A kind of nickel-doped lead titanate single crystal thin film and its preparation and application

A single crystal thin film, lead titanate technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of difficult to grow thick films, difficult to grow nickel-doped lead titanate single crystal thin films, etc., to achieve convenient Processing, excellent photovoltaic performance, avoiding the effect of particle agglomeration

Active Publication Date: 2022-07-08
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The preparation method of the present invention is simple, the process is easy to operate, and the raw materials are simple and easy to obtain. It not only solves the problem that the nickel-doped lead titanate single crystal thin film is difficult to grow, but also effectively solves the problem that the conventional single crystal thin film preparation technology is difficult to grow thick films (especially It is a problem of high-quality thick film), which is convenient for the processing and production of devices

Method used

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  • A kind of nickel-doped lead titanate single crystal thin film and its preparation and application
  • A kind of nickel-doped lead titanate single crystal thin film and its preparation and application
  • A kind of nickel-doped lead titanate single crystal thin film and its preparation and application

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Experimental program
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Effect test

Embodiment 1

[0061] 1) take by weighing 8.59g (0.130mol) potassium hydroxide and be placed in the inner tank of the polytetrafluoroethylene reactor, add 20mL of deionized water to dissolve, fully stir, and obtain the potassium hydroxide aqueous solution that molar concentration is 6.52mol / L;

[0062] 2) 0.09g (0.31mmol) nickel nitrate hexahydrate is dissolved in 30mL ethylene glycol methyl ether, fully stirred until nickel nitrate hexahydrate is all dissolved; 0.925g (2.72mmol) tetra-n-butyl titanate is added therein again, Stir again for 2min; then add 1.242g (3.75mmol) lead nitrate to it, fully stir for 30min to completely dissolve, and obtain a mixed solution;

[0063] 3) The mixed solution prepared in step 2) was added dropwise to 120 mL of ammonia water (ammonia water was excessive), and filtered after standing for 1 h to obtain a flocculent precipitate;

[0064] 4) adding the flocculent precipitate obtained in step 3) to the potassium hydroxide aqueous solution obtained in step 1), a...

Embodiment 2

[0083] 1) Weigh 7.30g potassium hydroxide and place it in the inner tank of the polytetrafluoroethylene reactor, add 20mL of deionized water to dissolve, fully stir, and obtain the potassium hydroxide aqueous solution that molar concentration is 5.53mol / L;

[0084] 2) 0.053g (0.182mmol) nickel nitrate hexahydrate is dissolved in 30mL of ethylene glycol methyl ether, fully stirred until all nickel nitrate hexahydrate is dissolved; then add 1.987g (5.84mmol) tetra-n-butyl titanate therein, Stir again for 3min, then add 2.484g (7.50mmol) lead nitrate to it, continue stirring at room temperature for 40min to obtain a mixed solution;

[0085] 3) The mixed solution prepared in step 2) was added dropwise to 120 mL of ammonia water (ammonia water was excessive), and filtered after standing for 1 h to obtain a flocculent precipitate;

[0086] 4) adding the flocculent precipitate obtained in step 3) to the potassium hydroxide aqueous solution obtained in step 1), adjusting the volume of...

Embodiment 3

[0095] 1) Weigh 6.87g potassium hydroxide and place it in the inner liner of the polytetrafluoroethylene reactor, add 20mL of deionized water to dissolve, fully stir, and obtain the potassium hydroxide aqueous solution that the molar concentration is 5.20mol / L;

[0096] 2) 0.018g (0.062mmol) nickel nitrate hexahydrate is dissolved in 30mL of ethylene glycol methyl ether, fully stirred until nickel nitrate hexahydrate is all dissolved, and then 2.03g (5.96mmol) tetra-n-butyl titanate is added therein, Stir again for 10min, then add 2.484g (7.50mmol) lead nitrate to it, continue stirring at room temperature for 60min to obtain a mixed solution;

[0097] 3) The mixed solution prepared in step 2) was added dropwise to 120 mL of ammonia water (ammonia water was excessive), and filtered after standing for 1 h to obtain a flocculent precipitate;

[0098] 4) Add the flocculent precipitate obtained in step 3) to the potassium hydroxide aqueous solution obtained in step 1), adjust the v...

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Abstract

The invention discloses a nickel-doped lead titanate single crystal thin film and its preparation and application. The film is a nickel-doped lead titanate single crystal film with a smooth and flat surface, which has a flat interface and has a thickness of 200 nm to 3000 nm. The present invention uses tetra-n-butyl titanate, lead nitrate and nickel nitrate hexahydrate as main raw materials, uses potassium hydroxide as mineralizer, introduces a co-precipitation method, and uses niobium-doped strontium titanate as a substrate. The hydrothermal reaction was carried out at 220°C to prepare a nickel-doped lead titanate single crystal thin film. The large-area heteroepitaxial thin film with flat and smooth surface prepared by the invention has wide potential application prospects in the fields of ferroelectric memory, pyroelectric sensor, optical waveguide, light detection and electro-optic switch. The method of the invention has the advantages of simple process, easy control, low cost and easy large-scale production.

Description

technical field [0001] The invention belongs to the field of inorganic non-metallic ferroelectric materials and preparations, and particularly relates to the growth of single crystal thin films. Background technique [0002] Ferroelectric materials have a large application market due to their good ferroelectric properties, high dielectric constant and high stability. Lead titanate is a typical ferroelectric material with a tetragonal perovskite structure, its Curie temperature is as high as 490 °C, and it has good stability and large piezoelectric anisotropy. The band gap (Eg) is larger than 3eV, which has limitations in application. Doping modification is one of the effective means to improve the photovoltaic performance of materials. The introduction of dopants can directly change the energy band gap of ferroelectric oxides, thereby changing the wavelength range of light absorbed by the material, and improving the performance in the field of visible light photovoltaics. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/32C30B29/64C30B7/10
CPCC30B29/32C30B29/64C30B7/10
Inventor 任召辉陈嘉璐林宸杨倩韩高荣
Owner ZHEJIANG UNIV
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