Monocrystalline silicon texturing additive with strong dirt-removing power and application thereof

A technology of decontamination ability and crystalline silicon texturing, which is applied in the direction of single crystal growth, single crystal growth, sustainable manufacturing/processing, etc., and can solve problems such as increased alkali consumption, excessive adsorption, and slow texturing reaction

Pending Publication Date: 2021-11-02
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The surfactant concentration in the above texturizing additives is lower than the critical micelle concentration, so it is impossible to form solubilized micelles for the dirt, and the dirt will be deposited again, which greatly limits the decontamination ability of the texturizing additives
However, in the actual production pro

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] This embodiment provides a method for making texturing of a monocrystalline silicon wafer, comprising the following specific steps:

[0034] (1) Preparation of the first surfactant: In terms of parts by mass, weigh 4.5 parts of decyldimethylallyl ammonium chloride as the hydrophobic monomer, 3 parts of allyl polyoxyethylene ether 800 and 22.5 parts of methyl Acrylic acid is used as a hydrophilic monomer, mixed with the rest of deionized water to prepare an aqueous solution with a concentration of 30% by mass; then sodium hydroxide is added to adjust the pH value of the aqueous solution to 6~8; Five parts of potassium persulfate is used as an oxidizing agent, and five parts per ten thousand of sodium sulfite is used as a reducing agent. The above substances are stirred evenly and copolymerized for 3 hours to obtain the first surfactant.

[0035] Preparation of additives for texturing: according to the parts by mass, weigh 15 parts of the above reaction product (including...

Embodiment 2

[0040] This embodiment provides a method for making texturing of a monocrystalline silicon wafer, comprising the following specific steps:

[0041] (1) Preparation of the first surfactant: according to the mass parts, weigh 3 parts of dodecyl dimethyl allyl ammonium chloride as the hydrophobic monomer, 3 parts of allyl polyoxyethylene ether 1000 and 24 parts Acrylic acid is used as a hydrophilic monomer, mixed with the remaining amount of deionized water to prepare an aqueous solution with a mass percentage concentration of 25%; then adding sodium hydroxide to adjust the pH value of the aqueous solution to 6~8; then adding the above-mentioned monomer mass 5 / 10,000 parts of potassium persulfate was used as an oxidizing agent, and 5 / 10,000 parts of sodium sulfite was used as a reducing agent. The above substances were stirred evenly and copolymerized for 3 hours to obtain the first surfactant.

[0042] Preparation of additives for texturing: according to the parts by mass, weig...

Embodiment 3

[0047] (1) Preparation of the first surfactant: according to the mass parts, weigh 3 parts of hexadecyl dimethyl allyl ammonium chloride as the hydrophobic monomer, 3 parts of allyl polyoxyethylene ether 1200 and 24 parts Acrylic acid is used as a hydrophilic monomer, mixed with the remaining amount of deionized water to prepare an aqueous solution with a concentration of 20% by mass; then sodium hydroxide is added to adjust the pH value of the aqueous solution to 6~8; 10000 parts of potassium persulfate was used as an oxidizing agent, and 8 / 10000 parts of sodium sulfite was used as a reducing agent. The above substances were stirred evenly and copolymerized for 3 hours to obtain the first surfactant.

[0048] Preparation of texturing additives: according to the mass parts, weigh 12 parts of the above reaction product (containing 3.6 parts of active ingredients) as the first surfactant, 0.2 parts of oleic acid diethanolamide and 2 parts of sodium dodecylbenzenesulfonate As the...

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PUM

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Abstract

The invention discloses a monocrystalline silicon texturing additive with strong decontamination capability and an application thereof. The texturing additive comprises the following components in percentage by mass: 1%-6% of a first surfactant, 2%-5% of a second surfactant, 3%-5% of an ether defoaming agent, 0.5%-3% of a nucleating agent, 1%-2% of a cosolvent, 0-0.1% of a chelating agent and the balance being deionized water. The invention discloses the novel monocrystalline silicon texturing additive with strong decontamination capability, and an unconventional surfactant has a wrapping effect only when reaching a certain concentration and is not limited by the critical micelle concentration, so that the decontamination effect of the texturing additive is greatly improved, and the cleanliness of the surface of a textured silicon wafer is improved.

Description

technical field [0001] The invention relates to a monocrystalline silicon chip texturing additive, in particular to a monocrystalline silicon texturing additive with strong decontamination capability and its application. Background technique [0002] At present, the cutting process of monocrystalline silicon wafers mainly adopts the diamond wire cutting process. The mortar used for cutting usually uses silicon carbide powder as the abrasive, but the powder with silicon carbide particles smaller than 2 μm does not have cutting ability. In addition, a large amount of Micropowder such as silicon powder and iron powder is mixed into the mortar to form a film. As the cutting progresses, the content of the micropowder in the mortar will become higher and higher. When the amount of micropowder is large enough, it will adhere to the surface of the silicon wafer, making it difficult to Clean up. With the continuous development of cutting technology towards thinner lines and thinner ...

Claims

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Application Information

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IPC IPC(8): C30B33/10C30B29/06H01L31/18H01L31/0236
CPCC30B33/10C30B29/06H01L31/1804H01L31/02363Y02P70/50
Inventor 李海丁俊勇周树伟张丽娟陈培良
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
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