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Sulfur multi-element alloy target material and manufacturing method thereof

A multi-element alloy and manufacturing method technology, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problem of difficulty in controlling the microstructure, properties and defects of as-cast targets, the high brittleness of chalcogenide alloy materials, and the high brittleness of target materials. It is difficult to achieve high density and other problems, and achieve the effect of high brittleness, excellent microstructure and low oxygen content

Pending Publication Date: 2019-11-01
有研新材料股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The problem existing in the smelting method is that it is difficult to control the microstructure, properties and defects of the as-cast target material, and the material is brittle and easy to crack; while the powder metallurgy method has a more prominent problem that it is very easy to introduce impurities and absorb oxygen during the mechanical crushing process. The ground powder is usually irregular in shape, and the chalcogenide alloy material has high brittleness and high hardness, which is not conducive to subsequent densification and sintering, and it is difficult for the final target to achieve high density and low oxygen content

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] This example provides a method for preparing a low-oxygen germanium-arsenic-selenide-tellurium alloy target with a target size of Φ440×20mm, including the following steps:

[0016] (1) Raw material ingredients

[0017] Mix germanium Ge, arsenic As, selenium Se and tellurium Te with a chemical purity higher than 99.999% according to the following atomic percentages: germanium 10-30%; arsenic 20-40%; selenium 30-50%; tellurium 0-10%, After mixing, the sum of the atomic percentages is 100%, and the above-mentioned mixed material is packed into a high-purity quartz tube.

[0018] (2) Melting and annealing

[0019] Put the fused quartz tube into a swing furnace, slowly raise the temperature to 800-950°C, swing and melt for 12-30 hours, take it out and cool it, then keep it in the annealing furnace for 12 hours, and then slowly cool it down to room temperature, that is, the low oxygen high temperature is obtained. Pure germanium, arsenic, selenium and tellurium ingots, with...

Embodiment 2

[0027] This example provides a method for preparing a low-oxygen germanium arsenic selenium tellurium silicon alloy target with a target specification of Φ200×20mm, including the following steps:

[0028] (1) Raw material ingredients

[0029] Mix germanium Ge, arsenic As, selenium Se and tellurium Te with a chemical purity higher than 99.999% according to the following atomic percentages: germanium 10-30%; arsenic 20-40%; selenium 30-50%; tellurium 0-10%; Silicon 0-10%, the sum of the atomic percentages after mixing is 100%, and the above-mentioned mixture is loaded into a high-purity quartz tube.

[0030] (2) Melting and annealing

[0031] Put the fused quartz tube into a swing furnace, slowly raise the temperature to 800-950°C, swing and melt for 12-30 hours, take it out and cool it, then keep it in the annealing furnace for 12 hours, and then slowly cool it down to room temperature, that is, the low oxygen high temperature is obtained. Pure germanium arsenic selenium tell...

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PUM

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Abstract

The invention discloses a sulfur multi-element alloy target material and a manufacturing method thereof. The target material comprises the chemical elements in percentage by mass: 10-30% of Ge, 20-40%of As, 30-50% of Se, 0%-10% of Si and 0-10% of Te; and the target material has a relative density greater than or equal to 99.5% and an oxygen content below 150 ppm. According to the manufacturing method, firstly, high-purity alloy is synthesized under a vacuum condition; then spherical powder is prepared through high-speed nozzle gas atomization; the alloy is rapidly solidified into a glassy state with few oxygen; and finally, vacuum hot pressing or discharge plasma sintering is carried out to achieve high-density sintering forming without pollution in the sintering process. The sulfur multi-element alloy target material manufactured by the manufacturing method is good in comprehensive performance, excellent in structural performance, high in density and low in oxygen content.

Description

technical field [0001] The invention belongs to the technical field of manufacturing magnetron sputtering targets, and relates to a sulfur-based multi-element alloy target and a manufacturing method thereof. Background technique [0002] Phase-change memory (PCRAM) is considered to be one of the most potential next-generation non-volatile memories due to its great advantages. PCRAM is a new type of non-volatile memory that uses the huge resistance difference between crystalline and amorphous materials to store information. When the phase change material has a higher resistance in the amorphous state and a lower resistance in the crystalline state, the resistance difference between the two states reaches more than 2 orders of magnitude. The rapid transition of phase-change materials between two resistive states can be achieved through current-induced Joule heating. PCRAM has the advantages of strong stability, low power consumption, high storage density, and compatibility w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/35C23C14/14C22C30/00
CPCC22C30/00C23C14/14C23C14/3414C23C14/35
Inventor 何金江石红春万小勇刘晓华张晓娜毛永军闫缓李勇军
Owner 有研新材料股份有限公司