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A kind of carbon and silicon carbide ceramic sputtering target material and preparation method thereof

A silicon carbide ceramic and sputtering target technology, which is applied in sputtering coating, metal material coating process, vacuum evaporation coating and other directions, can solve the problems of long production cycle, high water absorption, low product density, etc. Conducive to industrialized production, excellent product performance, and the effect of guaranteeing excellent performance

Active Publication Date: 2022-04-12
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the preparation method can provide sufficient sintering power at high temperature compared with the traditional atmospheric pressure sintering process, the prepared SiC / C ceramic composite material not only has a graphite addition of 35-50wt%, but also has a uniform microstructure, The theoretical sintered density is above 98%, and the mechanical strength is high, but it still has the disadvantages of complicated process and long production cycle
[0009] Although the above preparation methods in the prior art all adopt the hot pressing sintering process, the process flow is relatively complicated, the production cycle is long, and problems such as low product density, high water absorption rate, and low purity are also faced.

Method used

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  • A kind of carbon and silicon carbide ceramic sputtering target material and preparation method thereof
  • A kind of carbon and silicon carbide ceramic sputtering target material and preparation method thereof

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preparation example Construction

[0069] figure 1 A flow chart of the method for preparing a carbon and silicon carbide ceramic sputtering target provided by the present invention is shown, which specifically includes the following steps:

[0070] (1) Mix carbon powder, silicon carbide powder and binder according to the ratio, and carry out sieving treatment;

[0071] (2) the mixed powder after step (1) sieves is packed into mold and is compacted with tool;

[0072] (3) hot pressing and sintering the compacted mold in step (2) at 1850-2200° C. to obtain carbon and silicon carbide ceramic sputtering target blanks;

[0073] (4) Machining the carbon and silicon carbide ceramic sputtering target blanks obtained in step (3) to obtain carbon and silicon carbide ceramic sputtering targets;

[0074] (5) The carbon and silicon carbide ceramic sputtering targets obtained in step (4) are subjected to size inspection, and qualified products are cleaned, dried and packaged sequentially to meet the shipping standard.

[...

Embodiment 1

[0077] This embodiment provides a method for preparing a carbon and silicon carbide ceramic sputtering target, comprising the following steps:

[0078](1) According to the atomic ratio of C(at%)=60%, take the corresponding carbon powder and silicon carbide powder, and add glycerin whose addition amount is 2% of the total mass of carbon powder and silicon carbide powder as a binding agent, three Put them into the cleaned powder mixing tank, and press argon for protection at the same time, then put the sealed powder mixing tank on the rolling altar machine, and mix at a rolling speed of 15r / min for 24 hours; pause the rolling altar every 8 hours during the mixing period machine, then shake the powder mixing tank, and at the same time tap the outer wall of the powder mixing tank with a rubber hammer for a duration of 5 minutes; after the mixing is completed, use an 80-mesh sieve for screening;

[0079] (2) the mixed powder after step (1) sieves is packed in the graphite mould, is...

Embodiment 2

[0084] This embodiment provides a method for preparing a carbon and silicon carbide ceramic sputtering target, comprising the following steps:

[0085] (1) According to the atomic ratio of C(at%)=70%, take corresponding carbon powder and silicon carbide powder, and add the glycerin that the addition amount is the total mass of carbon powder and silicon carbide powder 3% as binding agent, three Put them into the cleaned powder mixing tank, press argon for protection at the same time, then put the sealed powder mixing tank on the rolling altar machine, and mix at the rolling speed of 20r / min for 20h; pause the rolling altar every 7h during the mixing period machine, then shake the powder mixing tank, and at the same time tap the outer wall of the powder mixing tank with a rubber hammer for a duration of 8 minutes; after the mixing is completed, use a 100-mesh sieve for sieving treatment;

[0086] (2) the mixed powder after step (1) sieves is packed in the graphite mould, is comp...

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Abstract

The invention relates to a carbon and silicon carbide ceramic sputtering target material and a preparation method thereof. The preparation method includes: (1) mixing carbon powder, silicon carbide powder and binder in proportion, and performing sieving treatment; (2) putting the mixed powder sieved in step (1) into a mold and compacting it with a tool ; (3) hot pressing and sintering the compacted mold in step (2) at 1850-2200° C. to obtain carbon and silicon carbide ceramic sputtering target blanks; (4) carbon and silicon carbide ceramics obtained in step (3) Sputtering target blanks are machined to obtain carbon and silicon carbide ceramic sputtering targets. The preparation method not only has a simple process flow and a short production cycle, but also can make the prepared carbon and silicon carbide ceramic sputtering targets have a density ≥ 98%, a purity ≥ 3N, a water absorption rate < 0.1%, and a resistivity < 0.15Ω m, which meets the density and formability requirements of carbon and silicon carbide ceramic sputtering targets, and provides better performance guarantee for subsequent sputtering use.

Description

technical field [0001] The invention relates to the field of target material and target material preparation, in particular to a carbon and silicon carbide ceramic sputtering target material and a preparation method thereof. Background technique [0002] Physical vapor deposition (Physical Vapor Deposition, PVD) refers to the use of low-voltage, high-current arc discharge technology under vacuum conditions to use gas discharge to evaporate the material source and ionize both the evaporated substance and the gas, and then pass The acceleration of the electric field causes the evaporated substance and its reaction product to deposit on the workpiece to form a thin film with a special function. PVD technology is the core technology of various industries such as semiconductor chip manufacturing, solar energy industry, and LCD manufacturing industry. The main methods are vacuum evaporation, arc plasma plating, ion coating, molecular beam epitaxy and sputtering coating, etc. [0...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/565C04B35/52C04B35/645C23C14/34C23C14/06
CPCC04B35/565C04B35/52C04B35/645C23C14/3407C23C14/3414C23C14/06C04B2235/77C04B2235/96
Inventor 姚力军潘杰边逸军王学泽马国成
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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