Flexible energy storage thin film, preparation method thereof and thin film capacitor

A thin film and energy storage technology, applied in the energy field, can solve the problems of insufficient flexibility of energy storage films, achieve good retention rate and stability of binding force, improve energy storage performance, and high breakdown field strength

Active Publication Date: 2020-02-07
INST OF FLEXIBLE ELECTRONICS TECH OF THU ZHEJIANG +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Based on this, it is necessary to address the problem of insufficient flexibility of the ceramic energy storage film, to provide a flexible energy storage film and its preparation method, and a film capacitor; through this preparation method, the flexibility of the energy storage film is realized, and at the same time, the energy storage film has a High reliability and high energy storage density, can be used as a dielectric material for film capacitors

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  • Flexible energy storage thin film, preparation method thereof and thin film capacitor
  • Flexible energy storage thin film, preparation method thereof and thin film capacitor

Examples

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preparation example Construction

[0047] Such as figure 1 As shown, the preparation method of the flexible energy storage film provided by the invention comprises:

[0048] (a), providing a flexible metal substrate 10;

[0049] (b) Depositing and forming a metal film 20 on the flexible metal substrate 10 by using a single metal substance as a target material by using a magnetic filter multi-arc ion plating method;

[0050] (c), using strontium titanate as a target, depositing a strontium titanate prefabricated layer 30 on the metal thin film 20 by magnetron sputtering;

[0051](d), heat-treating the flexible metal substrate 10 deposited with the metal thin film 20 and the strontium titanate prefabricated layer 30, so that the metal atoms in the metal thin film 20 diffuse to the strontium titanate prefabricated layer 30 to obtain the ceramic thin film 31, Wherein, the ceramic thin film 31 includes a diffusion solid solution layer 311 doped with strontium titanate and a strontium titanate layer 312 bonded to t...

Embodiment 1

[0096] With flexible rolled copper foil as the substrate, the thickness is 18 microns, the surface roughness is 0.4 microns, placed in a vacuum chamber, and vacuumed to 3×10 -3 Pa. The vacuum chamber is heated to 150°C, the holding time is 10min, filled with argon gas, the flow rate of argon gas is 30sccm, the Hall ion source is turned on, the voltage of the Hall ion source is set to 1000v, the current is 0.5A, and the copper foil is processed for 1min. The surface tension reaches 60 dynes.

[0097] Close the small gate valve to a vacuum of 2.0×10 -2 Pa, keep the argon gas flow rate at 30 sccm, turn on the magnetic filter multi-arc ion plating power supply, adjust the arc current to 50A, draw the current to 9A, apply a bias voltage of 5V to the flexible rolled copper foil, and use the strontium target as the single metal target, The deposition time is 30s, and a 10nm strontium thin film is formed on the copper foil.

[0098] Turn off the magnetic filter multi-arc ion platin...

Embodiment 2

[0103] With a flexible silver foil as the substrate, the thickness is 12 microns, the surface roughness is 0.5 microns, placed in a vacuum chamber, and evacuated to 3×10 -3 Pa. The vacuum chamber is heated to 200°C, the holding time is 10min, filled with argon gas, the flow rate of argon gas is 30sccm, the Hall ion source is turned on, the voltage of the Hall ion source is set to 1000v, the current is 0.5A, and the treatment is 5min to make the silver foil The surface tension reaches 70 dynes.

[0104] Close the small gate valve to a vacuum of 2.0×10 -2 Pa, keep the argon flow at 30sccm, turn on the magnetic filter multi-arc ion plating power supply, adjust the arc current to 55A, draw the current to 9A, apply a bias voltage of 10V to the flexible silver foil, and use the calcium target as the single metal target, deposit For 60s, a 40nm calcium film is formed on the copper foil.

[0105] Turn off the magnetic filter multi-arc ion plating power supply, increase the argon ga...

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Abstract

The invention relates to a flexible energy storage thin film, a preparation method thereof and a thin film capacitor. The preparation method comprises the steps of providing a flexible metal substrate; taking a metal element as a target, and depositing a metal thin film on the flexible metal substrate by a magnetic filtering multi-arc ion plating method; taking strontium titanate as a target, anddepositing to form a strontium titanate pre-fabrication layer on the metal thin film by a magnetron sputtering method; and performing thermal processing on the flexible metal substrate deposited withthe metal thin film and the strontium titanate pre-fabrication layer so that metal atoms in the metal thin film are diffused towards the strontium titanate pre-fabrication layer to obtain a ceramic thin film, wherein the ceramic thin film comprises a metal atom-doped strontium titanate diffusion solid-solution layer and a strontium titanate layer which are sequentially attached onto the metal thinfilm. By the preparation method, flexibility of the energy storage thin film is achieved; and meanwhile, the energy storage thin film also has high reliability and high energy storage density and canbe used as a dielectric material of the thin film capacitor.

Description

technical field [0001] The invention relates to the field of energy, in particular to a flexible energy storage film, a preparation method thereof, and a film capacitor. Background technique [0002] With the gradual development of electronic equipment towards miniaturization, multi-function and light weight, the electronic components that make up electronic equipment also need to develop towards the trend of miniaturization, light weight, high integration and multi-function. [0003] For film capacitors, the ideal way to achieve miniaturization is to increase the dielectric constant of the dielectric film to increase the capacitance. Dielectric films mainly include polymer energy storage films and ceramic energy storage films. In traditional film capacitors, the dielectric films used are mainly polymer energy storage films. Since the dielectric constant of ceramic energy storage films is much higher than that of polymer energy storage films, the use of ceramic energy stora...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G13/00H01G4/33H01G4/12C23C14/08C23C14/16C23C14/32C23C14/35C23C14/58
CPCH01G13/00H01G4/33H01G4/1227C23C14/35C23C14/325C23C14/16C23C14/088C23C14/5806Y02E60/13
Inventor 冯雪王志建
Owner INST OF FLEXIBLE ELECTRONICS TECH OF THU ZHEJIANG
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