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A kind of moon coating and its preparation method and application

A coating and substrate technology, applied in the field of thin film electrode and surface protective coating preparation, can solve the problems such as affecting the electrochemical electrode energy storage performance of the electrode, difficult to flexible electrodes and flexible energy storage devices, reducing the effective specific surface area of ​​the electrode, etc. , to achieve the effect of improving the interface electrical contact, good film-base adhesion, and good electrical conductivity

Active Publication Date: 2022-03-25
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method has two disadvantages: first, the binder will prevent part of the active surface of the electrode from contacting the electrolyte, reduce the effective specific surface area of ​​the electrode, and increase the internal resistance of the electrode, affecting the electrochemical electrode energy storage performance of the electrode; The second is that the bonding force of the electrode made of binder is not high, and the powder falls off or separates from the collector during charging and discharging, which will cause a significant decrease in the cycle life of the electrode.
Electrodes that grow active materials on metal foam collectors by chemical methods such as hydrothermal method can avoid the use of adhesives, but such electrodes are poorly flexible, making it difficult to make flexible electrodes and flexible energy storage devices.

Method used

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  • A kind of moon coating and its preparation method and application
  • A kind of moon coating and its preparation method and application
  • A kind of moon coating and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] 1. Fix the pretreated P-doped conductive silicon or flexible graphite film substrate on the workpiece turret in the coating chamber, so that the substrate is facing the surface of the molybdenum target, the distance between the target and the base is 26cm, and the rotation speed of the turret is adjusted to 10rpm. The speed is 0rpm, turn on the heater to raise the temperature to 300°C, and pre-pump the background vacuum to 5.0×10 -3 Pa;

[0038] 2. Open the Ar gas flow valve, adjust the air pressure to 0.5Pa, turn on the DC pulse bias power supply, adjust the substrate bias voltage to -600V, duty cycle 30%, frequency 40kHz, open the anode layer ion source and adjust the current 5A to conduct Ion source etching and cleaning for 5 minutes;

[0039] 3. Reduce the substrate bias to -150V, turn on Ar, N 2 Gas flow valve, adjust Ar / N 2 The flow ratio is 1:4, adjust the total air pressure to 0.9Pa, turn on the Cr arc target, adjust the target current to 80A, and deposit for...

Embodiment 2

[0049] 1. Fix the pretreated P-doped conductive silicon or flexible graphite film substrate on the workpiece turret in the coating chamber, so that the substrate is facing the surface of the molybdenum target, the distance between the target and the base is 26cm, and the rotation speed of the turret is adjusted to 10rpm. The speed is 0rpm, turn on the heater to raise the temperature to 300°C, and pre-pump the background vacuum to 5.0×10 -3 Pa;

[0050] 2. Open the Ar gas flow valve, adjust the air pressure to 0.5Pa, turn on the DC pulse bias power supply, adjust the substrate bias voltage to -600V, duty cycle 30%, frequency 40kHz, open the anode layer ion source and adjust the current 5A to conduct Ion source etching and cleaning for 5 minutes;

[0051] 3. Reduce the substrate bias to -150V, turn on Ar, N 2 Gas flow valve, adjust Ar / N 2 The flow ratio is 1:4, adjust the total air pressure to 0.9Pa, turn on the Cr arc target, adjust the target current to 80A, and deposit for...

Embodiment 3

[0055] The MoON coating was prepared by the pulsed magnetron sputtering deposition method in Example 1, and the atomic percentage content of each element in the layer was: Mo: 26 at.%, O: 40 at.%, N: 34 at.%.

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Abstract

The invention belongs to the technical field of thin film electrodes and surface protective coatings, and discloses a MoON coating, a preparation method and application thereof. The MoON coating is prepared by a pulsed magnetron sputtering deposition method, and the atomic percentage content of each element in the layer is: Mo: 26-41 at.%, O: 24-64 at.%, N: 9-36 at.%. The invention adopts the pulsed magnetron sputtering deposition method, and combines the advantages of molybdenum nitride and molybdenum oxide to prepare MoON coating with excellent electrochemical performance, which has the characteristics of good film-base bonding force, high capacitance value, and long cycle life. , which significantly improves the performance of transition metal compound thin film electrodes, and can be deposited on flexible substrates as electrodes, making it widely used in flexible energy storage devices.

Description

technical field [0001] The invention belongs to the technical field of preparation of thin film electrodes and surface protective coatings, and more specifically relates to a MoON coating and its preparation method and application. Background technique [0002] Most transition metal compounds currently used in supercapacitor electrodes are oxides and nitrides. Transition metal oxides have a high theoretical capacitance value, and can undergo redox reactions for chemical energy storage, but have poor conductivity, large charge transfer resistance, and the crystal structure is easily destroyed during electrochemical charging and discharging, which affects cycle life; The transition metal nitrides have better conductivity and high chemical stability, but because they only have physical absorption / desorption energy storage in the electric double layer, the theoretical capacitance value is low. Combining oxides and nitrides to make oxynitrides can combine the advantages of nitri...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/02C23C14/06C23C14/32C23C14/54H01G11/26
CPCC23C14/352C23C14/3485C23C14/0676C23C14/024C23C14/325C23C14/0641C23C14/022C23C14/0021C23C14/54H01G11/26Y02E60/13
Inventor 张腾飞张银团王启民吴正涛
Owner GUANGDONG UNIV OF TECH
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