A kind of carbon and silicon carbide ceramic sputtering target material and preparation method thereof

Abstract

The invention relates to a carbon and silicon carbide ceramic sputtering target material and a preparation method thereof. The preparation method includes: (1) mixing carbon powder, silicon carbide powder and binder in proportion, and performing sieving treatment; (2) putting the mixed powder sieved in step (1) into a mold and compacting it with a tool ; (3) hot pressing and sintering the compacted mold in step (2) at 1850-2200° C. to obtain carbon and silicon carbide ceramic sputtering target blanks; (4) carbon and silicon carbide ceramics obtained in step (3) Sputtering target blanks are machined to obtain carbon and silicon carbide ceramic sputtering targets. The preparation method not only has a simple process flow and a short production cycle, but also can make the prepared carbon and silicon carbide ceramic sputtering targets have a density ≥ 98%, a purity ≥ 3N, a water absorption rate < 0.1%, and a resistivity < 0.15Ω m, which meets the density and formability requirements of carbon and silicon carbide ceramic sputtering targets, and provides better performance guarantee for subsequent sputtering use.

Description

technical field [0001] The invention relates to the field of target material and target material preparation, in particular to a carbon and silicon carbide ceramic sputtering target material and a preparation method thereof. Background technique [0002] Physical vapor deposition (Physical Vapor Deposition, PVD) refers to the use of low-voltage, high-current arc discharge technology under vacuum conditions to use gas discharge to evaporate the material source and ionize both the evaporated substance and the gas, and then pass The acceleration of the electric field causes the evaporated substance and its reaction product to deposit on the workpiece to form a thin film with a special function. PVD technology is the core technology of various industries such as semiconductor chip manufacturing, solar energy industry, and LCD manufacturing industry. The main methods are vacuum evaporation, arc plasma plating, ion coating, molecular beam epitaxy and sputtering coating, etc. [0...

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Problems solved by technology

Although the preparation method can provide sufficient sintering power at high temperature compared with the traditional atmospheric pressure sintering process, the prepared SiC / C ceramic composite material not only has a graphite addition of 35-50wt%, but also has a uniform microstructure, The theoretical sintered density is above 98%, and the mechanical strength is high, but it still has the disadvantages of complicated process and long production cycle

[0009] Although the above preparation methods in the prior art all adopt the hot pressing sintering process, the process flow is relatively complicated, the production cycle is long, and problems such as low product density, high water absorption rate, and low purity are also faced.

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