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A kind of chemical mechanical polishing liquid and chemical mechanical polishing method

A chemical mechanical and polishing liquid technology, applied in the direction of polishing compositions containing abrasives, grinding machine tools, metal processing equipment, etc.

Active Publication Date: 2021-07-16
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Many oxides such as potassium perchlorate, sodium hypochlorite, sodium perborate, ammonium cerium nitrate, etc. have been investigated, but little work has been done to identify a specific oxide combined with a specific polishing operation for copper interconnect structures with cobalt barrier layers process

Method used

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  • A kind of chemical mechanical polishing liquid and chemical mechanical polishing method
  • A kind of chemical mechanical polishing liquid and chemical mechanical polishing method
  • A kind of chemical mechanical polishing liquid and chemical mechanical polishing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] Example 1. Effect of Two Different Oxidants and pH Values ​​on Polishing Removal Rates (MRRs) and Static Erosion Rates (SERs) of Cu / Co Interconnects

[0052] Polishing liquids having the following compositions were prepared for testing.

[0053] Polishing liquid (1) composition:

[0054] A) colloidal silicon dioxide (60nm in particle diameter, produced by Shanghai Xinanna Technology Co., Ltd.) 200g / L;

[0055] B) Oxidizing agent: potassium persulfate 2.7032g / L;

[0056] C) pH adjuster: potassium hydroxide 1g / L;

[0057] And add deionized water to 1000 mL.

[0058] Polishing liquid (2) is composed of:

[0059] A) colloidal silicon dioxide (60nm in particle diameter, produced by Shanghai Xinanna Technology Co., Ltd.) 200g / L;

[0060] B) Oxidizing agent: hydrogen peroxide 10mL;

[0061] C) pH adjuster: potassium hydroxide 1g / L;

[0062] And add deionized water to 1000 mL.

[0063] Polishing conditions:

[0064] Polisher-Universal 150Plus, temperature-25 degrees Ce...

Embodiment 2

[0069] Embodiment 2. The influence of two kinds of oxidizing agents on Cu / Co surface chemical composition

[0070] Solutions having the following compositions were prepared for testing.

[0071] Composition (all weight percentages are based on the entire solution):

[0072] Solution (1) consists of:

[0073] A) Oxidizing agent: potassium persulfate 2.7032g / L;

[0074] B) pH adjuster: potassium hydroxide 1g / L;

[0075] And add deionized water to 1000 mL.

[0076] Solution (2) consists of:

[0077] A) Oxidizing agent: hydrogen peroxide 10mL;

[0078] B) pH adjuster: potassium hydroxide 1g / L;

[0079] And add deionized water to 1000 mL.

[0080] condition:

[0081] Soak the copper wafer and the cobalt wafer in the corresponding solution for 1 minute respectively, take out the nitrogen gas and blow dry, and perform measurement and characterization.

[0082] The composition of Cu / Co surface films soaked in different oxidants was investigated using X-ray photoelectron spect...

Embodiment 3

[0092] Example 3. Analysis of Cu / Co surface mechanical properties under the action of two oxidizing agents

[0093] Solutions having the following compositions were prepared for testing.

[0094] Solution (1) consists of:

[0095] A) Oxidizing agent: potassium persulfate 2.7032g / L;

[0096] B) pH adjuster: potassium hydroxide 1g / L;

[0097] And add deionized water to 1000 mL.

[0098] Solution (2) consists of:

[0099] A) Oxidizing agent: hydrogen peroxide 10mL;

[0100] B) pH adjuster: potassium hydroxide 1g / L;

[0101] And add deionized water to 1000 mL.

[0102] condition:

[0103] Soak the copper wafer and the cobalt wafer in the corresponding solution for 1 minute respectively, take out the nitrogen gas and blow dry, and perform measurement and characterization.

[0104] Figure 7 It is the SEM images of Cu and Co surfaces treated by two oxidants under the condition of pH10. It can be found from the figure that the oxidant H 2 o 2 After the treatment, there are...

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Abstract

The invention discloses a chemical mechanical polishing liquid and a chemical mechanical polishing method, wherein the method comprises the following steps: a. configuring a chemical mechanical polishing liquid, wherein the chemical mechanical polishing liquid contains 1 to 10% of colloidal silicon dioxide, 1 The potassium persulfate of -20mM, the benzotriazole of 1-20mM and the water of balance and pH adjusting agent, make described polishing fluid pH be 10-11; The polishing pad spreads the polishing liquid and applies a pressure of 1-2psi to the carrier head, and performs a chemical mechanical polishing operation on the copper interconnection cobalt barrier layer structure of the substrate for 60-120s.

Description

technical field [0001] The invention belongs to the technical field of chemical mechanical polishing, and in particular relates to a chemical mechanical polishing liquid and a chemical mechanical polishing method. Background technique [0002] Integrated circuit manufacturing needs to meet high performance and function requirements by shrinking feature size, innovative assembly methods, and introducing new materials. Cobalt is considered to be one of the most promising diffusion barrier materials for copper interconnect applications. Cobalt barrier layers exhibit lower resistivity, conformal adhesion properties, ability to directly plate copper, and excellent interstitial properties compared to conventional Ta / TaN bilayers, which can cause severe copper deposition problems. The combination of cobalt and copper requires a combination of wet processes such as chemical mechanical polishing (CMP), post-cleaning, etc. Therefore, not only the copper interconnect structure needs ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02B24B37/04
CPCC09G1/02B24B37/044
Inventor 张力飞王同庆路新春
Owner TSINGHUA UNIV
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