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Chemical nickel-plating brightener for heterojunction solar cell and preparation method of chemical nickel-plating brightener

A solar cell and electroless nickel plating technology, which is applied in liquid chemical plating, circuits, photovoltaic power generation, etc., can solve the problems of poor brightness, corrosion resistance, poor adhesion strength and low plating speed of the nickel plating layer, and achieves The effect of improving the covering ability, speeding up the nickel plating process, and improving the corrosion resistance

Inactive Publication Date: 2021-01-22
GUANGZHOU SANFU NEW MATERIALS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The problem that this invention exists is: when being applied to heterojunction solar cell making, the plating speed of this environment-friendly electroless nickel plating brightener nickel plating is not big, and the brightness, corrosion resistance and adhesion strength of the formed nickel plating layer are average. bad

Method used

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  • Chemical nickel-plating brightener for heterojunction solar cell and preparation method of chemical nickel-plating brightener
  • Chemical nickel-plating brightener for heterojunction solar cell and preparation method of chemical nickel-plating brightener
  • Chemical nickel-plating brightener for heterojunction solar cell and preparation method of chemical nickel-plating brightener

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] The brightener for electroless nickel plating per liter of heterojunction solar cells includes the following components: 68g of pyridinium propanesulfonate, 6g of thiophene additive, 7g of propynyl alcohol ethoxy ether, 2.5g of lauryl alcohol additive, fatty alcohol polyoxyethylene Sodium ether sulfate 4g, the rest is deionized water.

[0031] Wherein, thiophene additive is made by following steps:

[0032] Add 3-thiopheneacetic acid and 6-chloro-1-hexanol into tetrahydrofuran, stir until dissolved, add dicyclohexylcarbodiimide, heat to 80°C under nitrogen protection, and then reflux for 12 hours to obtain reaction solution 1. After the reaction liquid was suction filtered, the filtrate was obtained, and the filtrate was evaporated under reduced pressure to remove the solvent to obtain the intermediate product. The ratio of 3-thiopheneacetic acid, 6-chloro-1-hexanol, tetrahydrofuran, and dicyclohexylcarbodiimide was 1mmol:1mmol : 6mL: 1.2mmol; under the protection of n...

Embodiment 2

[0041] The brightener for electroless nickel plating per liter of heterojunction solar cells includes the following components: 70g of propane sulfonate pyridinium salt, 5g of thiophene additive, 6g of propynyl alcohol ethoxy ether, 3g of lauryl alcohol additive, fatty alcohol polyoxyethylene ether Sodium sulfate 3.5g, the rest is deionized water.

[0042] Wherein, the preparation steps of thiophene additive and lauryl alcohol additive are the same as in Example 1.

[0043] The preparation method of the electroless nickel plating brightener for heterojunction solar cells comprises the following steps:

[0044] (1) Take each component by formula, add lauryl alcohol additive, fatty alcohol polyoxyethylene ether sodium sulfate to deionized water, and the weight of deionized water is the weight of lauryl alcohol additive, fatty alcohol polyoxyethylene ether sodium sulfate 5 times of the mixture, and stirred at 50°C until the mixture was evenly mixed to obtain solution 1;

[0045...

Embodiment 3

[0049] The electroless nickel plating brightener for heterojunction solar cells per liter includes the following components: 66g of pyridinium propane sulfonate, 7g of thiophene additive, 9g of propynyl alcohol ethoxy ether, 2g of lauryl alcohol additive, fatty alcohol polyoxyethylene ether Sodium sulfate 3g, the rest is deionized water.

[0050] Wherein, the preparation steps of thiophene additive and lauryl alcohol additive are the same as in Example 1.

[0051] The preparation method of the electroless nickel plating brightener for heterojunction solar cells comprises the following steps:

[0052] (1) Take each component by formula, add lauryl alcohol additive, fatty alcohol polyoxyethylene ether sodium sulfate to deionized water, and the weight of deionized water is the weight of lauryl alcohol additive, fatty alcohol polyoxyethylene ether sodium sulfate and 5 times of the mixture, and stirred at 40°C until the mixture was evenly mixed to obtain solution 1;

[0053] (2) ...

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Abstract

The invention provides a chemical nickel-plating brightener for a heterojunction solar cell. Each liter of the chemical nickel-plating brightener for the heterojunction solar cell comprises 65-70g ofpyridinium propyl sulphobetain, 5-8g of a thiophene additive, 6-9g of propynol ethoxylate, 2-3g of a laurinol additive, 3-5g of a wetting agent and the balance water. The invention further provides apreparation method of the chemical nickel-plating brightener for the heterojunction solar cell. The chemical nickel-plating brightener for the heterojunction solar cell has a relatively good using effect when being applied to manufacturing of the heterojunction solar cell.

Description

technical field [0001] The invention relates to a brightener, in particular to an electroless nickel plating brightener for heterojunction solar cells and a preparation method thereof. Background technique [0002] Heterojunction solar cells are solar cells grown on a silicon substrate with a thin layer of amorphous silicon. They have the characteristics of simple structure, low process temperature, high conversion efficiency, and good temperature characteristics. They are one of the high-efficiency cells suitable for large-scale application. , has good development prospects. The manufacturing process of heterojunction solar cells generally includes forming a passivation layer and an anti-reflective layer coating on the front side of monocrystalline silicon, coating a passivation layer on the back of monocrystalline silicon, and using mask technology to form P-type and N-type non-reflective coatings on the back of monocrystalline silicon. Crystalline silicon pattern, using ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C18/32H01L31/072
CPCC23C18/32H01L31/072Y02E10/50
Inventor 田志斌罗佑平谢飞凤陈维速
Owner GUANGZHOU SANFU NEW MATERIALS TECH