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Perovskite quantum dot solar cell and preparation method thereof

A technology of solar cells and quantum dots, applied in the field of solar cells, can solve the problems of low short-circuit current density, inability to remove long-chain insulating ligands thoroughly, poor repeatability, etc., achieve high short-circuit current density and device performance, and improve photoelectric conversion efficiency , The effect of promoting charge transport

Active Publication Date: 2020-05-22
SUZHOU UNIV
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

CsPbI prepared by precursor method 3 Polycrystalline thin film solar cells compared to CsPbI 3 Quantum dot solar cells have more advantages in open-circuit voltage, but have obvious disadvantages in short-circuit current. This is because the long-chain insulating ligands cannot be completely removed in the traditional ligand treatment process, resulting in poor charge transport performance. Difference
[0006] At present, reports on perovskite quantum dot solar cells are still very rare, mainly because perovskite quantum dots are sensitive to humidity and temperature during the synthesis process, the repeatability is relatively poor, and the preparation process is relatively complicated.
In the process of processing the light-absorbing layer of perovskite quantum dots, the long-chain ligands cannot be completely removed, resulting in a large number of long-chain ligands still existing in the light-absorbing layer, which greatly affects its transmission performance and makes its short-circuit current density Much lower than the corresponding polycrystalline thin film device

Method used

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  • Perovskite quantum dot solar cell and preparation method thereof
  • Perovskite quantum dot solar cell and preparation method thereof
  • Perovskite quantum dot solar cell and preparation method thereof

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Embodiment 1

[0031] This embodiment provides a kind of perovskite quantum dot solar cell, the structure is as follows figure 1 As shown, an electron transport layer 2, a perovskite quantum dot light-absorbing layer 3, a hole transport layer 4 and a metal electrode 5 are sequentially prepared on a conductive glass substrate 1; the specific steps of preparation are as follows:

[0032] Step 1: Use detergent, deionized water, acetone and isopropanol to ultrasonically wash the FTO conductive substrate 1 in sequence; prepare a titanium oxide film with a thickness of 40 nm on the cleaned FTO by chemical bath deposition, and obtain Electron transport layer 2, and annealed at 200°C for 30 minutes;

[0033] Step 2: FTO / TiO 2 Substrate is transferred in the glove box, and the atmosphere of glove box is dry air; The CsPbI of 70mg / mL 3 Quantum dots spin-coated in n-octane solution on FTO / TiO 2 On the substrate, the spin-coating speed is 2000rpm, and then the prepared CsPbI 3 The quantum dot film i...

Embodiment 2

[0038] This embodiment provides a kind of perovskite quantum dot solar cell, the structure is as follows figure 1 As shown, the preparation of the battery includes the following steps: sequentially preparing an electron transport layer 2 , a perovskite quantum dot light-absorbing layer 3 , a hole transport layer 4 and a metal electrode 5 on a conductive glass substrate 1 . Its preparation method and concrete steps are as follows:

[0039] Step 1: Use detergent, deionized water, acetone and isopropanol to ultrasonically wash the FTO conductive substrate 1 in sequence; prepare a titanium oxide film with a thickness of 40 nm on the cleaned FTO by chemical bath deposition, and obtain Electron transport layer 2, and annealed at 200°C for 30 minutes;

[0040] Step 2: FTO / TiO 2 Substrate is transferred in the glove box, and the atmosphere of glove box is dry air; The CsPbI of 70mg / mL 3 Quantum dots spin-coated in n-octane solution on FTO / TiO 2 On the substrate, the spin-coating s...

Embodiment 3

[0045] This embodiment provides a kind of perovskite quantum dot solar cell, the structure is as follows figure 1 As shown, the preparation of the battery includes the following steps: sequentially preparing an electron transport layer 2 , a perovskite quantum dot light-absorbing layer 3 , a hole transport layer 4 and a metal electrode 5 on a conductive glass substrate 1 . Its preparation method and concrete steps are as follows:

[0046] Step 1: Use detergent, deionized water, acetone and isopropanol to ultrasonically wash the FTO conductive substrate 1 in sequence; prepare a titanium oxide film with a thickness of 40 nm on the cleaned FTO by chemical bath deposition, and obtain Electron transport layer 2, and annealed at 200°C for 30 minutes;

[0047] Step 2: FTO / TiO 2 Substrate is transferred in the glove box, and the atmosphere of glove box is dry air; The CsPbI of 70mg / mL 3 Quantum dots spin-coated in n-octane solution on FTO / TiO 2 On the substrate, the spin-coating s...

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Abstract

The invention relates to a perovskite quantum dot solar cell and a preparation method thereof. A light absorption layer of the perovskite quantum dot solar cell is processed by adopting organic amineto obtain the high-performance perovskite quantum dot solar cell. The light absorption layer of perovskite quantum dot solar cell provided by the invention is made of a material of ABX<3>, wherein A is cesium Cs<+>, methylimidazole FA<+>, CH(NH<2>)<2><+> or methylamine MA<+> and CH<3>NH<3><+>, B is Pb<2+> or Sn<2+>, and X is Cl<->, Br<-> or I<-> quantum dots; and the light absorption layer is subjected to organic amine processing. According to the invention, organic amine is used for processing the perovskite quantum dot light absorption layer, and a long-chain insulating ligand in the light absorption layer is effectively removed, so that the charge transmission performance of the light absorption layer is improved, the charge recombination effect of the light absorption layer is reduced,and the photoelectric conversion efficiency of the cell is improved. The perovskite quantum dot cell provided by the invention has the advantages of excellent efficiency, good stability, easiness inpreparation and the like.

Description

technical field [0001] The invention belongs to the field of solar cells, and in particular relates to a method for improving the performance of perovskite quantum dot solar cells by utilizing organic amines and the solar cells thereof. Background technique [0002] Metal halide perovskite materials have the advantages of high light absorption coefficient, low exciton binding energy, bipolar transport effect, and micron-scale diffusion length. In the past ten years, the photoelectric conversion efficiency has increased rapidly from 3.9% at the beginning to 25.2%, which has attracted widespread attention. In addition, compared with the crystalline silicon solar cells that have been commercially used at present, the perovskite solar cells can be prepared by the whole solution method, the process is simple and the battery cost is low. [0003] However, the light-absorbing layer materials used in high-efficiency perovskite solar cells are all organic or organic-inorganic hybrid...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48
CPCH10K71/00H10K71/12H10K85/00H10K30/10H10K30/80Y02P70/50
Inventor 马万里王耀袁建宇
Owner SUZHOU UNIV
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