Preparation method of bismuth ferrite nanowire solar cell

Abstract

The invention belongs to the technical field of semiconductor materials, and particularly relates to a preparation method of a BiFeO<3> nanowire solar cell. An optical band gap of the BiFeO<3> nanowire solar cell is reduced through the BiFeO<3> nanowire structure, sunlight absorption of the BiFeO<3> nanowire solar cell is improved, the carrier collection capacity is improved through the Ag nanowire and the ITO upper electrode, and then the purpose of improving the photoelectric conversion efficiency of the BiFeO<3> nanowire solar cell is achieved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and in particular relates to a preparation method of a BiFeO3 nanowire solar cell. Background technique [0002] At present, traditional silicon-based solar cells use p-n junctions or Schottky junctions to separate electron-hole pairs, and the light-induced voltage is limited by the high energy barrier in the interface region, resulting in a small open-circuit voltage; secondly, in order to To improve the conversion efficiency of the cell, it is usually necessary to design a special anti-reflection structure and passivate the surface to increase the absorption of sunlight; more importantly, the price of silicon raw materials determines the manufacturing cost of silicon-based solar cells Expensive; therefore, silicon-based solar cells have disadvantages such as low open circuit voltage, complex structural design, and expensive manufacturing costs; however, another mechanism of phot...

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Problems solved by technology

[0003] In 2009, Choi et al. found that there is a large photovoltaic effect in the multiferroic material BiFeO3 single crystal, which has a narrow optical bandgap (2.2 eV) and a high saturation polarization (90 μC / cm2), which makes The application of BiFeO3 materials in photovoltaic devices has become possible, but the photocurrent density generated by them is small (7.35 μA / cm2), which directly leads to the low photoelectric conversion efficiency of BiFeO3 materials [T. Choi, S. Lee, Y. J. Choi, V. Kiryukhin, and S. W.Cheong, Science,324, 63 (2009).]; In addition, the research on the photovoltaic effect of BiFeO3 thin films shows that BiFeO3 thin films have a wider optical bandgap (about 2.7 eV) and a higher open circuit voltage (0.3-0.9 V) [W. Ji, K. Yao, and Y. C. Liang, Adv. Mater. 22, 1763 (2010). S. Y. Yang, L. W. Martin, S. J. Byrnes, T. E. Conry, S. R. Basu, D. Paran, L. . Reichertz, J. Ihlefeld, C. Adamo, A. Melville, Y. H. Chu, C. H. Yang, J. L. Musfeldt, D. G. Schlom, J. W. Ager III, and R. Ramesh, Appl. Phys. Lett. 95, 062909 (2009).] ; However, the optical bandgap of BiFeO3 films can be adjusted by changing the film thickness, the oxygen pressure during deposition, and the stress generated between the film and the substrate [K. Jiang, J. J. Zhu, J. D. Wu, J. Sun, Z. G. Hu, and J. H. Chu, ACS Applied Materials & Interfaces, 3, 4844 (2011). Z. Fu, Z. G. Yin, N. F. Chen, X. W. Zhang, H. Zhang, Y. M. Bai, and J. L. Wu, Phys. Status Solidi RRL, 6,37 (2012 ).]; another study showed that polycrystalline BiFeO3 thin films have a narrow optical bandgap (2.2 eV) and a large photocurrent density (2.8 mA / cm2) [Y. Y. Zang, D. Xie, X. Wu, Y . Chen, Y. X. Lin, M. H.Li, H. Tian, ​​X. Li, Z. Li, H. W. Zhu, T. L. Ren, and D. Plant, Appl. Phys.Lett. 99, 132904 (2011).]; Electrode materials on the optical properties of polycrystalline BiFeO3 thin films The influence of polycrystalline BiFeO3 thin films using oxide electrode materials is greater than that of metal materials [B. Chen, M. Li, Y.W. Liu, Z. H. Zuo, F. Zhuge, Q. F. Zhan, and R. W. Li, Nanotechnology, 22,195201 (2011).]; In addition, studies on the optical properties of BiFeO3 nanowires also show that it has a lower optical bandgap (2.5eV) [F. Gao, Y. Yuan, K. F. Wang, X. Y. Chen , F. Chen, J. M. Liu, and Z. F.Ren, Appl. Phys. Lett. 89, 102506 (2006).]; it can be seen that there have been many reports on the photovoltaic effect of BiFeO3 materials, but most of them are bulk materials Or the BiFeO3 of thin-film material, the research on the optical properties of low-dimensional structure BiFeO3 is still rarely reported, although there are several literatures reporting the preparation and optical properties of BiFeO3 nanowires, but only pure BiFeO3 nanowire arrays are involved. , the research on its electrical properties such as open circuit voltage and photocurrent density has not been reported, and there has been no report on BiFeO3 nanowire solar cells with other structures.

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