Substrate for high-brightness LED light source and preparation method thereof

A LED light source and high-brightness technology, which is applied in the direction of chemical instruments and methods, applications, ceramic products, etc., can solve the problems of poor heat dissipation of LED substrates, low thermal conductivity, and unsuitable high-brightness LEDs, etc., to achieve heat dissipation and impurities Low content, long-lasting effect of heat dissipation

Active Publication Date: 2021-07-16
HANGZHOU ANYU TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the thermal conductivity of the LED substrate provided by the invention does not exceed 20W/m K, and the thermal conductivity is relatively low. Therefore, the heat dissipation effect of the LED subs

Method used

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  • Substrate for high-brightness LED light source and preparation method thereof
  • Substrate for high-brightness LED light source and preparation method thereof
  • Substrate for high-brightness LED light source and preparation method thereof

Examples

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Effect test

preparation example Construction

[0076] The invention provides a method for preparing a substrate for a high-brightness LED light source. Silicon carbide and the aforementioned modified silicon carbide whiskers are used to prepare a silicon carbide ceramic plate, the surface of the ceramic is coated with an epoxy resin layer containing gossypol-grafted graphene, and finally Then add an aluminum nitride heat dissipation plate on the surface of the epoxy resin layer.

[0077] The preparation method of a substrate for a high-brightness LED light source specifically includes:

[0078] 1) Silicon carbide and aluminum dihydrogen phosphate are ball-milled with water as a medium, and then ball-milled at low speed after adding modified silicon carbide whiskers. After vacuum degassing, they are injected into a mold to obtain a ceramic green body. After drying and demoulding, vacuum low-temperature sintering is performed to obtain a silicon carbide ceramic plate. ;

[0079] 2) Gossypol-grafted graphene is dispersed in ...

Embodiment 1

[0098] Example 1: A fluorosilane coupling agent oligomer:

[0099] This embodiment provides a fluorosilane coupling agent oligomer, which is prepared through the following steps: mixing equal weight of xylene and propylene glycol methyl ether as a solvent, filling with nitrogen protection, stirring at 150r / min, mixing 0.04mol KH570, 0.18mol fluorine-containing monomer CH 2 =CH-C(O)-O-CH 2 CH 2 -C 4 F 9 , The mixture of 1.31g azobisisobutyronitrile and 1.18g di-n-butyltin dilaurate was added dropwise into the mixed solvent at 110°C at a constant speed within 2h, and the mixture was kept at 120r / min and stirred for 30min, cooled to room temperature and rotated at low temperature. Evaporate to remove the solvent, and vacuum dry at 45°C to constant weight.

[0100] The molecular weight of the oligomer was determined by gel chromatography and analyzed by size exclusion chromatography, and the weight-average molecular weight of the oligomer was measured to be about 1450, and it...

Embodiment 2

[0102] Embodiment 2: a kind of fluorosilane coupling agent oligomer modified silicon carbide whisker:

[0103] This embodiment provides a fluorosilane coupling agent oligomer-modified silicon carbide whisker, which is specifically based on the fluorosilane coupling agent oligomer obtained in Example 1 to an average diameter of 300-350 nm and an aspect ratio of 30-40. The silicon carbide whiskers were modified and obtained, and the steps were as follows: 100g silicon carbide whiskers were dispersed in 12L toluene, and the ultrasonic frequency was 60KHz and the ultrasonic intensity was 0.8W / cm. 2 Disperse under conditions for 3h; add 0.8g of fluorosilane coupling agent oligomer and 0.48g of deionized water in turn, slowly heat up to 70°C at 2°C / min, stir at 180r / min for 5h, suction filtration, and alcohol washing for 3 times. Dry to constant weight at 50°C. The FTIR image of silicon carbide whiskers modified by fluorosilane coupling agent oligomer is shown in image 3 shown, ...

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Abstract

The invention relates to an LED light source substrate, in particular to a substrate for a high-brightness LED light source and a preparation method thereof. The substrate for the high-brightness LED light source is composed of a silicon carbide ceramic plate prepared from silicon carbide and modified silicon carbide whiskers; an epoxy resin layer containing gossypol grafted graphene; and an aluminum nitride heat dissipation plate. The preparation method comprises the following steps: preparing silicon carbide ceramic from silicon carbide and the modified silicon carbide whiskers, coating the surface of the ceramic with the epoxy resin layer containing gossypol grafted graphene, and finally adding the aluminum nitride heat dissipation plate on the surface of the epoxy resin layer. The substrate has excellent insulating property and heat-conducting property, the insulating property of the substrate cannot be remarkably reduced due to the addition of the grafted graphene, the heat shock resistance of the substrate for the high-brightness LED light source can be improved, the stability is high, and the substrate can be used for the high-brightness LED light source.

Description

technical field [0001] The invention relates to an LED light source substrate, in particular to a substrate for a high-brightness LED light source and a preparation method thereof. Background technique [0002] Polymerase chain reaction (PCR) is a molecular biology technique used to amplify specific DNA fragments. It can accurately replicate DNA in vitro, so its biggest feature is that it can greatly increase the trace amount of DNA. The specific principle of PCR is to use DNA to become single-stranded when denatured at a high temperature of 95 °C in vitro. When the low temperature is 60 °C, the primer and the single-strand are combined according to the principle of base complementary pairing, and then the temperature is adjusted to the optimal reaction temperature of DNA polymerase, about 72 °C. DNA polymerase synthesizes complementary strands along the direction of phosphate to five-carbon sugar (5'-3'). It can be seen that PCR has high requirements for temperature contro...

Claims

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Application Information

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IPC IPC(8): C04B35/577C04B35/81C04B35/622C04B35/626C04B38/00C04B41/85C08F216/14C08F230/08C01B32/194H01L33/64
CPCC04B35/565C04B35/622C04B35/62605C04B38/00C04B41/87C04B41/5001C08F216/14C08F230/08C01B32/194H01L33/641C08F230/085C04B2235/5276C04B2235/5445C04B2235/3217C04B2235/447C04B2235/6581C04B2235/656C04B2235/6567C04B2235/9607C04B41/4853C04B41/46C04B41/4539C04B38/0074
Inventor 章贤骏凌建鸿潘婷白文鑫
Owner HANGZHOU ANYU TECH CO LTD
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