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Reflective photomask blank and reflective photomask

A photomask and reflective technology, which is applied in the direction of optics, optical components, and originals for photomechanical processing, etc., can solve the problems of transfer performance degradation, etc., and achieve the goal of improving radiation resistance, improving resolution, and prolonging life. Effect

Pending Publication Date: 2021-06-18
TOPPAN PHOTOMASK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the EUV light incident on the EUV photomask creates a shadow of the mask pattern (absorbing layer pattern) of the EUV photomask, which may cause a problem called shadow effect that degrades the transfer performance.

Method used

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  • Reflective photomask blank and reflective photomask
  • Reflective photomask blank and reflective photomask
  • Reflective photomask blank and reflective photomask

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0098] Hereinafter, examples of the reflective photomask blank and the reflective photomask according to the present invention will be described.

no. 1 Embodiment

[0100] First, an example in which tin is contained in the absorbing layer (tin oxide film) will be described.

Embodiment 1-1

[0102] Such as Figure 10 As shown, on a substrate 11 of synthetic quartz having low thermal expansion characteristics, a multilayer reflective layer (multilayer reflective layer) in which 40 pairs of laminated films of silicon (Si) and molybdenum (Mo) are laminated is formed. layer) 12. The film thickness of the multilayer reflective layer 12 was 280 nm.

[0103] Next, on the multilayer reflective layer 12, a capping layer 13 made of ruthenium (Ru) having a film thickness of 2.5 nm was used as an intermediate layer. Thus, the reflective layer 2 having the multilayer reflective layer 12 and the capping layer 13 is formed on the substrate 11 . Tantalum and tin oxide were mixed and formed into a film on the capping layer 13 to form the absorber layer 14 having a tantalum-containing tin oxide film, thereby producing a reflective photomask blank 100 . Additionally, if Figure 10 As shown, a rear conductive layer 15 made of chromium nitride (CrN) is formed on the rear surface o...

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Abstract

Provided are a reflective photomask blank and a reflective photomask which have good irradiation resistance and which can obtain good transfer performance. In the reflective photomask blank (10), a reflective layer (2) for reflecting incident light and an absorbing layer (4) for absorbing incident light are formed in this order, on one surface of a substrate (1). The absorbing layer (4) includes, on at least the outermost surface layer thereof: a first material selected from the group consisting of tin, indium, and tellurium; and a second material comprising one or two or more materials selected from the group consisting of a transition metal, bismuth, and silicon. The content of the second material is greater than 20 atomic% and less than -50 atomic% in the same layer.

Description

technical field [0001] The invention relates to a reflective photomask blank and a reflective photomask. The present invention is a technology particularly applicable to EUV photomasks. Background technique [0002] In the manufacturing process of semiconductor devices, with the miniaturization of semiconductor devices, the requirements for miniaturization of photolithography technology also increase accordingly. In photolithography, the minimum resolution size of a transfer pattern greatly depends on the wavelength of an exposure light source, and the shorter the wavelength, the smaller the minimum resolution size. Therefore, in the manufacturing process of semiconductor devices, the exposure light source used is converted from the conventional ArF excimer laser with a wavelength of 193nm to an exposure light source in the extreme ultraviolet (Extreme UltraViolet: EUV) region with a wavelength of 13.5nm. [0003] However, almost all substances have high light absorption w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/24G03F1/54
CPCG03F1/54G03F1/24
Inventor 古沟透福上典仁渡边原太成田英辅
Owner TOPPAN PHOTOMASK CO LTD