Unlock instant, AI-driven research and patent intelligence for your innovation.

Ink, quantum dot film and quantum dot light-emitting diode

A technology of quantum dots and inks, which is applied in the fields of inks, quantum dot films, and quantum dot light-emitting diodes. Transport performance, enhancement of quantum efficiency, effects of enhancement of quantum efficiency and luminescence performance

Active Publication Date: 2021-11-02
TCL CORPORATION
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide an ink, a quantum dot film and a quantum dot light-emitting diode, aiming to solve the technical problems of poor dispersibility of the existing quantum dot ink, resulting in uneven film formation of quantum dots and low luminous efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ink, quantum dot film and quantum dot light-emitting diode
  • Ink, quantum dot film and quantum dot light-emitting diode
  • Ink, quantum dot film and quantum dot light-emitting diode

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0055] Accordingly, embodiments provide a method for producing a quantum dot film of the present invention, as figure 1 As shown, including the following steps:

[0056] S01: providing a substrate;

[0057] S02: The ink described in the embodiment of the present invention is deposited on the substrate and then dried to give the quantum dot film.

[0058] In particular, the configuration method of an ink comprising: first by a certain percentage of a functional block copolymer is dissolved in one or more organic solvent to obtain a suitable viscosity, boiling point, surface tension of the solvent; quantum dot at a predetermined ratio and then after the solvent dissolved the above obtained modified quantum dots of ink.

[0059] Specifically, the ink deposited on the substrate sheet is a method of ink-jet printing method, comprising: printing a quantum dot light emitting layer films by appropriate choice of inkjet ink jet printer. Preferably by a piezoelectric or thermal ink jet prin...

Embodiment 1

[0067] Preparation method of ink and print film formation method, including the following steps:

[0068] (1) Functional block polymer modifier: synthesis of mercapto-polystyrene-A-R

[0069] The functional monomer 9,9'-dictyl-3-vinyl fluid 5g (i.e., the final synthesized block copolymer X) 1 X 2 All is octyl), free radical initiator coupling diisoide (AIBN) 5 mg, dithiocarbenzoate (ie, the final synthetic block copolymer R is isopropyanide) 60 mg mixed In 50 ml of tetrahydrofuran, the oxygen mixed in the vacuum-liquid nitrogen decaplation is removed, and the nitrogen is charged to 50 degrees Celsius, and the polymerization is 48 hours. The reactant mixture was placed in liquid nitrogen to cool the chain transfer reaction, and then n-hexane precipitated to obtain a first-segment functionalized polymer chain monolecule RAFT reagent total 4.5 g.

[0070] The first segment functionalized polymer chain molar RAFT reagent 3g is dissolved in a 50 ml of tetrahydrofuran, dissolved in 50 m...

Embodiment 2

[0077] A quantum dot light-emitting diode comprising a laminated structure relative to an anode and a cathode, a quantum dot light-emitting layer (quantum point light emitting layer obtained by the preparation method of the above Example 1) between the anode and the cathode The electron transport layer provided between the cathode and the amount of the quantum point light-emitting layer is disposed between the anode and the vane transport layer between the amount of the quantum point light emitting layer, and the anode is disposed on the substrate. Wherein, the material of the substrate is a glass sheet, the material of the anode is the ITO substrate, the material TFB of the hole transport layer, the material of the electron transport layer is the zinc oxide material, the material of the cathode is Al.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
viscosityaaaaaaaaaa
degree of polymerizationaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of display, and particularly relates to printing ink, a quantum dot film and a quantum dot light-emitting diode. The ink comprises an organic solvent, quantum dots and a block copolymer, wherein the quantum dots and the block copolymer are dispersed in the organic solvent, and the molecular general formula of the block copolymer is sulfydryl-polystyrene-A-R; A is a block chain as shown in a formula I, and R is an aliphatic group or an aromatic group; and in the formula I, X1 is alkyl, X2 is alkyl, and y is a positive integer. The ink containing the specific block copolymer can improve the process film-forming property and luminescence property of an ink-jet printing quantum dot light-emitting semiconductor.

Description

Technical field [0001] The present invention belongs to the field of display technology, and more particularly to an ink and quantum dot film and quantum dot light emitting diode. Background technique [0002] The quantum dot (QD) luminescent material has a change in emission frequency, and the transmitted line is narrow, and the light-emitting quantum efficiency is relatively high and ultra-high light stability and solution treatment. These features make a wide range of application prospects in solid-state lighting and flat panel display in quantum dot materials as a quantum dot light-emitting diode (QLED) in the field of solid state lighting and flat panel display. [0003] The solution treatment characteristics of the quantum dot cause the quantum dot light-emitting layer to be prepared by spin coating, scraping, injection, inkjet printing. Relative to the previous methods, inkjet printing techniques can accurately deposit quantum dot light-emitting material in place in place,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09D11/30C09D11/38C09K11/02C09K11/88H01L51/50
CPCC09D11/30C09D11/38C09K11/025C09K11/883H10K50/115Y02E10/549
Inventor 李雪
Owner TCL CORPORATION
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More