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Cu-doped SnSe semiconductor film and electrochemical preparation method thereof

A semiconductor and thin film technology, applied in the field of Cu-doped SnSe semiconductor thin film and its electrochemical preparation, can solve problems such as limitations, and achieve the effects of avoiding cracks and holes, high carrier concentration, and high conductivity

Active Publication Date: 2019-09-20
BEIJING UNIV OF CHEM TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, whether it is single crystal or polycrystalline SnSe as a thermoelectric material, the industrial application is limited.

Method used

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  • Cu-doped SnSe semiconductor film and electrochemical preparation method thereof
  • Cu-doped SnSe semiconductor film and electrochemical preparation method thereof
  • Cu-doped SnSe semiconductor film and electrochemical preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0040] (1) Preparation of electrodeposition solution: weigh 0.90g disodium edetate, 0.45g SnCl 2 2H 2 O, 0.13g Na 2 SeO 3 ·5H 2 O, CuCl 2 ·5H 2 O, dissolve it in 200ml of deionized water after deoxygenation and stir evenly, and adjust the pH to 2.6 with 0.1M dilute hydrochloric acid.

[0041] (2) Electrodeposition: use the solution prepared in step (1) as the electrolyte, the pretreated ITO glass as the working electrode, the saturated calomel electrode as the reference electrode, and the platinum sheet as the auxiliary electrode. Connect to the corresponding terminal button of the potentiostat, ensure that the distance between the working electrode and the platinum sheet is 3cm, and ensure that the temperature of the electrolyte is between 15°C and 40°C, and the deposition time is 20min-60min to obtain Cu-doped SnSe The pre-deposited film was tested with an Oxford INCA-Penta-FET-X3 X-ray energy dispersive spectrometer to test the chemical composition of the film. The re...

Embodiment 2

[0044] (1) Preparation of electrodeposition solution: weigh 0.90g disodium edetate, 0.45g SnCl 2 2H 2 O, 0.13g Na 2 SeO 3 ·5H 2 O, CuCl 2 ·5H 2 O, the amount of urea to be added is 10mg / L, dissolved in 200ml of deionized water after deoxygenation and stirred evenly, and the pH is adjusted to 2.6 with 0.1M dilute hydrochloric acid.

[0045] (2) Electrodeposition: use the solution prepared in step (1) as the electrolyte, the pretreated ITO glass as the working electrode, the saturated calomel electrode as the reference electrode, and the platinum sheet as the auxiliary electrode. Connect to the corresponding terminal button of the potentiostat, ensure that the distance between the working electrode and the platinum sheet is 3cm, and ensure that the temperature of the electrolyte is between 15°C and 40°C, and the deposition time is 20min-60min to obtain Cu-doped SnSe The pre-deposited film was tested with an Oxford INCA-Penta-FET-X3 X-ray energy dispersive spectrometer to t...

Embodiment 3

[0048] (1) Preparation of electrodeposition solution: weigh 0.90g disodium edetate, 0.45g SnCl 2 2H 2 O, 0.13g Na 2 SeO 3 ·5H 2 O, CuCl 2 ·5H 2 O, the amount of sodium dodecylsulfonate added is 10mg / L, dissolved in 200ml of deionized water after deoxygenation and stirred evenly, and the pH is adjusted to 2.6 with 0.1M dilute hydrochloric acid.

[0049] (2) Electrodeposition: use the solution prepared in step (1) as the electrolyte, the pretreated ITO glass as the working electrode, the saturated calomel electrode as the reference electrode, and the platinum sheet as the auxiliary electrode. Connect to the corresponding terminal button of the potentiostat, ensure that the distance between the working electrode and the platinum sheet is 3cm, and ensure that the temperature of the electrolyte is between 15°C and 40°C, and the deposition time is 20min-60min to obtain Cu-doped SnSe The pre-deposited film was tested with an Oxford INCA-Penta-FET-X3 X-ray energy dispersive spec...

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Abstract

The invention relates to a Cu-doped SnSe semiconductor film and an electrochemical preparation method thereof. Copper chloride, stannous chloride and sodium selenite are selected as copper, tin and selenium sources, ethylenediamine tetraacetic acid disodium salt serves as a complexing agent, and urea and sodium dodecyl sulfate serve as an additive to prepare electrolyte; after a pH value of a plating solution is adjusted to be 1.5-5, electro-deposition is performed at a room temperature to obtain a Cu-doped SnSe pre-deposited film; and then the SnSe pre-deposited film is subjected to annealing so that the Cu-doped SnSe semiconductor film can be obtained. Due to the method, the Cu-doped SnSe semiconductor film free of an impurity phase can be prepared, the carrier concentration, the migration rate and the conductivity of the film are high, and the thermoelectric performance of the Cu-doped SnSe semiconductor film can be improved easily. Due to the preparation method, chemical components and the electric transmission performance of the Cu-doped SnSe semiconductor film can be controlled through electrolyte components, a deposition process and an annealing method, the beneficial effects that controllability is high and repeatability is good are achieved, and the preparation method is applicable to large-area preparation.

Description

technical field [0001] The invention belongs to the field of thermoelectric materials, and in particular relates to a Cu-doped SnSe semiconductor thin film and an electrochemical preparation method thereof. Background technique [0002] Thermoelectric materials can directly convert thermal energy into electrical energy, and have been extensively researched and applied in the fields of waste heat utilization, power generation devices, and temperature measurement. Early thermoelectric materials were mainly metal materials, but the limitations of metal materials are very obvious. Their Seebeck coefficients are low, but their thermal conductivity is often high. Material requirements. In the late 1950s, Abram Ioffe discovered that semiconductor materials had a significantly superior thermoelectric conversion effect compared to metal materials, so more and more researchers devoted themselves to the exploration of semiconductor thermoelectric materials. [0003] The thermoelectri...

Claims

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Application Information

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IPC IPC(8): C25D9/04C30B28/04C30B29/46C30B33/02
CPCC25D9/04C30B28/04C30B29/46C30B33/02
Inventor 李志林王峰曹凯刘景军吉静张正平窦美玲宋夜
Owner BEIJING UNIV OF CHEM TECH