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Zinc oxide nano material and preparation method thereof, electron transport film and light emitting diode

A zinc oxide nanometer and electron transport technology, which is applied in the direction of zinc oxide/zinc hydroxide, nanotechnology, nanotechnology, etc., can solve the problems of poor dispersion stability of zinc oxide nanomaterials, achieve good film uniformity and increase the band gap , Improve the effect of stability performance

Pending Publication Date: 2021-12-17
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a preparation method of zinc oxide nanomaterials, aiming to solve the technical problem of poor dispersion stability of the existing zinc oxide nanomaterials preparation methods to a certain extent

Method used

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  • Zinc oxide nano material and preparation method thereof, electron transport film and light emitting diode
  • Zinc oxide nano material and preparation method thereof, electron transport film and light emitting diode
  • Zinc oxide nano material and preparation method thereof, electron transport film and light emitting diode

Examples

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preparation example Construction

[0028] as attached figure 1 As shown, the embodiment of the present invention provides a preparation method of zinc oxide nanomaterials, comprising the following steps:

[0029] S10. Obtain lithium hydroxide solution and anhydrous zinc acetate;

[0030] S20. In an anhydrous and oxygen-free environment, after mixing and dissolving the anhydrous zinc acetate and the lithium hydroxide solution, conduct a thermal reaction to separate and obtain zinc oxide nanomaterials.

[0031] The preparation method of the zinc oxide nanomaterial provided in the embodiment of the present invention uses lithium hydroxide and anhydrous zinc acetate as raw materials, and prepares the zinc oxide nanomaterial through thermal reaction in an anhydrous and oxygen-free environment. On the one hand, the embodiments of the present invention consider the adverse effects of water and oxygen on the stability of zinc oxide, and use anhydrous zinc acetate as the zinc source to synthesize in an anhydrous and ox...

Embodiment 1

[0061] A zinc oxide solution (ZnO ①), comprising preparation steps:

[0062] 1. In an argon glove box, first take 7 mmol of lithium hydroxide solid and dissolve it in 60 mL of ethanol solution, put it into a round bottom flask for 3 hours of ultrasound, heat it to 80 ° C after the end, cover the bottle and use a magnet Stirring is carried out to obtain a lithium hydroxide precursor solution.

[0063] 2. Put the weighed 7.7mmol of anhydrous zinc acetate solid into the lithium hydroxide precursor solution, keep it at 80°C and stir it with a magnet for 20 minutes.

[0064] 3. After the reaction is over, put the round bottom flask containing the mixed solution into ice water for ice bathing. After cooling down to 10°C, divide it into eight centrifuge tubes (7.5mL / tube) and add 40mL of n-heptane . Shake the mixed solution and put it in an ice bath for 30 minutes, then centrifuge at 6000rpm for 5 minutes, pour off the supernatant after centrifugation and disperse with 2.5mL / tube e...

Embodiment 2

[0080] For quantum dot light-emitting diodes, the zinc oxide solution prepared in Example 1 is stored in a refrigerator, and the device is prepared by using the same process as follows every 7 days, and the device prepared by storing the zinc oxide solution for different times is obtained, including steps:

[0081] 1. Spin-coat a layer of PEDOT:PSS:s-MoO on the ITO substrate 3 hole injection layer and annealed in air;

[0082] 2. In a nitrogen atmosphere, spin-coat a 25nm PVK hole transport layer on the hole injection layer and anneal at 140°C;

[0083] 3. Spin-coat a layer of 35nm CdSe@ZnS quantum dot luminescent layer on the hole transport layer;

[0084] 4. The zinc oxide solution prepared in Example 1 was spin-coated on the quantum dot luminescent layer on the 1st day, the 8th day, the 15th day and the 22nd day to form a ZnO electron transport layer with a thickness of 50 nm;

[0085] 5. Evaporate 100nm Ag electrode on the electron transport layer;

[0086] 6. Obtain a ...

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Abstract

The invention belongs to the technical field of light emitting diodes, and particularly relates to a preparation method of a zinc oxide nano material. The method comprises the following steps: obtaining a lithium hydroxide solution and anhydrous zinc acetate; and in a water-free and oxygen-free environment, mixing and dissolving the anhydrous zinc acetate and the lithium hydroxide solution, carrying out thermal reaction, and separating to obtain the zinc oxide nano material. According to the preparation method of the zinc oxide nano material, the lithium hydroxide and the anhydrous zinc acetate serve as raw materials, the zinc oxide nano material is prepared through the thermal reaction in the water-free and oxygen-free environment, the reaction raw materials and reaction condition parameters are reasonably regulated and controlled, so that the prepared zinc oxide nano material has the particle size of 5-7 nanometers, the particle size is small, the dispersion stability is good, and the energy gap is wide and reaches 3.7 eV.

Description

technical field [0001] The invention belongs to the technical field of light emitting diodes, and in particular relates to a zinc oxide nanometer material and a preparation method thereof, an electron transport thin film, and a quantum dot light emitting diode. Background technique [0002] Due to the remarkable confinement effect of quantum dots, quantum dots have the advantages of adjustable luminous wavelength, narrow peak width, high luminous efficiency, long life, high thermal stability and excellent solution processability. They are used in new display and lighting, Solar cells, biomarkers and other fields have broad application prospects. Quantum dot light-emitting diodes (QLEDs) prepared with more stable inorganic quantum dots as the light-emitting layer have the advantages of wide color gamut, saturated color, high color purity and low manufacturing cost, and become a new generation of new displays with great potential. After years of development and progress, the ...

Claims

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Application Information

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IPC IPC(8): H01L51/54H01L51/50C01G9/02B82Y30/00B82Y40/00
CPCC01G9/02B82Y30/00B82Y40/00C01P2004/64H10K50/16H10K2102/00
Inventor 张天朔
Owner TCL CORPORATION
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