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Monocrystalline silicon wafer containing germanium and nitrogen impurities, preparation method of monocrystalline silicon wafer, and integrated circuit comprising monocrystalline silicon wafer

A single crystal silicon wafer and integrated circuit technology, applied in the field of semiconductor materials and devices, can solve the problems of reducing COPs, non-existent, unable to control the original single crystal silicon wafer at the same time, and achieve the effect of reducing the number and size

Active Publication Date: 2020-10-02
ZHEJIANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Specifically, 1) Because the parameters and conditions controlled during the growth process are completely different, defects caused by vacancy accumulation can only be generated in silicon single crystals, and do not exist in other semiconductor single crystals; as mentioned above, silicon single crystals The crystal must be grown without dislocations and cannot absorb vacancies, so COPs defects formed by vacancy aggregation will occur; while other semiconductor single crystals contain dislocations, dislocations will absorb vacancies, making it impossible to form vacancy accumulation defects
2) Because inclusions and holes caused by inclusions can only exist in other semiconductor single crystals (such as silicon carbide, gallium arsenide, etc.), they do not exist in silicon single crystals
The following two parameters must be controlled at the same time to truly control the COPs defect: one is the number of COPs, and the other is the size of COPs
2) By doping impurities in the growth process of silicon single crystal and trying to control the formation of COPs during the growth stage, the international silicon materials academic and industrial circles formed nitrogen-doped Czochralski silicon single crystal from the late 1990s to the beginning of this century The upsurge of research and development, long-term studies have shown that reducing the number of COPs and reducing the size of COPs can not be both
However, the existing technology is unable to simultaneously control the COPs of native monocrystalline silicon wafers in terms of quantity and size, or even completely eliminate COPs. Therefore, it can only endure various disadvantages of heat treatment
[0020] For decades, people have been exploring technical solutions that can simultaneously reduce the number of COPs on the surface of native monocrystalline silicon wafers and reduce the size of COPs, or even completely eliminate the internal COPs of native monocrystalline silicon wafers, without resorting to heat treatment, or through a certain method Directly obtain a native monocrystalline silicon wafer that meets the requirements of integrated circuits and contains very few COPs or even no COPs. Many disadvantages cannot be overcome

Method used

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  • Monocrystalline silicon wafer containing germanium and nitrogen impurities, preparation method of monocrystalline silicon wafer, and integrated circuit comprising monocrystalline silicon wafer
  • Monocrystalline silicon wafer containing germanium and nitrogen impurities, preparation method of monocrystalline silicon wafer, and integrated circuit comprising monocrystalline silicon wafer
  • Monocrystalline silicon wafer containing germanium and nitrogen impurities, preparation method of monocrystalline silicon wafer, and integrated circuit comprising monocrystalline silicon wafer

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Experimental program
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Effect test

Embodiment 1

[0068] Under the same process conditions, 7 p-type silicon single crystals with a diameter of 200 mm, a crystal orientation of , a resistivity of 8-12 Ω.cm, and a boron-doped single crystal were grown by the Czochralski method, wherein: single crystal 1 is common, that is, no other impurities are intentionally doped except boron; single crystal 2 is intentionally doped with germanium impurities; single crystal 3 is intentionally doped with nitrogen impurities; single crystals 4-7 are intentionally doped with nitrogen at the same time and germanium impurities. Control the oxygen concentration to 10-11ppma.

[0069] The germanium doping method in the single crystal 2 is: according to the target concentration of germanium, a certain amount of germanium powder is added to the polysilicon raw material and melted together with the polysilicon. The nitrogen doping method in the single crystal 3 is as follows: according to the target concentration of nitrogen, a certain amount of sil...

Embodiment 2

[0095] A boron-doped p-type silicon single crystal with a diameter of 200mm, a crystal orientation of , a resistivity of 8-12 Ω.cm, and a boron-doped single crystal was grown by the Czochralski method. In addition, this silicon single crystal is doped with germanium and nitrogen impurities at the same time. After the single crystal is spheronized, the silicon wafers 8, 9 and 10 are removed at three different locations along the crystal growth direction and processed into polished silicon wafers. Due to the segregation phenomenon, the impurity concentration of each part of the silicon single crystal is different. where germanium (the effective segregation coefficient k in silicon e =0.33) and nitrogen (k e =5×10 -4 ) The concentration of impurities gradually decreases from the head to the tail of the crystal, and the oxygen (k e = 1.25) and gradually decreased.

[0096] In silicon wafer 8: germanium concentration ([Ge]) is 6970 ppma, nitrogen concentration ([N]) is 43 ppba...

Embodiment 3

[0109] Under the same process conditions, two n-type silicon single crystals with a diameter of 200 mm, a crystal orientation of , a resistivity of 8-12 Ω.cm, and a phosphorus-doped single crystal were grown by the Czochralski method. Crystal 11 is intentionally doped with germanium impurities; single crystal 12 is intentionally doped with nitrogen impurities. The doping of germanium in the single crystal 11 is achieved by adding a certain amount of germanium powder to the polysilicon raw material and melting it together with the polysilicon according to the target concentration of germanium. Nitrogen doping in the single crystal 12 is achieved by adding a certain amount of silicon nitride nanoparticles to the polysilicon raw material according to the target concentration of nitrogen, which is melted together with the polysilicon.

[0110] After the above-mentioned two single crystals are rounded, the silicon wafers are cut out at their respective same positions (ie, the dista...

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Abstract

The invention provides a primary monocrystalline silicon wafer containing germanium and nitrogen impurities. The primary monocrystalline silicon wafer comprises three impurities of germanium, nitrogenand oxygen, the germanium concentration is 2200-10000 ppma, the nitrogen concentration is 10-90 ppba, and the oxygen concentration is 10-18 ppma. Compared with the prior art, the invention provides abrand-new solution, effective control of COPs in the primary monocrystalline silicon wafer is realized for the first time, compared with a common raw silicon wafer, the raw monocrystalline silicon wafer prepared by the method has the characteristics of reduced size and reduced quantity, and even the surface and the interior of the raw monocrystalline silicon wafer prepared by the method do not contain COPs at all, so that the raw monocrystalline silicon wafer can be directly used for an integrated circuit, the defect of heat treatment is basically avoided, and the primary monocrystalline silicon wafer has important significance for manufacturing the integrated circuit.

Description

technical field [0001] The invention belongs to the field of semiconductor materials and devices, and in particular relates to a single crystal silicon wafer containing germanium and nitrogen impurities together, a preparation method thereof, and an integrated circuit comprising the silicon wafer. Background technique [0002] Monocrystalline Silicon is the most important basic material in the integrated circuit industry, and has supported the development of Moore's Law of integrated circuits for more than half a century. The metal-oxide-semiconductor (MOS) transistor is the basic unit of most integrated circuits, and its performance fundamentally determines the performance of the integrated circuit. Gate oxide integrity (GOI) has a significant impact on the leakage current and withstand voltage performance of MOS transistors. Therefore, ensuring the GOI of MOS transistors is critical to the fabrication of integrated circuits. [0003] Silicon single crystals for integrate...

Claims

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Application Information

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IPC IPC(8): C30B29/06C30B15/00C30B15/04H01L29/167
CPCC30B15/00C30B15/04C30B29/06H01L29/167
Inventor 马向阳孙玉鑫赵统兰武杨德仁
Owner ZHEJIANG UNIV