Preparation method of bismuth ferrite nanowire solar cell

A solar cell, bismuth ferrite nanotechnology, applied in nanotechnology, nanotechnology, nanotechnology for information processing, etc., can solve the problems of low photocurrent density and low photoelectric conversion efficiency of BiFeO3 materials

Inactive Publication Date: 2020-04-10
游利
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Problems solved by technology

[0003] In 2009, Choi et al. found that there is a large photovoltaic effect in the multiferroic material BiFeO3 single crystal, which has a narrow optical bandgap (2.2 eV) and a high saturation polarization (90 μC/cm2), which makes The application of BiFeO3 materials in photovoltaic devices has become possible, but the photocurrent density generated by them is small (7.35 μA/cm2), which directly leads to the low photoelectric conversion efficiency of BiFeO3 materials [T. Choi, S. Lee, Y. J. Choi, V. Kiryukhin, and S. W.Cheong, Science,324, 63 (2009).]; In addition, the research on the photovoltaic effect of BiFeO3 thin films shows that BiFeO3 thin films have a wider optical bandgap (about 2.7 eV) and a higher open circuit voltage (0.3-0.9 V) [W. Ji, K. Yao, and Y. C. Liang, Adv. Mater. 22, 1763 (2010). S. Y. Yang, L. W. Martin, S. J. Byrnes, T. E. Conry, S. R. Basu, D. Paran, L. . Reichertz, J. Ihlefeld, C. Adamo, A. Melville, Y. H. Chu, C. H. Yang, J. L. Musfeldt, D. G. Schlom, J. W. Ager III, and R. Ramesh, Appl. Phys. Lett. 95, 062909 (2009).] ; However, the optical bandgap of BiFeO3 films can be adjusted by changing the film thickness, the oxygen pressure during deposition, and the stress generated between the film and the substrate [K. Jiang, J. J. Zhu, J. D. Wu, J. Sun, Z. G. Hu, and J. H. Chu, ACS Applied Materials & Interfaces, 3, 4844 (2011). Z. Fu, Z. G. Yin, N. F. Chen, X. W. Zhang, H. Zhang, Y. M. Bai, and J. L. Wu, Phys. Status Solidi RRL, 6,37 (2012 ).]

Method used

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  • Preparation method of bismuth ferrite nanowire solar cell

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specific Embodiment 1

[0028] 1. High-purity Al sheet annealing

[0029] The annealing temperature is 500°C, the annealing time is 4 hours, and it is taken out after being cooled to room temperature with the furnace.

[0030] 2. ultrasonic cleaning

[0031] Sonicate with acetone, ethanol, and deionized water for 3 minutes in sequence to remove stains on the surface of the Al sheet.

[0032] 3. remove natural oxide layer

[0033] Use 2 mol / L NaOH solution, the temperature is 60 ℃, the soaking time is 2 minutes, then take it out and rinse it with deionized water to remove the natural oxide layer.

[0034] 4. electrochemical polishing

[0035] Put the Al sheet into a mixed solution of 5vol% sulfuric acid, 95vol% phosphoric acid and 20 g / L chromic acid, use a stirring device to circulate and stir the mixed solution, perform electrochemical polishing for 5 minutes, the temperature of the water bath is 85 °C, and the polishing current is 0.8 A, then take it out and clean it with deionized water. ...

specific Embodiment 2

[0055] The difference between this embodiment and the specific example 1 is that in step 5, the voltage of anodic oxidation is changed to 10 V, 25 V, 60 V, and 100 V respectively, and then the pore sizes are respectively 20 nm, 35 nm, 80 nm, and 120 nm. nm porous alumina template, other steps and parameters are the same as those in Embodiment 1.

[0056] Implementation effect: the optical bandgap of BiFeO3 nanowires is 2.4 eV, under the irradiation of AM 1.5, 100 mW / cm2 standard light intensity, the short-circuit current density is 6-8 mA / cm2, the open-circuit voltage is 0.8-1 V, the efficiency It is 0.8-1.2%.

specific Embodiment 3

[0058] The difference between this embodiment and the specific example 1 is that in step 7, the double-pass porous alumina template is immersed in 6wt% phosphoric acid to expand the pores for 5-40 minutes, and a double-pass alumina template with a pore size of 60-200 nm can be obtained. Other steps and parameters are the same as those in the first embodiment.

[0059] Implementation effect: the optical bandgap of BiFeO3 nanowires is 2.4 eV, under the irradiation of AM 1.5, 100 mW / cm2 standard light intensity, the short-circuit current density is 6-7 mA / cm2, the open-circuit voltage is 0.8-0.9 V, the efficiency It is 0.8-1%.

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Abstract

The invention belongs to the technical field of semiconductor materials, and particularly relates to a preparation method of a BiFeO<3> nanowire solar cell. An optical band gap of the BiFeO<3> nanowire solar cell is reduced through the BiFeO<3> nanowire structure, sunlight absorption of the BiFeO<3> nanowire solar cell is improved, the carrier collection capacity is improved through the Ag nanowire and the ITO upper electrode, and then the purpose of improving the photoelectric conversion efficiency of the BiFeO<3> nanowire solar cell is achieved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and in particular relates to a preparation method of a BiFeO3 nanowire solar cell. Background technique [0002] At present, traditional silicon-based solar cells use p-n junctions or Schottky junctions to separate electron-hole pairs, and the light-induced voltage is limited by the high energy barrier in the interface region, resulting in a small open-circuit voltage; secondly, in order to To improve the conversion efficiency of the cell, it is usually necessary to design a special anti-reflection structure and passivate the surface to increase the absorption of sunlight; more importantly, the price of silicon raw materials determines the manufacturing cost of silicon-based solar cells Expensive; therefore, silicon-based solar cells have disadvantages such as low open circuit voltage, complex structural design, and expensive manufacturing costs; however, another mechanism of phot...

Claims

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Application Information

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IPC IPC(8): H01L31/032H01L31/0224H01L31/18B82Y10/00B82Y30/00B82Y40/00
CPCB82Y10/00B82Y30/00B82Y40/00H01L31/022425H01L31/022475H01L31/032H01L31/18Y02E10/50Y02P70/50
Inventor 游利
Owner 游利
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