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Sea urchin-structure gallium oxide microstructure and preparation method and application thereof

A technology of microstructure and gallium oxide is applied in the field of low-cost preparation, no catalysis, high efficiency, no template of sea urchin structure gallium oxide microspheres, and rapid and simple preparation of sea urchin structure gallium oxide microspheres, achieving good repeatability and improving efficiency. Effect

Active Publication Date: 2021-03-19
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, for gallium oxide microstructures, especially β-Ga 2 o 3 The microstructure has not been reported

Method used

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  • Sea urchin-structure gallium oxide microstructure and preparation method and application thereof
  • Sea urchin-structure gallium oxide microstructure and preparation method and application thereof
  • Sea urchin-structure gallium oxide microstructure and preparation method and application thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] The preparation method of gallium oxide microstructure comprises steps as follows:

[0062] (1) Selection and processing of raw materials

[0063] a. After melting bulk raw gallium metal under anaerobic conditions in a glove box, the liquid metal was transferred from a reaction beaker to a storage container by a plastic pipette. Collection only collects liquid gallium metal from the center of the melt, leaving a gray surface oxide skin. The final liquid metal, which takes on the appearance of a silver metallic paint surface, is stored in oxygen-free airtight vials in a glove box.

[0064] b. Add 0.3 grams of zinc metal powder with a weight ratio of 3% to 10 grams of liquid metal gallium in the glove box. The metal powder is pulverized with a mortar and pestle, which promotes the alloying process and allows the alloy to be thoroughly mixed. The milling process was 20 minutes. Alloying is successfully completed when the surface of the alloy becomes clear and shiny. P...

Embodiment 2

[0075] The preparation method of gallium oxide microstructure comprises steps as follows:

[0076] (1) Selection and processing of raw materials

[0077] a. After melting bulk raw gallium metal under anaerobic conditions in a glove box, the liquid metal was transferred from a reaction beaker to a storage container by a plastic pipette. Collection only collects liquid gallium metal from the center of the melt, leaving a gray surface oxide skin. The final liquid metal, which takes on the appearance of a silver metallic paint surface, is stored in oxygen-free airtight vials in a glove box.

[0078] b. Add 0.5 g of indium metal powder with a weight ratio of 5% to 10 g of liquid metal gallium in the glove box. The metal powder is pulverized with a mortar and pestle, which promotes the alloying process and allows the alloy to be thoroughly mixed. The milling process was 20 minutes. Alloying is successfully completed when the surface of the alloy becomes clear and shiny. Pack th...

Embodiment 3

[0087] The preparation method of gallium oxide microstructure comprises steps as follows:

[0088] (1) Selection and processing of raw materials

[0089] After melting the bulk gallium feedstock metal under anaerobic conditions in a glove box, the liquid metal was transferred from the reaction beaker to a storage vessel by a plastic pipette. Collection only collects liquid gallium metal from the center of the melt, leaving a gray surface oxide skin. The final liquid metal, which takes on the appearance of a silver metallic paint surface, is stored in oxygen-free airtight vials in a glove box.

[0090] (2) Preparation process

[0091] a. Heat the gallium droplet packed in an airtight container without oxygen at 100°C to liquid state.

[0092] b. Take two silicon wafers, ultrasonically clean and dry the substrate wafers. Use a disposable dropper or pipette to take about 0.5ml of the gallium liquid drop prepared in advance, and place it in the center of a piece of substrate. ...

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Abstract

The invention relates to a sea urchin-structure gallium oxide microstructure as well as a preparation method and application thereof. The micro-morphology of the microstructure is that nanowires are uniformly distributed on the surfaces of microspheres, and the microstructure is similar to a sea urchin structure. The preparation process is carried out under the conditions of no catalyst and no template, the whole operation process is free of expensive equipment, harsh conditions and complex operation, and the preparation method is an innovative preparation method of the gallium oxide nano material. The preparation method has universality for different substrates, the repeatability of the whole operation is excellent, the preparation method can be used for subsequent heterostructure construction, and the regulation and control of an electric energy band can be realized by doping other metals in gallium. The nanowires on the surface of the sea urchin-structure gallium oxide microstructure are uniformly distributed, and the superlarge specific surface area, the directional electron transmission channel and the like of the microstructure have very important potential application valuein the fields of photocatalysis, solar blind spot detectors, battery materials, gas detectors and the like.

Description

technical field [0001] The present invention relates to a fast and simple preparation method of (doped) sea urchin-structured gallium oxide microspheres with a new shape, in particular to a template-free, non-catalyzed, high-efficiency and low-cost preparation method of (doped) sea urchin-structured gallium oxide microspheres The method belongs to the technical field of semiconductors. Background technique [0002] Nowadays, nanostructures with different morphologies have attracted widespread attention and flourished in various fields, playing an important role. Materials with ultra-wide band gaps have significant advantages and huge potential in significant application fields such as new-generation deep-ultraviolet optoelectronic devices, high-voltage and high-power power electronic devices, etc., because of their higher band gap, thermal conductivity and material stability. development potential. Gallium oxide has a super bandgap energy of 4.9 electron volts, a higher br...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J13/02B01J13/06B01J13/04
CPCB01J13/02B01J13/06B01J13/046B01J13/04
Inventor 穆文祥张洁付博贾志泰陶绪堂
Owner SHANDONG UNIV