Nano silicon material and preparation method thereof
A technology of nano-silicon and silicon materials, applied in nanotechnology, nanotechnology, chemical instruments and methods, etc., can solve problems such as harsh process conditions, difficulty in maintaining cycle performance, and difficulty in large-scale production
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[0063] Boron-doped P-type single crystal silicon material (resistivity 0.01 Ω cm) is used as workpiece electrode and tool electrode. The workpiece electrode is a cuboid with a thickness of 20mm, and the tool electrode is a square with a cross section of 5mm*5mm, and a through hole with a diameter of 2mm in the middle The working fluid is insulating deionized water (resistivity 10 MΩ·cm).
[0064] The pulse width of the discharge pulse generated by the pulse power supply is 200μs and 200ns respectively, the duty ratio is 1:4, and the rectangular pulse voltage with an open circuit voltage of 160V is applied between the workpiece electrode and the tool electrode, ionizing and breaking down the insulating working medium to form a plasma discharge Channel, the resulting high-temperature melting and gasification workpiece electrodes are condensed to obtain micron and submicron silicon materials with amorphous / nanocrystalline composite structure. After filtering with a centrifuge to ...
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