High-thermal-conductivity graphite film, and preparation method and application thereof
A technology of high thermal conductivity graphite and graphite film, which is applied in the field of graphite film, can solve the problems of difficult to obtain thermal conductivity and high graphite film, and achieve the effect of good flatness, high thermal conductivity and improved order degree
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Embodiment 1
[0035] 1. The 500ml three-neck flask equipped with mercury seal, nitrogen inlet tube, drying tube and bottle stopper is baked with flame to remove trace moisture, and after cooling under nitrogen flow, add 10g of ODA ( 4,4'-diaminodiphenyl ether), and rinse the funnel with 160 g of dimethylacetamide. Then add 10.90 g of pyromellitic anhydride (PMDA) within 2-3 minutes through another dry powder funnel under vigorous stirring, and then rinse with 28 g of dimethylacetamide, replace the powder funnel with a stopper, and put the three The flask was placed in ice water at -10°C, and mixed and stirred for 6 hours to obtain a precursor polyamic acid solution. And store it in a closed and dry flask at -15°C for future use.
[0036] 2. Spin-coat the precursor polyamic acid solution on the dry monocrystalline silicon wafer by a spin coater to obtain a liquid film with a thickness of 150-200 μm, and dry it at 80°C for 20 minutes under a dry nitrogen flow. This partially dried film can b...
Embodiment 2
[0048] 1. Bake the 500ml three-neck flask equipped with mercury seal, nitrogen gas inlet tube, drying tube and bottle stopper with flame to remove trace moisture, and after cooling under nitrogen flow, add 10g of p-benzene through the powder funnel in the drying box diamine (PDA), and rinse the funnel with 160 g of N-methylpyrrolidone. Then add 11.00 g of biphenyltetracarboxylic dianhydride (BPDA) within 3 minutes through another dry powder funnel under vigorous stirring, and then rinse with 30 g of N-methylpyrrolidone, replace the powder funnel with a stopper, and place the three-necked flask Mix and stir in ice water at -15°C for 3 hours to prepare a precursor polyamic acid solution. And store it in a closed and dry flask at -15°C for future use.
[0049] 2. Spin-coat the precursor polyamic acid solution on the dry monocrystalline silicon wafer by a spin coater to obtain a liquid film with a thickness of 150-200 μm, and dry it at 80°C for 20 minutes under a dry nitrogen flo...
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