0.90g disodium edetate, 0.45g SnCl 2 2H 2 O, 0.13g Na 2 SeO 3 ·5H 2 O, AgNO 3 , the amount of urea to be added is 10mg / L, dissolved in 200ml of deionized water after deoxygenation and stirred evenly, and the pH is adjusted to 2.6 with 0.1M dilute hydrochloric acid.

[0045] (2) Electrodeposition: use the solution prepared in step (1) as the electrolyte, the pretreated ITO glass as the working electrode, the saturated calomel electrode as the reference electrode, and the platinum sheet as the auxiliary electrode. Connect to the corresponding terminal button of the potentiostat, ensure that the distance between the working electrode and the platinum sheet is 3cm, and ensure that the temperature of the electrolyte is between 15°C and 40°C, and the deposition time is 20min-60min to obtain Ag-doped SnSe The pre-deposited film was tested with an Oxford INCA-Penta-FET-X3 X-ray energy dispersive spectrometer to test the ...

Embodiment 3

[0048] (1) Preparation of electrodeposition solution: weigh 0.90g disodium edetate, 0.45g SnCl 2 2H 2 O, 0.13g Na 2 SeO 3 ·5H 2 O, AgNO 3 , The amount of sodium dodecylsulfonate added is 10mg / L, dissolved in 200ml of deionized water after deoxygenation and stirred evenly, and the pH is adjusted to 2.6 with 0.1M dilute hydrochloric acid.

[0049] (2) Electrodeposition: use the solution prepared in step (1) as the electrolyte, the pretreated ITO glass as the working electrode, the saturated calomel electrode as the reference electrode, and the platinum sheet as the auxiliary electrode. Connect to the corresponding terminal button of the potentiostat, ensure that the distance between the working electrode and the platinum sheet is 3cm, and ensure that the temperature of the electrolyte is between 15°C and 40°C, and the deposition time is 20min-60min to obtain Ag-doped SnSe The pre-deposited film was tested with an Oxford INCA-Penta-FET-X3 X-ray energy dispersive spectrometer...

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Abstract

The invention relates to a Ag-doped SnSe semiconductor film and an electrochemical preparation method thereof. The preparation method comprises the steps that silver nitrate, stannous chloride and sodium selenite are selected as a silver source, a tin source and a selenium source respectively, ethylene diamine tetraacetic acid is taken as a complexing agent, urea and sodium dodecyl sulfate are taken as additive agents for preparing electrolyte, electrolytic deposition is conducted at room temperature after the pH value of a plating solution is adjusted to 1.5-5, a Ag-doped SnSe pre-deposition film is obtained, then the SnSe pre-deposition film is annealed, and the Ag-doped SnSe semiconductor film is obtained. According to the method, the Ag-doped SnSe semiconductor film without an impurity phase can be prepared, the carrier concentration, the migration rate and the electrical conductivity of the film are high, and the thermoelectric properties of the film can be improved. The chemical components and the electrical transmission performance of the film can be regulated through the electrolyte components, a deposition technology and an annealing method, and the preparation method has the characteristics of being high in controllability and good in repeatability and is suitable for large-area preparation.

Description

technical field [0001] The invention belongs to the field of thermoelectric materials, and in particular relates to an Ag-doped SnSe semiconductor thin film and an electrochemical preparation method thereof. Background technique [0002] Thermoelectric materials can directly convert thermal energy into electrical energy, and have been extensively researched and applied in the fields of waste heat utilization, power generation devices, and temperature measurement. Early thermoelectric materials were mainly metal materials, but the limitations of metal materials are very obvious. Their Seebeck coefficients are low, but their thermal conductivity is often high. Material requirements. In the late 1950s, Abram Ioffe discovered that semiconductor materials had a significantly superior thermoelectric conversion effect compared to metal materials, so more and more researchers devoted themselves to the exploration of semiconductor thermoelectric materials. [0003] The thermoelectr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D9/04C25D3/02
CPCC25D3/02C25D9/04
Inventor 李志林王峰曹凯刘景军吉静张正平窦美玲宋夜
Owner BEIJING UNIV OF CHEM TECH