Etching solution composition for etching molybdenum/copper/molybdenum or molybdenum alloy/copper/molybdenum alloy three-layer metal wiring structure and application of etching solution composition

A technology for metal wiring and composition, applied in the field of semiconductor metal wiring, can solve the problems of shortening the service life of the etching solution, unable to maintain the uniformity and stability of etching, and decreasing the unstable concentration of hydrogen peroxide, so as to reduce the cost of the etching solution, The effect of stable properties and prolonging life

Active Publication Date: 2020-12-15
SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the high content of hydrogen peroxide, the hydrogen peroxide in the etching solution is unstable and the concentration drops rapidly during the etching process, which leads to the inability to maintain the uniformity and stability of the etching when the concentration of copper ions in the etching solut...

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] This embodiment provides an etching solution composition, its components include by weight percentage: 30wt% hydrogen peroxide, 10wt% glycol, 0.1wt% etching inhibitor, 5wt% chelating agent, 0.1wt% etching additive, 3 wt% pH adjuster and balance water.

[0050] The glycols are ethylene glycol, diethylene glycol and triethylene glycol.

[0051] The pH of the etching solution composition is maintained at 2-6.

[0052] The pH regulator is an organic base.

[0053] The etch inhibitor is a heterocyclic compound containing 1-10 carbon atoms. The heteroatom contained in the heterocyclic compound is oxygen.

[0054] The chelating agent is a compound containing an amino group and a carboxyl group; the chelating agent is iminodiacetic acid, nitrilotriacetic acid and ethylenediaminetetraacetic acid.

[0055] The etching additive is an organic acid.

Embodiment 2

[0057] This embodiment provides an etching solution composition, its components include by weight percentage: 20wt% hydrogen peroxide, 0.1wt% glycol, 5wt% etching inhibitor, 0.1wt% chelating agent, 5wt% etching additive, 0.1 wt% pH adjuster and balance water.

[0058] The dihydric alcohols are propylene glycol, propane-1,2-diol, 1,8-octanediol and cyclopentane-1,2-diol.

[0059] The pH of the etching solution composition is maintained at 3-5.

[0060] The pH regulator is an inorganic base and a basic salt.

[0061] The etch inhibitor is a heterocyclic compound containing 1-10 carbon atoms. The heteroatoms contained in the heterocyclic compound are sulfur and nitrogen.

[0062] The chelating agent is a compound containing amino and carboxyl groups. The chelating agent is diethylenetriaminepentaacetic acid, aminotrimethylenephosphonic acid and 1-hydroxyethylene-1,1-diphosphoric acid.

[0063] The etching additives are inorganic acids and phosphates. Described phosphate is ...

Embodiment 3

[0065] This embodiment provides a kind of etchant composition, and its component comprises by weight percent: 25wt% hydrogen peroxide, 5.5wt% glycol, 2.5wt% etching inhibitor, 3wt% chelating agent, 2.5wt% etching additive , 1.5wt% pH regulator and the balance of water.

[0066] The dihydric alcohols are ethylene glycol, 1,2-propanediol, 1,4-butanediol and cyclohexane-1,4-diol.

[0067] The pH of the etching solution composition is maintained at 3-6.

[0068] The pH regulator is a basic salt.

[0069] The etch inhibitor is a heterocyclic compound containing 1-10 carbon atoms. The heteroatoms contained in the heterocyclic compound are oxygen and nitrogen.

[0070] The chelating agent is a compound containing amino and carboxyl groups. The chelating agent is iminodiacetic acid, ethylenediaminetetraacetic acid and ethylenediaminetetramethylphosphoric acid.

[0071] The etching additive is phosphate. The phosphates are monoammonium phosphate, triammonium phosphate and disodiu...

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PUM

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Abstract

The invention discloses an etching solution composition capable of etching a molybdenum/copper/molybdenum or molybdenum alloy/copper/molybdenum alloy three-layer metal wiring structure and an application of the etching solution composition. The etching solution composition comprises the following components of hydrogen peroxide, dihydric alcohol, an etching inhibitor, a chelating agent, an etchingadditive, a pH regulator and water, wherein the dihydric alcohol is one or more of ethylene glycol, propylene glycol, diethylene glycol, propane-1,2-glycol, triethylene glycol, 1,2-propylene glycol,1,3-propylene glycol, 1,4-butanediol, 1,5-pentanediol, 1,6-hexanediol, 1,7-heptanediol, 1,8-octanediol, 1,9-nonanediol, 1,10-decanediol, cyclopentane-1,2-glycol, and cyclohexane-1,4-glycol. Accordingto an etching solution, decomposition of the hydrogen peroxide is slowed down, the service life of the etching solution is prolonged to 3000 ppm to 4000 ppm, the etching solution cost in the production and manufacturing process is greatly reduced, and a safety coefficient of the etching solution is improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor metal wiring, in particular to the technical field of metal wiring etching, in particular to an etchant composition for etching a three-layer metal wiring structure of molybdenum / copper / molybdenum or molybdenum alloy / copper / molybdenum alloy and its application. Background technique [0002] The process of forming metal wiring on the semiconductor array substrate usually includes: sputtering (Sputter) film forming process, photoresist or photoresist coating and development process, wet etching process for forming metal wiring and metal wiring pattern Post-chem removal of unwanted photoresist or photoresist stripping process. [0003] For different metal wiring structures, metal wiring upper and lower layer structures, and different array substrate manufacturing processes, the requirements for etching properties of the etchant are also different. When the layer below the metal wiri...

Claims

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Application Information

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IPC IPC(8): C23F1/44
CPCC23F1/44C23F1/18C23F1/26H05K3/067H05K2201/0361H05K2203/0789C23F1/14H01L21/306H01L21/32134C23F1/10H01L21/30604
Inventor 刘净
Owner SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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