A method for electrocatalytically synthesizing high-purity disilane

Abstract

The invention discloses a method for electrocatalytically synthesizing high-purity disilane. The process includes: taking monosilane as a raw material, and electrocatalyzing to obtain a mixture of monosilane, hydrogen, disilane and high silane; the obtained mixed gas enters a buffer tank and mixes evenly , and then compress in the compression device, and carry out gas-liquid separation, separate hydrogen, monosilane condensate reflux liquid, high silane liquid and disilane liquid, hydrogen is discharged, and monosilane condensate reflux liquid is circulated back to the buffer tank; according to each The boiling point and critical pressure of the components are different, and the obtained monosilane liquid, high silane liquid and disilane liquid are separated and purified to obtain disilane gas. The method directly synthesizes disilane by electrocatalyzing monosilane, has few by-products and high efficiency, and the purity of disilane is as high as 99.998%.

Description

technical field [0001] The invention relates to the technical field of chemical synthesis, and more specifically relates to a system for electrocatalytically synthesizing high-purity disilane. Background technique [0002] Disilane is an inorganic compound with the chemical formula Si 2 h 6 As an advanced precursor material in integrated circuits, disilane is mainly used in the key processes of semiconductor integrated circuit memory and logic chip manufacturing, such as epitaxy, photolithography, chemical vapor deposition (CVD) and atomic layer deposition (ALD). In the thin film deposition process, disilane (Si 2 h 6 , DS) Compared with other silicon source gases (such as silane and dichlorosilane, etc.), it can obtain lower deposition temperature, faster film formation rate, and higher film uniformity. It is currently used by integrated circuit chip manufacturers The more ideal silicon source gas has broad market prospects. [0003] At present, the synthesis methods o...

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Problems solved by technology

[0003] At present, the synthesis methods of disilane mainly include magnesium silicide ammonium chloride method, halodisilane reduction method and silane direct synthesis method; wherein, the magnesium silicide ammonium chloride method directly controls the temperature in the reaction device to make magnesium silicide and chloride Ammonium reacts directly to generate disilane, but this reaction has the problems of low reaction selectivity and low yield of disilane; halodisilane reduction method utilizes lithium aluminum hydride (LiAlH 4 ) or sodium aluminum hydride (NaAlH 4 ) and other reducing agents to reduce hexachlorodisilane (Si 2 Cl 6 ) to prepare disilane

This method has high disilane selectivity and high yield, but hexachlorodisilane is expensive, and the product separation is difficult, and the solvent is prone to produce a lot of pollution, and the requirements for the reaction device are relatively high; the direct synthesis of silane uses silane as a raw material Decomposition, thermal decomposition and other methods to convert it into disilane, but the reaction needs to be carried out under low silane pressure conditions, and the reaction process is difficult

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