Method for preparing semiconductor oxide film based on metal powder
A technology of oxide film and metal powder, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of device performance ZnO film and device performance degradation, inability to prepare uniform metal oxide film, affecting performance, etc. problems, achieve excellent electron or hole transport performance, facilitate commercial production, and have good stability in use
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Embodiment 1
[0030] A method for preparing a semiconductive metal oxide film based on metal powder, the steps are as follows:
[0031] (1) Preparation of precursor solution
[0032] Specifically, the metal Zn powder is weighed and dissolved in a mixed solution consisting of 30% hydrogen peroxide, 25% ammonia water and deionized water, a small amount of it is stirred and dissolved several times, and it is fully stirred and dissolved at 500rpm at 20°C. 12h, aging for 3h to prepare the precursor solution, wherein the mass volume ratio of metal powder and deionized water is 15mg / ml, and the volume ratio of ammonia water, hydrogen peroxide and deionized water in the mixed solution is 1.04:0.06:0.2;
[0033] (2) Preparation of oxide film
[0034] Specifically, the prepared precursor solution was prepared by spin coating or spraying on the surface of the substrate to prepare a wet film, and then annealed at 200°C for 20 min; the spin coating was performed at 3000 rpm for 30 s.
[0035] The abov...
Embodiment 2
[0040] A method for preparing a semiconductive metal oxide film based on metal powder, the steps are as follows:
[0041] (1) Preparation of precursor solution
[0042] Specifically, the metal Mo powder is weighed and dissolved in a mixed solution composed of 30% hydrogen peroxide, 25% ammonia water and deionized water, and the Mo powder is stirred and dissolved in a small amount several times. The speed of 300rpm is fully stirred and dissolved for 12h, and aged for 4h to obtain a precursor solution, wherein the mass volume ratio of Mo metal powder to the mixed solution is 10 mg / ml, and the volume ratio of ammonia, hydrogen peroxide and deionized water in the mixed solution is 1.5:0.5: 0.5;
[0043] (2) Preparation of oxide film
[0044] Specifically, the prepared precursor solution was spin-coated on the surface of the substrate to prepare a wet film, and then annealed at 240°C for 60 min; the spin-coating was at 3500rpm for 60s.
[0045] The above molybdenum oxide film pr...
Embodiment 3
[0048] A method for preparing a semiconductive metal oxide film based on metal powder, the steps are as follows:
[0049] Specifically, metal Cu powder is weighed and dissolved in a mixed solution composed of hydrogen peroxide with a mass concentration of 30% and ammonia with a mass concentration of 28%, and a small amount of Cu powder is gradually added several times for stirring and dissolving, at 25°C at a rate of 600rpm Fully stir and dissolve for 12 hours, and age for 2 hours to obtain a precursor solution, in which the mass volume ratio of Cu metal powder to the mixed solution is about 1.5 mg / ml, and the volume ratio of ammonia water and hydrogen peroxide in the mixed solution is 0.5 ml:0.95 ml;
[0050] (2) Preparation of oxide film
[0051] Specifically, the prepared precursor solution was prepared by spin coating or spraying on the surface of the substrate to prepare a wet film, and then annealed at 150°C for 30 min; the spin coating was performed at 1500 rpm for 20 s...
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