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Preparation method of efficient and stable ultra-thin flexible terahertz shielding material

A shielding material, terahertz technology, applied in the fields of magnetic field/electric field shielding, electrical components, etc., can solve the problems of in-depth research on flexibility stability, insufficient shielding efficiency, and less research, and achieve excellent comprehensive performance and good flexibility. and bending fatigue resistance, high shielding effectiveness

Inactive Publication Date: 2019-12-06
NANKAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

And the thickness of the material is relatively large, so it is not suitable for some situations that require ultra-thin shielding materials
[0005] At present, most of the research on the shielding performance of different electromagnetic shielding materials is concentrated in the frequency range from megahertz to gigahertz, and there are few studies in the terahertz frequency band.
Moreover, the thickness of the existing terahertz shielding materials is mostly above the micron level, and the shielding effectiveness of a few nanometer-thick materials is not high enough, and its flexibility and stability in some harsh environments have not been studied in depth.
Therefore, it is still a great challenge to prepare a terahertz shielding material with excellent comprehensive performance that has ultra-thin thickness, high shielding effectiveness, good flexibility and stability.

Method used

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  • Preparation method of efficient and stable ultra-thin flexible terahertz shielding material
  • Preparation method of efficient and stable ultra-thin flexible terahertz shielding material
  • Preparation method of efficient and stable ultra-thin flexible terahertz shielding material

Examples

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Effect test

Embodiment 1

[0039] (1) The 30 μm thick copper foil was cleaned with deionized water, acetone, and ethanol in sequence, and then placed in a tube furnace. Under the protection of argon (500 sccm), the temperature in the furnace was raised to 1000 °C, and then hydrogen gas (20 sccm) was introduced for annealing for 40 min, and then methane (6 sccm) was introduced as a carbon source to grow graphene, and the growth time was After 13 minutes, stop feeding methane, and cool down naturally in argon and hydrogen.

[0040] (2) Spin-coat a layer of PMMA film on the surface of copper foil grown with graphene as a transfer medium.

[0041] (3) Copper foil with CuSO 4 / HCl etchant (200 g / L CuSO 4 Mixed with concentrated hydrochloric acid 1:1) to remove, leaving the graphene supported by PMMA film, and washed with deionized water repeatedly 5 times.

[0042] (4) Deposit a 40 nm thick copper film on the polyimide (PI) substrate by vacuum evaporation (deposition rate 0.1 nm / s, VZZ-400 high vacuum resi...

Embodiment 2

[0049] (1) The 20 μm thick copper foil was cleaned with deionized water, acetone, and ethanol in sequence, and then placed in a tube furnace. Under the protection of argon, the temperature in the furnace was raised to 1000 °C, and then hydrogen was introduced for annealing for 40 minutes, and then methane was introduced as a carbon source to grow graphene for 13 minutes. Natural cooling in gas and hydrogen.

[0050] (2) Spin-coat a layer of paraffin wax on the surface of copper foil with graphene growth as a transfer medium.

[0051] (3) Copper foil with FeCl 3 / HCl etching solution to remove, leaving the graphene supported by the paraffin layer, and cleaned with deionized water.

[0052] (4) Deposit a 40nm thick copper film on the PI substrate by vacuum evaporation.

[0053] (5) Transfer the graphene supported by the paraffin layer to the surface of the copper film deposited on the PI substrate, and remove the paraffin layer by thermal evaporation.

[0054] (6) Alternatel...

Embodiment 3

[0056] (1) The 50 μm thick copper foil was cleaned with deionized water, acetone, and ethanol in sequence, and then placed in a tube furnace. Under the protection of argon, the temperature in the furnace was raised to 1000 °C, and then hydrogen was introduced for annealing for 40 minutes, and then methane was introduced as a carbon source to grow graphene for 13 minutes. Natural cooling in gas and hydrogen.

[0057] (2) Spin-coat a layer of PMMA film on the surface of copper foil grown with graphene as a transfer medium.

[0058] (3) Copper foil with CuSO 4 / HCl etching solution is removed, and the graphene supported by the PMMA film remains, and is cleaned with deionized water.

[0059] (4) A 80 nm thick copper film was deposited on the PET substrate by magnetron sputtering.

[0060] (5) The graphene supported by the PMMA film was transferred to the surface of the copper film deposited on the PET substrate, and the PMMA film was removed by cleaning with acetone.

[0061] ...

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Abstract

The invention relates to a preparation method of an efficient and stable ultra-thin flexible terahertz shielding material. The preparation steps are as follows: firstly graphene is grown on the surface of a metal substrate by a chemical vapor deposition method; then a layer of transfer medium is coated on the metal substrate on which the graphene is grown; then the metal substrate is removed by anetching solution to leave the graphene supported by the transfer medium; then a layer of metal thin film is deposited on the polymer substrate; then the graphene supported by the transfer medium is transferred to the metal film deposited on the polymer substrate and the transfer medium supporting the graphene is removed; and then the steps of deposition of the metal thin film and transfer of thegraphene are alternately repeated so as to obtain a metal / graphene composite material assembled layer by layer. The metal / graphene layer-by-layer assembled terahertz shielding material has low thickness, high shielding efficiency, good flexibility and high stability and has broad prospects in the terahertz shielding field of microelectronic devices and flexible electronic equipment.

Description

technical field [0001] The invention relates to a method for preparing an efficient and stable ultra-thin flexible terahertz shielding material, in particular to a method for preparing an ultra-thin flexible electromagnetic interference shielding material with high shielding efficiency and stability in the terahertz frequency band. Background technique [0002] Terahertz (Tera Hertz, THz) waves refer to electromagnetic waves with a frequency in the range of 0.1-10 THz (wavelength 3000-30 μm), which coincide with millimeter waves in the long-wave band and coincide with infrared light in the short-wave band. The transition zone from classical theory to microscopic quantum theory, and also from electronics to photonics, is called the "terahertz gap (THzgap)" of the electromagnetic spectrum. [0003] With the rapid development of high-frequency electronic devices, terahertz technology has shown great potential in a wide range of applications such as biosensing, spectral imaging,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05K9/00
CPCH05K9/0084H05K9/0088
Inventor 黄毅侯胜月马文乐李广浩
Owner NANKAI UNIV
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