Etching solution composition for etching molybdenum/copper/molybdenum or molybdenum alloy/copper/molybdenum alloy three-layer metal wiring structure and application of etching solution composition

Abstract

The invention discloses an etching solution composition capable of etching a molybdenum / copper / molybdenum or molybdenum alloy / copper / molybdenum alloy three-layer metal wiring structure and an application of the etching solution composition. The etching solution composition comprises the following components of hydrogen peroxide, dihydric alcohol, an etching inhibitor, a chelating agent, an etchingadditive, a pH regulator and water, wherein the dihydric alcohol is one or more of ethylene glycol, propylene glycol, diethylene glycol, propane-1,2-glycol, triethylene glycol, 1,2-propylene glycol,1,3-propylene glycol, 1,4-butanediol, 1,5-pentanediol, 1,6-hexanediol, 1,7-heptanediol, 1,8-octanediol, 1,9-nonanediol, 1,10-decanediol, cyclopentane-1,2-glycol, and cyclohexane-1,4-glycol. Accordingto an etching solution, decomposition of the hydrogen peroxide is slowed down, the service life of the etching solution is prolonged to 3000 ppm to 4000 ppm, the etching solution cost in the production and manufacturing process is greatly reduced, and a safety coefficient of the etching solution is improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor metal wiring, in particular to the technical field of metal wiring etching, in particular to an etchant composition for etching a three-layer metal wiring structure of molybdenum / copper / molybdenum or molybdenum alloy / copper / molybdenum alloy and its application. Background technique [0002] The process of forming metal wiring on the semiconductor array substrate usually includes: sputtering (Sputter) film forming process, photoresist or photoresist coating and development process, wet etching process for forming metal wiring and metal wiring pattern Post-chem removal of unwanted photoresist or photoresist stripping process. [0003] For different metal wiring structures, metal wiring upper and lower layer structures, and different array substrate manufacturing processes, the requirements for etching properties of the etchant are also different. When the layer below the metal wiri...

AI Technical Summary

Problems solved by technology

However, due to the high content of hydrogen peroxide, the hydrogen peroxide in the etching solution is unstable and the concentration drops rapidly during the etching process, which leads to the inability to maintain the uniformity and stability of the etching when the concentration of copper ions in the etching solution is small, resulting in the corrosion of the etching solution. The life of the etching solution is greatly reduced (about 2000ppm, that is, when the copper ion concentration in the etching solution reaches about 2000ppm, this batch of etching solution can no longer be used, and a new etching solution needs to be replaced)